Tc-P共掺杂单层MoS2光电特性的第一性原理计算

采用第一性原理的赝势平面波方法,对比研究了未掺杂和掺杂过渡金属Tc、非金属P及Tc-P共掺杂的单层MoS2的电子结构和光学性质.计算结果表明:掺杂改变了费米面附近的电子结构,使得导带向低能方向偏移,并且带隙由K点转化为Γ点,形成Γ点的直接带隙半导体.掺杂P使带隙值变小,形成p型半导体;掺杂Tc使带隙变宽,形成n型半导体;Tc-P共掺杂,由于p型和n型半导体相互调制,使得单层MoS2转变为性能更优的本征半导体;掺杂使光跃迁强度减小,且向低能方向偏移.     

水解工艺Yb3＋/Al3＋共掺石英玻璃的研制及特性表征

利用四氯化硅(SiCl₄)水解掺杂法结合高 频等离子体粉末熔融技术制备了Yb3＋/Al3＋共掺石英玻璃,并利用 X射 线衍射(XRD)、傅里叶变换红外(FTIR)光谱分析和热膨胀分析等对所制备玻璃样品的结 构特性、物理特性和光谱特 性进行了表征。结果表明,制备的Yb3＋/Al3＋共掺石英玻璃的密度和折 射率值与纯石英玻璃相接近,并且呈现出 较好的玻璃态,其热膨胀系数为2.87×10－6,具有较好的Yb3＋和Al 3＋掺杂均匀性,以及Yb3＋典型的吸 收特性和发射特性,表明采用本文方法制备的Yb3＋/Al3＋共掺石英玻璃 已具备成为大功率激光材料的潜质。     

K元素对CdS晶体光学及电学性能的影响

采用物理气相输运(PVT)法生长了直径为50 mm的K掺杂CdS晶体,对掺杂和未掺杂的CdS晶片进行显微观察、二次离子质谱(SIMS)成分分析、红外光谱透过率以及霍尔效应测试,研究了K元素掺杂对CdS晶体光学及电学性能的影响.生长时用KCl进行掺杂.显微观察显示,掺杂KCl后CdS晶体的微观形貌没有明显变化;SIMS成分测试表明,晶体中引入的杂质主要是K元素,而Cl元素未掺入晶体中.红外光谱透过率发现掺杂K元素的CdS晶体相比于未掺杂晶体,不仅在波长为2.5～ 10 μm内红外透过率显著下降,而且在波长为10μm以上时红外透过率甚至低于15％.另外,K元素掺杂CdS晶体电学性能也发生变化,晶体迁移率也由未掺杂的318 cm2/ (V·s)下降为146 cm2/ (V·s).     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.     

SOFC钙钛矿型阴极的性能优化及研究进展

钙钛矿结构氧化物因其优异的MIEC特性和催化性能,以及具有化学组成的选择灵活性和良好的稳定性等优点,成为最有前途和应用前景的固体氧化物燃料电池(SOFC)阴极材料.目前,S OF C的发展趋势是中低温化.但是,随着电池操作温度的降低,阴极极化损耗急剧增加,电池性能随之下降.考虑到中低温S O F C对阴极材料的要求,钙...     

MBE growth and characterization of in situ arsenic doped HgCdTe

We report the results of in situ arsenic doping by molecular beam epitaxy using an elemental arsenic source. Single Hg_1−xCd_xTe layers of x ∼0.3 were grown at a lower growth temperature of 175°C to increase the arsenic incorporation into the layers. Layers grown at 175°C have shown typical etch pit densities of 2E6 with achievable densities as low as 7E4cm⁻². Void defect densities can routinely be achieved at levels below 1000 cm⁻². Double crystal x-ray diffraction rocking curves exhibit typical full width at half-maximum values of 23 arcsec indicating high structural quality. Arsenic incorporation into the HgCdTe layers was confirmed using secondary ion mass spectrometry. Isothermal annealing of HgCdTe:As layers at temperatures of either 436 or 300°C results in activation of the arsenic at concentrations ranging from 2E16 to 2E18 cm⁻³. Theoretical fits to variable temperature Hall measurements indicate that layers are not compensated, with near 100% activation after isothermal anneals at 436 or 300°C. Arsenic activation energies and 77K minority carrier lifetime measurements are consistent with published literature values. SIMS analyses of annealed arsenic doping profiles confirm a low arsenic diffusion coefficient.     

ZnO压敏电阻器生产工艺的改进

压敏电阻器的生产工艺是影响产品质量的重要因素之一。通过试验，对生产工艺中，影响ＺｎＯ压敏电阻器直流老化性能的因素，如原材料细度、烧成气氛、成型密度、热处理温度和时间、掺杂等进行了研究，并据此确定了最佳工艺条件。     

ZnO陶瓷材料的负阻特性

介绍了ＺｎＯ陶瓷的负阻特性，主要研究了ＭｎＯ２掺杂和Ｎｉ２Ｏ３掺杂对ＺｎＯ陶瓷负阻特性的影响。     

碳材料在电化学催化还原CO2领域的应用

CO2电化学催化还原反应(CERR)是一种潜在的CO2转化方法,可以将CO2还原为高附加值的化工产品和化学燃料,实现温室气体的高效清洁利用,对解决能源危机与环境问题均具有十分重要的意义。CERR中催化剂的性质是决定和控制反应活性、选择性和稳定性的主要因素。与金属催化剂相比,非金属催化剂(碳材料)由于其具有组成可控、能量效率高和稳定性优异等特点,而备受关注。笔者总结了近几年CERR杂原子掺杂碳基催化剂的研究进展,讨论了杂原子掺杂碳材料的催化性能,及其在CERR中的催化活性中心和相关机理,总结了杂原子掺杂碳基催化剂的发展方向。     

氟掺杂对非晶硅薄膜特性的影响

采用电容结构研究了氟(F,Flourine)掺杂非晶薄膜漏电、击穿以及温度特性。结果表明,氟掺杂钝化了非晶膜中的缺陷和悬挂键,使非晶薄膜漏电降低两个数量级,同时使击穿电压升高。掺杂非晶薄膜的漏电与温度呈指数增长,增长系数为0.0375 K^-1,击穿电压随温度线性减小,系数为0.012 V·K^-1。