Ionoluminescence decay measured with single ions

A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino.     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

GaAs亚微米自对准工艺技术研究

总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

Studies on the structural and ionic transport properties at elevated temperatures of La1−xMnO3±δ synthesized by a wet chemical method

Structural transformation and ionic transport properties are investigated on wet-chemically synthesized La_1−xMnO₃ (x=0.0–0.18) compositions. Powders annealed in oxygen/air at 1000–1080 K exhibit cubic symmetry and transform to rhombohedral on annealing at 1173–1573 K in air/oxygen. Annealing above 1773 K in air or in argon/helium at 1473 K stabilized distorted rhombohedral or orthorhombic symmetry. Structural transformations are confirmed from XRD and TEM studies. The total conductivity of sintered disks, measured by four-probe technique, ranges from 5 S cm⁻¹ at 298 K to 105 S cm⁻¹ at 1273 K. The ionic conductivity measured by blocking electrode technique ranges from 1.0×10⁻⁶ S cm⁻¹ at 700 K to 2.0×10⁻³ S cm⁻¹ at 1273 K. The ionic transference number of these compositions ranges from 3.0×10⁻⁵ to 5.0×10⁻⁵ at 1273 K. The activation energy deduced from experimental data for ionic conduction and ionic migration is 1.03–1.10 and 0.80–1.00 eV, respectively. The activation energy of formation, association and migration of vacancies ranges from 1.07 to 1.44 eV.     

关于离子注入中温升的探讨

本文在理论和试验两个方面探讨了离子注入中的热效应和温升现象。注入样品的温升对离子注入层的性能有直接影响。分析了理论计算注入样品温升的一些情况。给出了实际测量注入样品温升的几种试验方法。阐明了控制注入样品温升的若干可能途径。     

Density functional theory studies of Cu-zeolite de-NOx catalysts

Summary Recent progress in the modelling of exchanged Cu sites and their interactions with small molecules, based on DFT cluster calculations, is briefly reviewed.     

Electrochemical properties of ultra-long,aligned, carbon nanotube array electrode in organic electrolyte

The electrochemical properties of an electrochemical double-layer capacitor electrode based on an ultra-long (500 μm), aligned, carbon nanotube array (ACNTA) in Et₄NPF₆/propylene carbonate electrolyte are examined. The specific capacitance of the ACNTA electrode in an organic electrolyte is 24.5 F g⁻¹, which is larger than that obtained in an aqueous electrolyte. The results of ac impedance measurements show that the ACNTA electrode gives a high power density and an excellent rate capability in an organic electrolyte. It is shown that the ACNTA electrode has a lower equivalent series resistance and a better rate capability than activated carbon electrode. This is due to the fact that ACNTA possesses a larger pore size and a more a regular pore structure. Both these features are conformed by scanning electron microscopic and nitrogen gas adsorption studies.     

有色冶金中的离子交换膜电解技术

离子膜电解技术在有色冶金工业中有重要的应用价值 ,膜的选择透过性和不同的电极过程相结合可完成各种冶金过程。综述了离子交换膜电解技术在高纯金属的制备、无机物的电化合成、多价离子氧化状态的控制及金属离子的分离等冶金领域的研究现状 ,分析了该技术的特点 ,并指出了该技术要实现工业化必须解决的主要问题