过渡金属对Au-Pd/TiO_2-Al_2O_3催化剂加氢脱硫性能的影响

研究了掺杂过渡金属Ru,Ni,Co对Au-Pd/TiO2-Al2O3催化剂催化噻吩加氢脱硫活性的影响,并采用X射线衍射、电感耦合等离子发射光谱、程序升温还原和程序升温脱附等方法对TiO2-Al2O3复合载体、Au-Pd/TiO2-Al2O3和Au-Pd-TM/TiO2-Al2O3(TM表示过渡金属)催化剂进行了表征。实验结果表明,掺杂过渡金属未改变Au-Pd/TiO2-Al2O3催化剂的结构;掺杂Ru或Ni增强了Au-Pd/TiO2-Al2O3催化剂的活性组分与TiO2-Al2O3复合载体的相互作用,降低了反应活化能,提高了催化剂活性组分的分散度和活性比表面积,改善了Au-Pd/TiO2-Al2O催化剂的吸附性能,从而提高了Au-Pd/TiO2-Al2O3催化剂催化噻吩加氢脱硫的活性;而掺杂Co的效果则与之相反。     

Tb掺杂对纳米TiO_2光催化活性的影响

以溶胶-凝胶法制备了纳米TiO2和掺杂Tb的TiO2(Tb-TiO2),用X射线衍射、示差扫描量热、热重分析、红外光谱和荧光光谱等技术对纳米TiO2和Tb-TiO2的结构进行了表征;考察了以纳米TiO2及Tb-TiO2为催化剂光催化氧化环己烷合成环己酮和环己醇的情况。表征结果表明,掺杂Tb后明显抑制了TiO2中锐钛矿相向金红石相的转变,提高了TiO2催化剂的热稳定性,晶格发生了膨胀现象,晶格膨胀可有效降低光生载流子的复合几率,减小晶粒尺寸,提高光催化活性;光催化氧化环己烷的实验结果表明,与TiO2催化剂相比,Tb-TiO2催化剂的环己烷转化率和环己酮、环己醇的选择性大幅度提高,表明Tb-TiO2催化剂的光催化活性和光催化效率提高。     

纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分     

纳米4-H碳化硅薄膜的掺杂现象

对纳米晶SiC薄膜进行了P和B的掺杂,B掺杂效率比P高,其暗电导预前因子与激活能遵守Meyer-Neldel规则,并有反转Meyer-Neldel规则出现.掺杂效率比非晶态碳化硅薄膜高是纳米碳化硅薄膜的特点之一.非晶态中的隧穿和边界透射对输运有一定贡献.     

Halogen-induced charge transfer polymerization of pyrrole in aqueous media

Simultaneous polymerization and doping of pyrrole have been carried out in the presence of a halogenic electron acceptor, bromine (Br₂) or iodine (I₂), in aqueous dispersion or in a two-phase solvent system. The morphology of the polypyrrole (PPY) so produced is granular and porous. The electrical conductivity of the PPY-I₂ charge transfer (CT) complex is of the order of 10¹ ohm⁻¹ cm⁻¹ while that of the PPY-Br₂ complex is about one order of magnitude less. Both complexes are stable in the atmosphere. The physicochemical properties of the PPY-I₂ and PPY-Br₂ CT complexes prepared under various experimental conditions are examined in detail.     

氢化非晶硅磷掺杂工艺条件的研究

本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Investigation of iodine as a donor in MBE grown Hg1−xCdxTe

N-type Hg_1−xCd_xTe layers with x values of 0.3 and 0.7 have been grown by molecular beam epitaxy using iodine in the form of CdI₂ as a dopant. Carrier concentrations up to 1.1 × 10¹⁸ cm⁻³ have been achieved for x = 0.7 and up to 7.6 × 10¹⁷ cm⁻³ for x=0.3. The best low temperature mobilities are 460 cm²/(Vs) and 1.2 × 10⁵ cm²/(Vs) for x=0.7 and x=0.3, respectively. Using CdI₂ as the dopant modulation doped HgTe quantum well structures have been grown. These structures display very pronounced Shubnikov-de Haas oscillations and quantum Hall plateaus. Electron densities in the 2D electron gas in the HgTe quantum well could be varied from 1.9 × 10¹¹ cm⁻² up to 1.4 × 10¹² cm⁻² by adjusting the thicknesses of the spacer and doped layer. Typical mobilities of the 2D electron gas are of the order of 5.0 × 10⁴ cm²/(Vs) with the highest value being 7.8 × 10⁴ cm²/(Vs).     

Co^3＋—modified Surface of LiMn2O4 Spinel for its Improvementof Electrochemical Properties

Cobalt was used to modify the surface of spinel LiMn2O4 by a solution technique to produce Co^3 -modified surface material (COMSM). Cobalt was only doped into the surface of LiMn2O4 spinel. XPS(X-ray photoelectron spectroscopy) analysis confirms the valence state of Co^3 . COMSM has stable spinel structure and can prevent active materials from the corrosion of electrolyte. The ICP(inductively coupled plasma) determination of the spinel dissolution in electrolyte showed the content of Mn dissolved from COMSM was smaller than that from the pure spinel. AC impedance patterns show that the charge-transfer resistance (Rct) for COMSM is smaller than that for pure spinel. The particles of COMSM are bigger in size than those of pure spinel according to the micrographs of SEM(scanning electron microscopy). The determinations of the electrochemical characterization show that COMSM has both good cycling performance and high initial capacity of 124.1 mA/h at an average capacity loss of 0.19 mAh/g per cycle.     

Thickness-dependence of stoichiometry and microstructure characteristics in correlation with conductivity type of CdTe films

CdTe films were prepared by physical vapour deposition on a substrate at room temperature (RT) as well as on a cold (LT) one using low deposition rate. The thickness-dependence of stoichiometry revealed an abrupt decrease in the Cd/Te ratio as the thickness increases. Change of thickness did not affect the type of observed (111) crystallographic texture, only the degree of preferred orientation is enhanced as the film grows. The internal strain was negligible while the crystallite size increased rapidly at small thickness (up to 400 nm), and less thickness dependence was observed with further film growth. However, thickness dependence of lattice parameters showed a minimum and a maximum at approximately 300 nm in the case of RT and LT, respectively. The observed change in conductivity from n- to p-type and its vital correlation with the stoichiometry and structural characteristics were presented. Based on thickness dependence of stoichiometry and lattice parameters as well as the conductivity type, formation and annihilation of lattice defects were considered.