A位的Gd掺杂对La0.7-xGdxSr0.3MnO3体系磁结构的影响

研究了La0．7-xGdxSr0．3MnO3(x=0．00、0．10、0．15、0．20、0．30、0．40、0.50、0．60、0．70)体系的M-T曲线、M-H曲线和电子自旋共振谱(ESR)．实验结果表明：在Gd掺杂浓度比较低时，体系表现为长程铁磁有序；当x=0．30、0．40时，体系表现为自旋团簇玻璃态；当x≥0．50以后，体系表现为反铁磁特征．对x=0.30、0．40样品，ESR谱表明在远高于Tc温度存在相分离现象．     

La0.7-xDyxSr0.3MnO3体系的输运行为研究

研究了La位Dy掺杂对La0.7～xDyxSr0.3MnO3(x=0．00、0．10、0．15、0．20、0．30、0．40、0．50、0．60、0．70)体系输运行为的影响．实验结果表明：随Dy掺杂的增加，体系由长程铁磁有序向自旋团簇玻璃态、反铁磁状态转变．高掺杂时的输运性质在其磁背景下发生异常，在x=0．50时，发现了在ABO3结构中很少出现过的在Tc附近发生绝缘体-金属相变之后又发生从金属一绝缘体相变的现象；对x=0．60，0．70，在远离Tc的温区体系表现为绝缘体．     

金属合金巨磁阻抗三明治结构多层薄膜研究进展

介绍了金属软磁合金三明治结构多层膜巨磁阻抗效应的研究和应用现状、以及多层薄膜的制备方法和表征手段。最后介绍了磁电阻磁头和磁传感器等的应用情况和对该领域研究的展望。     

离子束混合过程中Au/Fe磁性膜的巨磁电阻效应在线研究

在离子柬混合和强磁场条件下，在线研究了Au/Fe磁性膜的巨磁电阻效应，发现了不同磁场强度下的离子柬混合对巨磁电阻效应影响的规律，以及不同注入条件对样品饱和磁场的影响。讨论了样品由磁性多层膜逐渐向磁性纳米颗粒膜的转变，以及与此相关的纳米磁性颗粒在磁场作用下的非各向同性生长，并通过高分辨透射电镜(TEM)观察证实了磁性膜样品中磁性纳米Fe颗粒存在各向异性生长现象。通过对室温放置了一年以上的磁性纳米颗粒膜样品的电磁物性测量，证明利用离子柬混合技术制备的纳米颗粒膜在室温具有良好的热稳定性和时间稳定性。     

Magnetoresistance and microstructure evolution upon rapid thermal annealing of giant magnetoresistive Co/Cu/Co/CoNbZr multilayers

The magnetoresistance (MR) variation of Co/Cu/Co/CoNbZr spin valves as a result of rapid thermal annealing has been investigated. MR ratio of 3.8% was obtained in the as-deposited sample and a considerable increase to 6.86% was observed in the 450°C×60 s treated sample. Microstructure studies show that the enhancement of MR ratio is a consequence of the nano-crystallization of amorphous CoNbZr soft layer. The nano-crystallized CoNbZr possess fine and dense microstructure and excellent electrical and soft magnetic properties which leads to the MR enhancement. With increasing annealing temperature or annealing time, interface roughness caused by rapid grain growth decrease the MR ratio rapidly. XRD studies imply that the interfusion of Cu atom into the Co layer is another possible degradation mechanism of Co/Cu/Co/CoNbZr spin valves at annealing temperature beyond 550°C.     

La0.7-xSmxSr0.3MnO3中的晶格效应

研究了La0．7-xSmxSr0.3MnO3(x=0．00，0．10，0．20，0．30)体系的红外光谱，拉曼光谱，M-T曲线，ESR曲线，ρ-T曲线和MR-T曲线。实验结果表明：随着Sm掺入量的增加，体系从长程铁磁有序向自旋团簇玻璃态、反铁磁态转变，样品的居里温度下降，金属-绝缘体相变温度逐渐降低，对应的峰值电阻渐渐增大，磁电阻迅速增加，样品物理量发生的变化可以用晶格效应来解释。     

Large Magnetic Entropy Effect in La2／3Ca1／3MnO3

The magnetocaloric effect in the colossal magnetoresistance material La2/3Ca1/3MnO3 was studied. From the measurements of temperature dependence of magnetization in various magnetic fields, the large magnetic entropy change associated with the ferromagnetic-paramagnetie transition was discovered. This result suggests that perovskite manganites are suitable candidates as working substance in magnetie refrigeration technology.     

Research of Colossal Magnetoresistance in La0.67Ca0.33Mn1-xCrxO3 (0.00≤x≤0.15)

The extraordinary colossal magnetoresistance (CMR) behavior in was found that the substitution with Cr on Mn sites introduces an additional bump in zero-field resistivity. With increasing Cr content, this additional bump grows up drastically while the original resistivity peak associated with magnetic order transition diminishes gradually. Under the applied magnetic field, both bumps of resistivity are deeply compressed, which leads to the appearance of two peaks in CMR response. As a result, the temperature range of CMR response is significantly broadened, spanned from the lowest to near room temperature. These results suggest that Mn-site element substitution could be a potent way of tuning CMR response.     

基片对间接耦合式超磁致伸缩薄膜静态磁化性能的影响

间接耦合式超磁致伸缩薄膜是一种新兴的具有优异机械物理性能的功能材料，已成为微型器件材料研究的热点之一。由于是在弹性基片上通过物理沉积方法得到该种薄膜材料，因此基片的物理性能对薄膜材料的磁化性能会产生重要影响。通过对物理性能差异较大的铜、聚酰亚胺两种基片的间接耦合式超磁致伸缩薄膜的磁化曲线、饱和磁化强度等进行实验研究与分析比较，得到不同物理性能基片对超磁致伸缩薄膜特性的影响规律，为进一步制备性能各异的薄膜材料奠定基础。     

Spin valve effect in sputtered FL-MoS2 and ferromagnetic shape memory alloy based magnetic tunnel junction

In the last decade, two-dimensional (2D) transition metal dichalcogenides have been introduced with great significance in the spintronic devices for their extraordinary electrical, optical, and spin-dependent properties. In this work, we have fabricated a few-layer molybdenum disulfide (FL-MoS₂) (~6 nm) as a non-magnetic spacer layer in Ni–Mn–In/FL-MoS₂/Ni–Mn–In magnetic tunnel junction (MTJ) using DC magnetron sputtering. FL-MoS₂ thin film sandwiched between two ferromagnetic shape memory alloy based electrodes exhibit semiconducting behavior, confirmed by current-voltage (I–V) characteristics and temperature dependent resistance measurement. The fabricated MTJ shows spin valve effect in the presence of an external magnetic field. The tunneling magnetoresistance (TMR) has been recorded in 10 K–300 K temperature range. The highest TMR ratio of 0.51% was obtained at a low temperature ~10 K, corresponding to the spin polarization of ~5%. This TMR ratio reduces to a value of 0.032% as the temperature of the device increases up to 300 K, displaying a finite TMR at room temperature. A detailed study of thickness and temperature-dependent magnetization versus magnetic field (M ? H) hysteresis loops of Ni–Mn–In thin films has been performed to understand the complex TMR behavior. The present study paves the way for the use of sputtered FL-MoS₂ and ferromagnetic shape memory alloy in ultrafast spintronics for advanced magnetic devices application.