Enhanced hydrogen generation from methanol aqueous solutions over Pt/MoO3/TiO2 under ultraviolet light

The photocatalytic activity in hydrogen production from methanol reforming can be significantly enhanced by Pt/MoO₃/TiO₂ photocatalysts. Compared with Pt/P25, the photocatalytic activity of optimized Pt/MoO₃/TiO₂ shows an evolution rate of 169 μmol/h/g of hydrogen, which is almost two times higher than that of Pt/P25. XRD and Raman spectra show that MoO₃ are formed on the surface of TiO₂. It is found that with the bulk MoO₃ just formed, the catalyst shows the highest activity due to a large amount of heterojunctions and the high crystallinity of MoO₃. The HRTEM image showed a close contact between MoO₃ and TiO₂. It is proposed that the Z-scheme type of heterojunction between MoO₃ and TiO₂ is responsible for the improved photocatalytic activity. The heterojunction structure of MoO₃/TiO₂ does not only promote the charge separation, but also separates the reaction sites, where the oxidation (mainly on MoO₃) and reduction (on TiO₂) reactions occurred.     

NiS2 Co-catalyst decoration on CdLa2S4 nanocrystals for efficient photocatalytic hydrogen generation under visible light irradiation

NiS₂ nanoparticles as noble metal-free co-catalysts were deposited onto the CdLa₂S₄ nanocrystals through a hydrothermal process. The loading of NiS₂ co-catalyst resulted in remarkable enhancement for H₂ production over the CdLa₂S₄ photocatalyst under visible light irradiation. The optimal hybrid photocatalyst with 2 wt% NiS₂ loading exhibited a H₂ production rate of 2.5 mmol h⁻¹ g⁻¹, which was more than 3 times higher than that of the pristine CdLa₂S₄ photocatalyst. The promoted photocatalytic H₂ production by NiS₂-loading is attributed to the enhanced separation of photogenerated electrons and holes as well as the activation effect of NiS₂ for H₂ evolution.     

Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD

A double-side (bifacial) heterojunction (HJ) Si solar cell was fabricated using hot-wire chemical vapor deposition. The properties of n-type, intrinsic and p-type Si films were investigated. In these devices, the doped microcrystalline Si layers (n-type Si for emitter and p-type Si for back contact) are combined with and without a thin intrinsic amorphous Si buffer layer. The maximum temperature during the whole fabrication process was kept below 150 °C. The influence of hydrogen pre-treatment and n-Si emitter thickness on performance of solar cells have been studied. The best bifacial Si HJ solar cell (1 cm² sample) with an intrinsic layer yielded an active area conversion efficiency of 16.4% with an open circuit voltage of 0.645 V, short circuit current of 34.8 mA/cm² and fill factor of 0.73.     

Modeling of charge transport across disordered organic heterojunctions

Organic electronic devices often consist of a sandwich structure containing several layers of disordered organic semiconductors. In the modeling of such devices it is essential that the charge transport across the organic heterojunctions is properly described. The presence of energetic disorder and of strong gradients in both the charge density and the electric field at the heterojunction complicates the use of continuum drift-diffusion approaches to calculate the electrical current, because of the discrete positions of the sites involved in the hopping transport of charges. We use the results of three-dimensional Monte Carlo simulations to construct boundary conditions in a one-dimensional continuum drift-diffusion approach that accurately describe the charge transport across the junction. The important effects of both short- and long-range Coulomb interactions at the junction are fully accounted for. The developed approach is expected to have a general validity.     

Semiconducting polymer-incorporated nanocrystalline TiO2 particles for photovoltaic applications

In this work, we study hybrid solar cells based on blends of the semiconducting polymer poly(3-octylthiophene-2,5-diyl)(P3OT) and [6,6]-phenyl C₆₁ butyric acid methyl (PCBM) coated titanium dioxide (TiO₂) nanocrystal film. The Fourier transform infrared spectra (FTIR), UV–vis absorption spectra and PL quenching researches show that the films had a stronger absorption in visible light range. The influence of the PCBM:P3OT ratio were researched and the optimized ratio of PCBM to P3OT (1:1.5) exhibit a short circuit current of 4.42 mA cm⁻², an open circuit voltage of 0.81 V, a fill factor of 0.73 and a light-to-electric conversion efficiency of 2.61% under a simulated solar light irradiation of 100 mW cm⁻².     

Microwave hydrothermal synthesis and photocatalytic properties of TiO2/BiVO4 composite photocatalysts

TiO₂/BiVO₄ composite photocatalysts with heterojunction structures were synthesized by the one-step microwave hydrothermal method. The physical and photophysical properties of the as-prepared photocatalysts were fully characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), UV–vis diffuse reflectance spectra, photoluminescence (PL) and BET surface area analysis. The photocatalytic activities were evaluated by the decolorization of rhodamine B under UV and simulated sun-light irradiation. The results reveal that the as-prepared TiO₂/BiVO₄ composites exhibit higher photocatalytic activities than pure BiVO₄. The 20% TiO₂/BiVO₄ sample shows the best photocatalytic activity. The enhancement of photocatalytic activity is mainly attributed to the increasing separation rate of photogenerated charge carriers. The possible photocatalytic mechanism is discussed on the basis of the calculated energy band positions.     

Investigation of thermal effects on the single-finger heterojunction bipolar transistors

We will first derive a physics-based, analytical single-finger heterojunction bipolar transistor (HBT) model which takes into account the thermal effect. Next, the model is used to calculate the three figures of merit of HBT, i.e., current gain, cut-off frequency and maximum frequency. Their variation against the collector current density under the influence of thermal effect is presented and the calculation results are discussed.     

Effect of hydrogen dilution on intrinsic a-Si:H layer between emitter and Si wafer in silicon heterojunction solar cell

In silicon heterojunction solar cells, a thin intrinsic amorphous-silicon (a-Si:H) buffer layer between a doped emitter and a c-Si wafer is essential to minimize carrier recombination. This study examines the effect of H₂ dilution on the properties of the intrinsic a-Si:H layers deposited on Si wafers by plasma-enhanced chemical vapor deposition. A H₂/SiH₄ ratio of 24 led to improvements in the quality of intrinsic a-Si:H films and in the performance of passivation compared to a-Si:H film without H₂ dilution. A high H₂-dilution ratio, however, degraded the passivation of the a-Si:H film. The Si heterojunction solar cells with an optimal intrinsic a-Si:H layer showed an efficiency of 12.3%.     

Modeling of SiGe-base heterojunction bipolar transistor with gaussian doping distribution

The results of numerical modeling of the base transit time and collector current of SiGe-base heterojunction bipolar transistors with a Gaussian base doping profile and two Ge profiles (linearly graded and box) are presented for the first time. The importance of including the dependence of minority carrier mobility on the drift field and the dependence of the effective density of states on the Ge concentration along the base is demonstrated through the analysis of base transit time and collector current. A function describing the decrease of the density of states product in strained SiGe layers with increasing Ge concentration is proposed.     

CuO-ZnO异质结半导体陶瓷气敏机理的研究

ＣｕＯ－ＺｎＯ异质结气敏传感器是一种新型的气敏传感器,它有成本低,工艺简单、检测方便等众多优点,本工作主要研究了ＣｕＯ和ＺｎＯ不同比例情况下,该传感器的气敏性能。测试了它的阻温特性及在不同温度,不同气氛条件下器件的灵敏度,并从理论上对测试结果及敏感机理进行了分析和讨论。