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胜利油气区位于渤海湾伸展盆地的济阳坳争和昌潍坳陷的潍北凹陷，是我国东部无机成因非烃类气的富集区，目前已发现二氧化碳气藏个，探明气储量一百余亿立方米，揭示该区具勘探非烃类气藏的较大前景。为进一步寻找非烃类气藏，对该区二氧化碳气藏的成藏条件和分布规律进行了研究。     

Study of the damage produced in 6H-SiC by He irradiation

Lattice damage and evolution in 6H-SiC under He⁺ ion irradiation have been investigated by the combination of Rutherford backscattering in channeling geometry (RBS/C), Raman spectroscopy, UV–visible spectroscopy and transmission electron microscopy (TEM). 6H-SiC wafers were irradiated with He ions at a fluence of 3 × 10¹⁶ He⁺cm⁻² at 600 K. Post-irradiation, the samples were annealed in vacuum at different temperatures from 873 K to 1473 K for isochronal annealing (30 min). Thermally annealed He irradiated 6H-SiC exhibited an increase in damage or reverse annealing behavior in the damage peak region. The reverse annealing effect was found due to the nucleation and growth of He bubbles. This finding was consistent with the TEM observation. The thermal annealing brought some recovery of lattice defects and therefore the intensities of Raman peaks increased and the absorption coefficient decreased with increasing annealing temperature. The intensity of Raman peak at 789 cm⁻¹ as a function of annealing temperature was fitted in terms of a thermally activated process which yielded activation energy of 0.172 ± 0.003 eV.     

Characteristics of hydrogenated silicon thin film deposited by RF-PECVD using He-SiH4 mixture

Nanocrystalline silicon thin films (nc-Si:H) were deposited using He as the dilution gas instead of H₂ and the effect of the operating pressure and rf power on their characteristics was investigated. Especially, operating pressures higher than 4 Torr and a low SiH₄ containing gas mixture, that is, SiH₄(3 sccm)/He(500 sccm) were used to induce high pressure depletion (HPD) conditions. Increasing the operating pressure decreased the deposition rate, however at pressures higher than 6 Torr, crystallized silicon thin films could be obtained at an rf power of 100 W. The deposition of highly crystallized nc-Si:H thin film was related to the HPD conditions, where the damage is decreased through the decrease in the bombardment energy at the high pressure and the crystallization of the deposited silicon thin film is increased through the increased hydrogen content in the plasma caused by the depletion of SiH₄. When the rf power was set at a fixed operating pressure of 6 Torr, HPD conditions were obtained in the rf power range from 80 to 100 W, which was high enough to dissociate SiH₄ fully, but meantime low enough not to damage the surface by ion bombardment. At 6 Torr of operating pressure and 100 W of rf power, the nc-Si:H having the crystallization volume fraction of 67% could be obtained with the deposition rate of 0.28 nm/s.     

浅谈“六法论”

南齐谢赫的“六法论”是对中国画审美理想与审美标准的高度概括和总结,深入探讨“六法论”,可以提高我们对中国画的认识与理解。     

活性炭纤维的氧化还原特性及其应用前景

六十年代以来，活性炭纤维由于其优异的吸附性能而引起了科学家们的重视。近年来，人们发现活性炭纤维不仅吸附性能优异，而且还原能力良好，因此，它能够吸附大量高电位的离子，并继之将其还原成为单质金属或低氧化态离子。这种吸附－还原性能在贵重金属的富集、回收和分离，以及有害气体或溶液的处理等领域有良好的应用前景     

国产随钻测量仪在小眼短半径水平井中的应用

详细分析了使用国产随钻测量仪（ＹＳＴ）代替进口随钻测量仪进行小眼短半径水平井测量施工的可行性，并介绍了ＹＳＴ在河９０－平１井中的测量施工方法及效果。现场应用表明，该测量方法经济效益非常显著，具有推广应用价值。     

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利用天然气中He同位素组成探讨天然气的形成与运聚成藏机制。塔里木盆地古生代和中生代地层中天然气氦同位素分析表明，3He/ 4He分布在2.58×10-8～8.33×10-8范围，R/Ra为0.019～0.059，平均值为0.031，为典型的壳源He同位素组成特征。我国东部主要含油气盆地天然气的R/Ra平均比值则变化于1.21～2.30，说明在东部盆地天然气形成过程中有幔源He的加入。导致这种差异的原因除构造活动外，更重要的是成烃过程中热源不同。东部含油气盆地成烃作用过程中，携带有深部气体挥发分的幔源热流加热地层水形成地层中热水对流体系，同时幔源He进入热水流体。热水流体与烃源岩发生作用，可促使源岩中有机质转化成烃类并进入流体，烃源岩中壳源放射性成因He 也进入流体一起运移成藏，所以东部盆地天然气中的He同位素组成具有壳幔二元混合特征。塔里木盆地成烃热源来自于盆地沉积体埋深形成的壳内地热增温，天然气He同位素组成特征表现为壳源He同位素特征。     

氘基体中痕量氦的质谱在线分析

研制了在线检测氘基体中痕量氦的分析装置,包括气体进样部分、锆铝泵氘氦分离系统和四极质谱仪。研究结果表明,在线分析方法的氦-4检出限可达4×10~8个原子。     

A practical vapor pressure equation for helium-3 from 0.01 K to the critical point

A saturation vapor pressure equation, p(T), is an essential component in the ³He state equation currently under development. The state equation is valid over the range 0.01-20 K with pressures from 0 to the melting pressure or 15 MPa. The vapor pressure equation consequently must be valid from 0.01 K to the critical temperature. This paper surveys available ³He critical temperature and pressure measurements, leading to new recommended critical values of 3.3157 K and 114603.91 Pa. The ITS-90 temperature scale is defined by the ³He vapor pressure from 0.65 to 3.2 K. A new vapor pressure equation is developed for the interval from the upper end of the T₉₀ scale to this newly defined critical point, employing a mathematical form in which the second derivative d²p/dT² diverges in agreement with scaling laws at the critical point. Below 0.65 K, an empirical vapor pressure expression is adopted, consistent with a theoretical expression valid in the limit T → 0. These two new components are fitted to be piecewise continuous with the EPT-76 p(T) scale rather than the ITS-90 T(p) scale between 0.65 and 3.2 K. Probable deviations between this vapor pressure scale and PLTS-2000 melting pressure-temperature scale are recognized, but not reconciled.     

Cl/Cl2/He+HN3/He反应体系的实验研究

本文对微波解离C12产生CI，与HN3／He的混合气体反应产生的激发态粒子NCI(a1△)和NCl(b1∑)进行了实验研究．对NCl(a1△)和NCl(b1∑)的荧光光谱进行了测量并对光谱强度沿气流方向的变化趋势以及依赖几种不同气体流量和配比的变化关系进行了研究．给出了NCl(a1△)和NCl(b1∑)产生的最佳实验参数及配比关系，并对结果做了讨论．