四方变频器在注塑机上的应用

本文介绍了四方V360系列变频器在注望机上的成功应用。     

A low-power differential injection-locked frequency divider with output power flatness in 0.5 μm E/D-mode GaAs PHEMT

This study implemented an injection-locked frequency divider (ILFD) on Ka-band millimeter-wave communication systems in 0.5 μm enhancement/depletion-mode (E/D-mode) GaAs PHEMT technology. The ILFD presents a low-power design based on the differential-injection circuit topology without using any injectors. Compared with the conventional single-injection ILFD circuits, the proposed ILFD exhibits output power flatness and wide locking range characteristics with a power consumption of 0.9 mW under a 0.4 V supply. The self-oscillation frequency was chosen to be 20 GHz for divided-by-2 operation. The measured locking range is approximately 11.5 GHz ranging from 32.5 GHz to 44 GHz when the injection power level is 5 dBm. The locking range exhibiting a 3 dB power roll-off characteristic at output is 10.5 GHz ranging from 33 GHz to 42.5 GHz.     

用OTCS方法测量InP：Fe中的深能级

用光激瞬态电流谱（ＯＴＣＳ）方法测量半绝缘ＩｎＰ：Ｆｅ的深能级，研究了光强对ＯＴＣＳ测试的影响，在低温下，用强光滑蜊测得ＩｎＰ：Ｆｅ中存在ＥＴ＝０．３４ｅＶ的电子陷阱和ＥＴ＝１．１３ｅＶ的空穴陷阱，光强增大，ＥＴ＝０．３４ｅＶ的电子陷阱的ＯＴＣＳ峰的位置向高温方向移动，不同的光强下测得的ＥＴ也不同。文章从光的强度影响深能级的填充率对ＥＴ进行了理论修正。实验上发现修正后误差大大减小了。     

大口径改型卡氏天线栅状反射面成型工艺研究

主要论述了大口径曲面栅状反射面的结构特点、反射面上高精度线条的制作及其关键制造技术，通过合理的模具设计，运用湿法成型和真空袋压相结合的工艺，成功研制了形面精度高、电气指标一致性好的天线反射体。     

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions

This work investigates for the first time, the physics of carrier transport in a sub-90 nm strained silicon-on-insulator (SOI) n-MOSFET with silicon–carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering r_sat and source injection velocity υ_inj were observed, accounting for the large drive current I_Dsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in r_sat is related to a shorter critical length ℓ₀ for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υ_inj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed.     

Relation between injection barrier and contact resistance in top-contact organic thin-film transistors

We theoretically investigate the carrier injection into top-contact bottom-gate organic thin film transistors. By means of a two-dimensional drift–diffusion model, we explicitly consider thermionic and tunneling injection in combination with subsequent carrier transport into the device. Based on numerical simulations with this model, we determine the contact resistance as a function of the nominal hole injection barrier height and temperature. Depending on the barrier height or the operating temperature, we find three distinct injection regimes. Our work reveals that in all three regimes self-regulating processes exist due to which the influx of current is adjusted according to the needs of the channel at the given point of operation.     

半导体封装中的可视化技术

树脂传递模封装是广泛使用的可靠性量产性均好的半导体封装方法。但随着封装体（PACKAGE）尺寸的日益薄型化和多腿化,不可避免地会发生与树脂在模腔中流动状态有关的空隙等使制品失效的不良模式。这样,通过观察树脂流动状态及对空隙的分布进行研究,对于研究空隙发生机理从而抑制空隙发生具有重要意义。本文将着重介绍两种新的研究实验方法：（1）应用玻璃嵌入式新型可视化模具观察树脂在模腔中的流动状态;（2）采用超声波探查图像装置（简称SAT）进行树脂封装体内部的观察。     

高压喷射灌浆技术简介

高压喷射灌浆（下简称高喷）技术，虽是一项新技术，有些问题还有待进一步完善，但其发展势头之迅，足以说明它所具有的功能、优点，有很强的推广价值，引黄工程大梁水库坝基防渗墙就是一例。本文介绍了高喷技术原理、分类、适用范围、设备、工序以及主要参数确定等     

浅谈IC封装材料对产品分层的影响及改善

IC封装不仅要求封装材料具有优良的导电性能、导热性能以及机械性能,还要求具有高可靠性、低成本和环保性,这也是引线框架、环氧树脂成为现代电子封装主流材料的主要原因,其市场份额约占整个封装材料市场的95%以上。由于环氧树脂封装是非气密性封装,对外界环境的耐受能力较差,尤其是受到湿气侵入时,产品会出现一些可靠性问题,最容易发生的现象是分层。简要分析了框架和环氧树脂对产品可靠性的影响,在此基础上提出一些改善措施。