浸泡后多孔硅的结构及光致发光特性

用电化学腐蚀方法制备了多孔硅样品,在浸泡液中浸泡使其表层多孔层与样品分离,在样品表面形成了丰富的SiO2包裹纳米硅颗粒结构,研究了样品的光致发光(PL)特性.结果表明,与剥离前相比,表层多孔层剥离后PL谱的强度约有10倍的增幅,峰位主要在蓝紫光范围内.在300℃干氧中退火后,样品的发光强度下降为退火前的三分之一,随着退火温度的升高,发光强度有所增强.退火前后有不同的发光机理,退火前光激发主要在纳米硅内,然后在二氧化硅层中的发光中心辐射复合;退火后光激发和光辐射都发生在二氧化硅层中.     

Boiling hysteresis at low temperature on enhanced tubes

The boiling hysteresis phenomenon is studied for a real scale enhanced evaporator tube (2 m long Turbo-B type) with R134a refrigerant used in the flooded evaporator of a centrifugal brine chiller for the ice-making facility. Unlike previous studies of the boiling heat transfer with uniform heat flux and uniform wall temperature, the wall temperature varies along the tube in the present experiment. To see if the similar hysteresis occurs as in the case of uniform wall temperature, a careful control of refrigerant temperature and heat flux is made. We have found hysteresis of the temperature overshoot (TOS) at the onset of nucleate boiling initially at the inlet section of the tube, before it gradually moved downstream section of the tube until the nucleate boiling occupied the whole section of the tube as the inlet temperature increased. The hysteresis became stronger at low refrigerant temperatures. The decreasing trend of heat flux after the contents of the whole tube boiled was different from the increasing trend. This paper provides a guideline how to design the evaporator in order to avoid the abnormal operation of the chillers.     

高蓄光粉体应力与光蓄性恢复研究

制备了Sr4Al1 4 O2 5:Eu2 +、Dy3+,其发光衰减符合I =ct-n规律 ,具有高蓄光特性。但研磨后 ,随粉体细化发光强度急剧衰减 ;对研磨后的粉体进行退火处理及X射线应力分析 ,结果表明 ,退火后粉体的应力减小了 5 0 .1 % ,余辉相对强度大幅度提高。     

Synthesis and Luminescence Properties of Gd_2O_3∶Eu~(3+) Phosphors

Gd2 O3∶Eu3+ isanefficientredemittinglumines centmaterial ,whichcanbeappliedindisplays[1,2 ] .TheconventionalcommercialGd2 O3∶Eu3+ ismainlysynthesizedbyhightemperaturesolid statereactionandchemicalco precipitationmethods .Anadvancedperformanceofdisplaysrequireshighqualityphospho rssuchashighbrightnessandefficiency ,monodisper sityandfinegrainsize .Muchresearchhasanticipatedthatsubmicrometer sizedandnanometerluminescentmaterialswillhavethesepotentialadvantages[3～ 8] ,sosubmicrometer sizedan…     

Simulating the Intensifying Effect of Phosphors on Imaging Plate with UV photons

It is assumed from the energy level that ultraviolet (UV) photons may have intensifying effect on BaFBr: Eu^2 .In this paper, effect of UV photons (220-290 nm) on the PSL intensity of X-ray irradiated BaFBr:Eu^2 was measured and compared to that on the PSL intensity of 220 nm photons irradiated BaFBr: Eu^2 . It was found that after the excitation of UV photons the PSL intensity of X-ray irradiated samples decreases least at 250 nm and that of 220 nm photons irradiated samples increases most at 250 nm. When the irradiation sources are X-rays and 220 nm photons the excited electrons are photoelectron and thermal-electrons, respectively, and they have different possibility of being captured by electron traps or combined with luminescent centers. And the peak at 250 nm can be explained with the model of electrons tunneling. It is assumed that the electrons excited by 250 nm have the most possibility of tunneling.     

Crystal Structure and Properties of Europium m-Chlorobenzoate Complex with 1, 10-Phenanthroline

A europium m-chlorobenzoate complex with 1,10-phenanthroline [Eu(m-ClBA)3(phen)]2 single crystal, where m-ClBA=m-chlorobenzoate and phen=1,10- phenanthroline,was prepared and structurally characterized by X-ray diffraction. It crystallizes in triclinic, space group P1- with a=1.10138(8)nm, b=1.18606(9) nm, c=1.32516(10) nm, α=112.5390(10)°, β=92.1700(10)°, γ=101.6220(10)°,C66H40N4O12Cl6Eu2, Mr=1597.64, V=1.5533(2) nm3, Z=1, Dc=1.708 g·cm-3, μ(Mo Kα)=2.325 mm-1, F(000)= 788, the final R=0.0424 and wR=0.0899 for 6856 independent reflections with Rint=0.0776.The crystal consists of binuclear molecules of the title compound. Each Eu3 ion is nine-coordinated to one 1,10-phenanthroline molecule, one bidentate carboxylate group and four bridging carboxylate groups. The carboxylate groups are bonded to the europium ion in three modes: the chelating bidentate, the bridging bidentate and bridging-chelating thridentate. Excitation and luminescence data observed at room temperature show that the title complex emits very intensive red fluorescence under ultraviolet light. The results of thermal analysis indicate that the complex ［Eu(m-ClBA)3(phen)］2 is quite stable to heat.     

Luminescence and Defect Properties of Novel Bluish-Green Phosphor β-Zn3(PO4)2∶Zr4+

Luminescence and defect properties of novel phosphor β-Zn3(PO4)2:Zr4 were systematically investigated. Corresponding to its lowest optical absorption transition at 240 nm, phosphor emits a bluish-green light at 485 nm, which yields the Stokes shift about 20000 cm-1. The unusual optical properties of Zr4 ion are ascribed to its uncommon coordination environment. In addition it shows intensive bluish-green long lasting phosphorescence(LLP) due to the existence of electron trap, which is generated by aliovalent substitution of Zr4 ion for the cation site in the matrix as shown in thermoluminescence(TL) spectrum.     

Preparation and Characteristics of Optical Storage Material CaS:Ce3+, Sm3+

CaS: Ce3+, Sm3 + optical storage material was prepared by wet-method under the reducing atmosphere. Influence of sintering atmosphere on luminescence intensity was studied to get the result that active-carbon reducing atmosphere is better. XRD analysis shows that CaS crystal structure was formed at 700 ℃. The excitation spectrum is in the range of 250 ～ 500 nm with peaks at 260.2, 353.4 and 461.2 nm, the fluorescence spectrum shows a broadband spectrum with peaks at 503, 568 and 604 nm and the emission spectrum of the sample stimulated by 980 nm laser also shows a broadband spectrum with peaks at 508,565 and 600 nm. The result of spectra analysis indicates that this material can absorb and "trap" incoming light energy from ultraviolet and visible light (Information write-in), and release that stored energy in the form of green luminescence (information read-out) upon stimulation from a longer IR wavelength. The optical storage physical mechanism was also discussed.     

Recombination luminescence in alkali metal sulfates

In this paper we present the results of investigation of the nature of intrinsic luminescence caused by photon excitation in a wide spectral range from 10.3 eV to 4 eV at a temperature of 15–300 K. It is shown that in alkali metal sulfates the main emission band formed after excitation by X-rays and photons with an energy of 9–11 eV and 4–7.5 eV at 15–300 K is located in the spectral range of 3.65–3.9 eV. When the sulfates are excited by 4–7.75 eV photons, in addition to the emission band at 3.65–3.9 eV the other effective long-wave band at 3.1–2.5 eV appears. It is assumed that the 3.65–3.9 eV radiation results from the recombination of electrons with unevenly located holes of SO₄⁻ type. The long-wave emission bands in the alkali metal sulfates may be connected with the formation of electron-hole trapping centers after irradiation by photons with energies above 4.4 eV.