In this paper, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al2O3) and hafnium oxide (HfO2) inter-poly dielectric (IPD) are studied. Interface fluorine passivation has been demonstrated in terminating dangling bonds and oxygen vacancies, reducing interfacial re-oxidation and smoothing interface roughness, and diminishing trap densities. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al2O3 and HfO2 IPDs. Moreover, fluorine incorporation will also improve the dielectric quality of the interfacial layer. Although HfO2 possesses higher dielectric constant to increase the gate coupling ratio, the results also demonstrate that fluorination of the Al2O3 dielectric is more effective to promote the IPD characteristics than fluorination of the HfO2 dielectric. For future stack-gate flash memory application, the fluorinated Al2O3 IPD undoubtedly possesses higher potential to replace current ONO IPD than the fluorinated HfO2 IPD due to superior insulating properties. 相似文献
A major challenge for back-end interconnection technology as device geometries shrink is the development of low dielectric constant materials with good gap-filling properties that are suitable for microelectronics manufacturing. Recently, there has been much interest in fluorine-doped silicon dioxides (SiOF) as such a material. The advantages of a silicon dioxide based film from an integration standpoint make these films very attractive for manufacturing.
In this study, SiOF films have been prepared in a conventional parallel-plate dual-frequency plasma-enhanced chemical vapor deposition reactor. By varying the deposition parameters, SiOF films with indices of refraction from 1.38 to 1.46 and corresponding changes of as much as 20% in the dielectric constants have been produced. Fourier transform infrared data for these films have been correlated with fluorine concentration by secondary ion mass spectroscopy measurements. The presence of fluorine can also be observed in the capacitance-voltage (CV) characteristics for the films. Fluorine interface states trap electrons which delay the onset of accumulation in the CV measurements for p-type silicon. In a similar way, the fluorine-induced trap states affect the onset of inversion for n-type silicon.
Some films with high fluorine concentrations have been observed to be unstable with respect to moisture absorption. The reliability and stability data for these films are presented. 相似文献
Interlayer dielectrics are key materials for size reduction and speed enhancement of ultra large scale integrated devices. As intralevel metal spacing is reduced and lower capacitance is required, the choices for inorganic dielectrics are limited, Fluorosilicate glass is a material that is being considered to meet these requirements because it has shown the ability to extend SiO2 chemical vapor deposition processing. Fluorine addition in a conventional glass improves gap fill while simultaneously lowering the dielectric constant. This paper will review the progress of fluorosilicate glass processing, examine the reliability of these materials, and discuss the role of fluorine in increasing gap fill and lowering the dielectric constant of standard SiO2 films. 相似文献
The etching process by very large reactive gas cluster impact was investigated by molecular dynamics (MD) simulations. Fluorine-molecule clusters with the size up to 100,000 atoms (50,000 F2 molecules) were irradiated on silicon (1 0 0) targets at supersonic velocity regime (0.1-1 eV/atom, 1.0-3.2 km/s). The MD simulations revealed that the existence of threshold energy-per-atom around 0.3 eV/atom (1.75 km/s) to cause surface deformation and enhancement of Si desorption. When the incident energy-per-atom is less than the threshold, the incident cluster breaks up itself on the target without surface deformation. The fluorine molecules in the cluster spread in the lateral direction along the target surface, and some part of them decompose and adsorbs on the target to form silicon fluoride composites. On the other hand, the clusters penetrate the surface of silicon target when the energy-per-atom is larger than 0.3 eV/atom. In these collisional processes, the target surface is deformed to create shallow crater shape. The incident fluorine molecules are preferentially concentrated at the bottom of the crater, which resulted in high desorption yield of silicon as in the form of SiF2, SiF3 and SiF4. 相似文献
A new analytical method has been developed for determining fluorine in coal. It incorporates a two stage sinter-fusion procedure using lithium carbonate, lithium tetraborate and zinc oxide. In the sinter stage, coal is ashed at 600 °C and the lithium carbonate and zinc oxide act as collectors to capture volatile species of fluorine. In the second stage, the ash residue is decomposed by fusion with the lithium carbonate and lithium tetraborate at 1050 °C. The fused material is dissolved in nitric acid and the fluoride in solution is determined using an ion selective electrode. The results for a number of coal samples including Certified Reference Materials are reported. These are in good agreement with the certified values and with the results obtained by proton induced gamma ray emission spectrometry. The good agreement confirms that no fluorine is lost during ashing/sintering of the coal and that complete dissolution of the residual ash is obtained by fusion with the lithium carbonate and lithium tetraborate The method is simpler and less labour intensive than pyrohydrolysis and is suitable for use in most commercial coal laboratories. 相似文献