延迟焦化装置干气脱硫系统技术改造

分析延迟焦化装置干气脱硫系统净化干气中烯烃、硫含量达不到设计值的原因,通过调整柴油吸收及换热系统工艺流程、改造脱硫塔内件、溶剂再生塔和换用新型溶剂,使净化干气的各项指标达到制氢原料的要求,取得好的经济效益。     

金属氚化物中3He的热解吸方法

在自行设计的全金属高真空热解吸系统上,以ELITE SPE-50型四极质谱计(QMS)为分析器,建立了金属氚化物中3He的热解吸和数据处理方法.解吸过程中,金属系统处于真空密闭状态,薄膜压力计直接测量解吸出的气体压力,质谱计则通过微量渗漏阀在线取样测量,所采集的数据均为积分形式.研究结果表明四极质谱计标定解吸系统内4He的分压＜350 Pa时,其相关系数R＞0.99,且记忆效应的贡献极弱;离子态氚T+对m/e=3组分分压的贡献可按IT+≈0.01 IT2+确定,不干扰3He的测定;将气体解吸所得的积分数据经平滑并微分处理后可准确得到气体释放速率与退火温度的关系,即热解吸谱.     

Spin effects in the screening and Auger neutralization of He ions in a spin-polarized electron gas

The screening of a He⁺ ion embedded in a free electron gas is studied for different spin-polarizations of the medium. Density functional theory and the local spin density approximation are used to calculate the induced electronic density for each spin orientation, i.e. parallel or antiparallel to the spin of the electron bound to the ion. Since both the He⁺ ion and the electron gas are spin-polarized, we analyze in detail the spin state of the screening cloud for the two different possibilities: the spin of the bound electron can be parallel to either the mayority spin or the minority spin in the medium. Finally, the spin-dependent Kohn–Sham orbitals are used to calculate the Auger neutralization rate of the He⁺ ion. The polarization of the Auger excited electron is influenced by the spin-polarization of the medium. The results are discussed in terms of the spin-dependent screening and the indistinguishability of electrons with the same spin state.     

核动力堆安全壳内外中子能谱和剂量测量

利用自制的多球谱仪测量了某核动力反应堆安全壳内外的中子能谱和剂量当量率。对安全壳外测量，中心探测器为球形^3He正比计数管；对安全壳内测量，中心探测器为球形金箔。系统的响应函数用MCNP程序计算，解谱程序为MIEKEB。为验证系统响应函数计算的准确性，进行了一些实验测量，并与理论计算结果进行了比较。结果表明，测量结果与计算结果在不确定度范围内相吻合。     

甜味糯米籺保鲜工艺研究

以糯米粉、粳米粉、黄糖等为主要原料,经模具成型、蒸煮、冷却、真空包装、杀菌等工序生产甜味糯米籺,分析蒸煮时间、冷却时间、杀菌温度与杀菌时间对甜味糯米籺保鲜效果及感官品质的影响。得出最佳工艺:蒸煮时间为1.5 h,冷却时间为20 min,杀菌温度为121℃,杀菌时间为15min。检测得甜味糯米籺真空包装冷藏(5~8℃)120 d,菌落总数为1 300 cfu/g,大肠菌群数为3MPN/g;真空包装冻藏(低于-12℃)180 d,菌落总数1 200 cfu/g,大肠菌群3 MPN/g;致病菌均未检出。糯米籺外观色泽较好,试吃后口感、风味仍优。甜味糯米籺在真空包装下冷藏(5~8℃)可储藏120 d,冻藏(低于-12℃)可储藏180 d。     

低能高通量氦离子辐照下W28Ta28V28Zr8Sc8高熵合金损伤行为研究

采用放电等离子烧结技术制备了W₂₈Ta₂₈V₂₈Zr₈Sc₈高熵合金,研究了高熵合金在低能量、高通量氦离子辐照下的损伤行为。结果表明,在相同He离子辐照参数下,高熵合金表现出比纯W更优异的抗辐照损伤性能。不同He离子能量条件下,高熵合金中出现严重Fuzz结构时的He离子能量阈值远高于纯W。在相同辐照参数下,高熵合金有着明显小于纯W的Fuzz层厚度。W₂₈Ta₂₈V₂₈Zr₈Sc₈高熵合金中不同相区在辐照后表现出不同的表面形貌特点,这与构成相区主要元素的He离子辐照行为有关。通过设计高熵合金的显微组织,可以获得优良的抗辐照材料。     

Formation of cavities in GaAs and InGaAs

The ion implantation of He is examined as a means to form thermally stable cavities in GaAs. Room-temperature implantation of 2–10 × 10¹⁶ He/cm² at 40 or 50 keV forms bubbles, but subsequent annealing at 250°C or above leads to exfoliation of the implanted surface layer. The exfoliation appears related to the agglomeration of bubbles on dislocations at the back of the layer; evidence suggests these may be misfit dislocations formed to relieve compressive stress in the implanted layer. Implantation of He at 150°C produces similar results, whereas the He diffuses out of GaAs without forming cavities during implantation at 300°C. However, implantations of immobile Ar followed by He at 400°C produce extended defects with bubbles in the implanted layer; the He can be degassed by subsequent annealing at 400°C to produce 1.5–3.5 nm cavities that are stable at this temperature. The same treatment applied to an In_0.10Ga_0.90As/GaAs heterostructure produces larger cavities preferentially located on dislocations at the interface, with only slight reduction in strain of the epitaxial layer. The microstructures of both GaAs and the heterostructure clearly demonstrate an attractive interaction between bubbles or cavities and dislocations.     

用正电子湮没方法研究氦离子等离子体辅助分子束外延InP(InGaAsP)/InP结构

用氦离子等离子体辅助分子束外延方法生长了ＩｎＰ（ＩｎＧａＡｓＰ）／ＩｎＰ结构。结果发现,ＰＡＢＭＥ外延层具有很高的电阻率和很快的光反应特征。用慢正电子湮没方法研究了这一外延层。测量结果说明这些特性与等离子体造成的缺陷及缺陷随温度变化有直接关系。     

高纯3He提取方法研究与比较

报道了采用700 ℃铀床、77 K低温活性炭柱提取高纯3He,之后采用氢同位素稀释法除去3He中微量氚的研究结果.700 ℃流通式铀床和77K低温活性炭柱吸附方法,能快速除去3He中杂质组分,得到纯度大于99.99%的高纯3He;氢同位素稀释法能够将3He中3H摩尔分数降到低于3.5×10-10%.与其他方法比较,氢同位素稀释法工艺过程更加简单,3He收率更高.