Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures

AlGaN/GaN metal-oxide-semiconductor (MOS) capacitor structures using atomic layer deposited high-dielectric-constant (High-k) Al₂O₃/La₂O₃ bilayer films as dielectric have been investigated using high-frequency capacitance-voltage measurement. The stable thickness and uniform surface morphology of the bilayer films with different La/Al deposition cycle ratio (La/Al ratio) were observed after rapid thermal annealing by spectroscopic ellipsometry and atomic force microscopy, respectively. We have found that with a decrease of the La/Al ratio, the dipole layer observed by X-ray photoelectron spectroscopy at Al₂O₃/La₂O₃ interfaces is close to the surface of semiconductor and the flat band voltage shifts to the negative direction. Furthermore, the dramatic drop in dielectric constant of the films as La/Al ratio decrease was caused by the formation of La(OH)₃ in La₂O₃. Finally, the reason for the flat band voltage shifts, which is based on the dielectric constant of Al₂O₃ and La₂O₃ comprising the position of dipole layer in the dielectric films, is proposed.     

OMVPE growth of P-type GaN using solution Cp2Mg

Bis(cyclopentadienyl)magnesium (Cp₂Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these problems can be alleviated by a newly developed source-solution magnesocene, Cp₂Mg, dissolved in a solvent that is essentially nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp₂Mg. Using both sources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 10¹⁸/cm³.     

Synthesis and optoelectronic properties of novel fluorene-bridged dinuclear cyclometalated iridium (III) complex with A–D–A framework in the single-emissive-layer WOLEDs

To explore the influence of push–pull chromophores on properties of emitter in organic light-emitting devices (OLEDs), an acceptor–donor–acceptor (A–D–A)-based dinuclear iridium (III) complex of (dfppy)₄Ir₂(dipic-FL) was synthesized via Suzuki coupling reaction, in which dfppy is 2-(2,4-difluorophenyl)pyridine and dipic-FL is 2,7-di(5-pyridyl-2-carboxyl)-9,9-dioctyl-9H-fluorene. An intense emission peak at about 480 nm resulting from the (dfppy)₂Ir(pic) chromophore and a weak long-wavelength emission band at 580–660 nm attributed to intramolecular charge transfer transition were exhibited for (dfppy)₄Ir₂(dipic-FL) in dichloromethane solution. But a remarkably hypsochromic photoluminescence profile with an intense characteristical emission peak at 422 nm was observed, which is attributed to the intraligand (IL) π–π^∗ excited states in its thin film. White emission with a maximum luminance of 1040 cd/m² and current efficiency of 1.2 cd/A was obtained in its single-emissive-layer (SEL) OLEDs with a configuration of ITO/PEDOT:PSS/(dfppy)₄Ir₂(dipic-FL) (10 wt%):TCTA/TPBi/LiF/Al. To our knowledge, this is one of the best examples in term of dinuclear iridium complex as single dopant in the high-performance white-emitting SEL-OLEDs.     

Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

Variable temperature Hall effect and low temperature photoluminescence measurements have been performed on high purityp- andn-type GaAs grown at atmospheric pressure by metalorganic chemical vapor deposition. These high purity epitaxial GaAs layers were grown as a function of the arsine (AsH₃) to trimethylgallium (TMG) ratio (V/III ratio). The accurate quantitative assessment of the electronic properties of thep-type layers was emphasized. Analysis of the material focussed on the variation of the concentration of the shallow impurities for different V/III ratios. Surface and interface depletion effects are included to accurately estimate the concentration of impurities. The model of the merging of the excited states of the acceptor with the valence band is used to include the dependence the activation energy of the impurity on the acceptor concentration as well as on acceptor species identity. The characteristicp- ton-type conversion with increasing V/III ratio was observed in these samples and the reason for thep- ton-type conversion is that the background acceptor concentration of carbon decreases and the germanium donor concentration increases as the V/III ratio is increased.     

A survey of efficient MDCT implementations in MP3 audio coding standard: Retrospective and state-of-the-art

This tutorial paper describes various efficient implementations (published and new unpublished) of the forward and backward modified discrete cosine transform (MDCT) in the MPEG layer III (MP3) audio coding standard developed in the time period 1990-2010, including the efficient implementation of polyphase filter banks for completeness. The efficient MDCT implementations are discussed in the context of (fast) complete analysis/synthesis MDCT filter banks in the MP3 encoder and decoder. In general, for each efficient forward/backward MDCT block transforms implementation are presented: complete formulas or sparse matrix factorizations of the algorithm, the corresponding signal flow graph for the short audio block and the total arithmetic complexity as well as the useful comments related to improving the arithmetic complexity and a possible structural simplification of the algorithm. Finally, all efficient forward/backward MDCT implementations are compared both in terms of the arithmetic complexity and structural simplicity. It is important to note that almost all presented algorithms can be also used for the 2ⁿ-length data blocks in others MPEG audio coding standards and proprietary audio compression algorithms.     

Progress on benzimidazole-based iridium(III) complexes for application in phosphorescent OLEDs

Benzimidazole-based iridium (III) [Ir(III)] complexes as emissive phosphors in organic light-emitting diodes (OLEDs) have received extensive investigation due to their good electron mobility, excellent thermal stability and flexible modification ability. In this overview, recent advance of benzimidazole-based Ir(III) complexes have been reviewed with focus on the design strategies, photophysical properties and EL performances of phosphorescent OLEDs with various benzimidazole derivatives including substituents, functionalized ancillary ligand and dendrimers.     

MP3音频解码速度优化

MP3采用MPEG-1 LayerIII层标准压缩编码格式,压缩率很高,失真也较小,算法也较为复杂.就MP3解码过程中,针对各解码模块的特点,通过浮点转定点运算、分段拟合、查找表等方法,对解码复杂度较高的模块进行算法优化,并且在16位定点DSP芯片实现,优化后解码每帧音频格式的指令数降到最初的1/ 20.     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH₃ only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p=1 × 10¹⁹ cm⁻³. The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.     

Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

The annealing conditions and contact resistivities of Ta/Al ohmic contacts to n-type GaN are reported for the first time. The high temperature stability and mechanical integrity of Ti/Al and Ta/Al contacts have been investigated. Ta/Al (35 nm/115 nm) contacts to n-type GaN became ohmic after annealing for 3 min at 500°C or for 15 s at 600°C. A minimum contact resistivity of 5×10⁻⁶Ω cm² was measured after contacts were repatterned with an Al layer to reduce the effect of a high metal sheet resistance. Ti/Al and Ta/Al contacts encapsulated under vacuum in quartz tubes showed a significant increase in contact resistivity after aging for five days at 600°C. Cross section transmission electron microscopy micrographs and electrical measurements of aged samples indicate that the increased contact resistivity is primarily the result of degradation of the metal layers. Minimal reactions at the metal/GaN interface of aged samples were observed.