辐射基因治疗黑色素瘤的实验研究

研究低剂量辐射结合腺病毒(AdCMV)载体介导的p53基因转导对人黑色素瘤A375细胞系基因转移效率和辐射敏感性的影响.用复制缺陷的重组腺病毒载体(AdCMV-p53)介导入p53基因转染1 Gy X-射线预辐照的A375细胞系,RT-PCR检测mRNA水平,流式细胞仪测定细胞周期阻滞及外源性P53蛋白表达情况,克隆形成率测定辐射后细胞存活率.用携带报道基因的复制缺陷重组腺病毒载体AdCMV-GFP作为对照.实验结果表明,1 Gy X-射线辐照可较高地增加AdCMV-p53对A375细胞的基因转导效率,转导的外源性野生型p53可在A375(wtp53)细胞中高效表达,并诱导细胞周期G1期阻滞;单纯转导p53对A375细胞无明显诱导凋亡和生长抑制效应;而转导p53后给予X-射线辐射,当剂量达到4 Gy及其以上时,48h后AdCMV-p53感染组细胞开始出现明显形态改变,克隆存活率明显低于AdCMV-GFP感染组和未感染组,显示存活曲线下移,4Gy时细胞存活率就减少了1个量级.小剂量辐射既可有效增加AdCMV-p53介导的p53转导,又不会对患者产生明显副作用;转导野生型p53的人黑色素瘤A375细胞系显示P53过表达;过表达的P53蛋白虽然对A375细胞无明显生长抑制及凋亡诱导作用,但可明显增加其辐射敏感性.这表明p53是基因治疗黑色素瘤较好的侯选基因,也为临床上放疗联合基因治疗黑色素瘤提供了实验室依据,即减轻临床上对于辐射敏感性差的肿瘤单纯大剂量照射或单纯基因疗法中rAd-p53制品用量过大而给病人造成的毒副作用.     

Vacancy defects induced in the track region of 132 MeV C irradiated SiC

Positron annihilation lifetime spectroscopy (PALS) and electron paramagnetic resonance (EPR) have been used in this work to investigate vacancy defects induced in the track region of 132 MeV ¹²C irradiated silicon carbide. Irradiations have been performed at room temperature at a fluence of 2.5 × 10¹⁴ cm⁻² in N-low doped 6H–SiC and 3C–SiC monocrystals. Silicon monovacancies have been detected in both polytypes using EPR. Their charge state and concentration have been determined in the track and cascade region of the C⁺ ions. PALS measurements performed as a function of temperature have shown the presence of V_Si–C divacancies in the track region for both polytypes.     

小鼠脾淋巴细胞辐射死亡与凋记之间的关系

探讨细胞凋亡在小鼠脾脏辐射损伤与重建中的作用及其机制,为急性放射病的防治提供依据。用原位末端标记、ＤＮＡ电泳和免疫组化技术观察经２￣８Ｇｙ不同剂量γ射线整体照射后,小鼠脾脏淋巴细胞凋亡的动态变化过程和Ｂａｘ、Ｂｃｌ－２蛋白在其中的作用。结果表明,（１）照射后早期淋巴细胞凋亡率迅速增加,如６Ｇｙ照射后４ｈ和１ｄ凋亡率分别为对照值的４．９和９．７倍;凋亡率还随照射剂量的增加而迅速升高;照射后８ｈ当照射     

秦山核电站考验元件辐照后燃料的晶粒长大及温度分布

文章介绍了秦山核电站考验元件辐照后燃料ＵＯ２的微观分析结果。用定量金相方法，结合晶粒长大动力学原理，计算出元件的中心温度，结果与ＦＲＡＰ－ＣＯＮ程序分析相符，以辐照后检验结果为基础，确定了评价国产燃料ＵＯ２辐照行为的参数Ｋ和Ｑ值。     

Redistribution of indium implanted in silicon due to thermal treatment and swift heavy ion irradiation

Silicon layers of 150 nm thickness supersaturated with indium up to ≈5 at% were prepared by multiple energy ion implantation. A redistribution of the implanted impurities caused by post-implantation annealing and following irradiation with swift Bi ions has been observed by means of Rutherford backscattering spectrometry in channelling configuration (RBS/C). It is demonstrated by TEM that the thermal decomposition of the supersaturated Si〈In〉 solution is accompanied by polycrystalline recrystallisation of amorphous silicon, precipitation of the second phase (In) both within the implanted layer and on the surface, as well as by impurity redistribution. The main features of the structure transformation under the influence of the Bi ion irradiation are discussed.     

离子辐照后4H-SiC晶体退火前后的光谱研究

分析了高能pb27 辐照预注入12C 的和未预注入12C 4H-SiC样品在,退火前后傅立叶变换红外光谱和拉曼散射光谱的变化.从傅立叶变换红外光谱可以知道,900℃以上的退火使损伤层发生显著恢复;在拉曼散射光谱中可以看到1200℃退火后有石墨相的存在.实验结果说明,高温退火有利于损伤的恢复,使注入到碳化硅中的碳原子发生聚集并引起相变.     

围板连接螺栓的辐照促进应力腐蚀裂纹研究

在压水堆(PWR)中,堆芯部件围板连接螺栓的材质是奥氏体不锈钢,长期处于强中子辐照区域.当辐照超过一定限值后,即使应力水平很低,但由于辐照过程中的缺陷、相转变、晶界偏析以及应力变化等原因,材料的塑性逐步丧失,辐照促进应力腐蚀裂纹(IASCC)随之发生.使用高纯度材料、控制水质和改进连接结构可以有效地减缓围板螺栓辐照促进应力腐蚀裂纹的产生.     

The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation

This paper presents results of the effect of electron beam irradiation under UHV conditions on InGaAs/GaAs and GaAsN/GaAs systems using Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) as surface analytical techniques. The ternary compounds In_0.53Ga_0.47As and In_0.2Ga_0.8As were irradiated by an electron beam under identical conditions (5 KeV; 10⁻³ A cm⁻²; for 60 min). The results showed that the compound In_0.53Ga_0.47As was stable under electron irradiation whereas changes in the Auger signal In-M₄₅N₄₅N₄₅ revealed that the electron beam had a significant effect on the compound In_0.2Ga_0.8As. GaAsN growth at 590 °C on GaAs is believed to produce a surface containing defects that is chemically unstable when bombarded by electrons. It was found that heating this compound at 730 °C stabilised the surface, protecting it from the effect of electron irradiation.     

Radiation stability of ceramics: Test cases of zirconia and spinel

The study of the effects of radiation in ceramics of potential use in electronic, space and nuclear industries appears to be a major challenge in the next decades. The collect and analysis of data dealing with the production and recovery of radiation damage in this type of materials are thus tasks of prime interest. In this article, we present a review of the main structural and chemical modifications observed in test case ceramics (yttria-stabilized zirconia and magnesium-aluminate spinel) submitted to ion bombardment and thermal treatments. We show that the stability under irradiation depends on the intrinsic properties of the materials and on irradiation parameters such as the ion energy, fluence and temperature. We also demonstrate that the recovery of damage upon annealing at elevated temperatures induces drastic physico-chemical modifications of the matrix.     

尼龙-1010的增强辐射交联

用凝胶测定技术及广角X射线衍射(Wide angle X-ray diffraction,WAXD)等方法研究了尼龙-1010与添加了交联剂4,4'-双马来酰亚胺二苯甲烷(4,4'-Bismaleimideodephenylmathan,BMI)的尼龙-1010的辐射交联规律,试样的交联G值,结晶结构随吸收剂量的变化,讨论了交联剂存在下辐照对结晶损伤的影响.结果表明,多官能团单体的存在,不仅增强了辐射交联结构的生成,同时也促进了其结晶结构的辐射损伤,损伤的初始剂量减小.BMI单体主要存在于界面区,抑制应力键裂解、加强了界面交联,进一步导致结晶表面缺陷的积累和结晶度Wc下降,表明辐射损伤由晶面开始而逐步向结晶内部伸入.结晶度Wc、微晶尺寸Lhkl与剂量D关系表明,辐照初期W1c及Lhkl的增加与应力链断裂、氢键作用下分子链段重排有关,高吸收剂量的Wc与Lhkl的变化率与结晶比表面大小相关,010面较100面更易受损伤.