微脉冲激光雷达测量大气水平能见度

为了改进乃至革新大气能见度的探测技术,探索新型、快速、准确测量大气能见度的方法,采用自行研制的能见度微脉冲激光雷达,进行了水平大气能见度测量实验,并同已经商品化的能见度仪NQ-1进行了同步对比测量。实验结果表明,在水平能见度较差时,微脉冲激光雷达和能见度仪具有很高的相关性,相关系数达到了0.88;在水平能见度较好的时候,相关系数保持在0.73以上。说明能见度微脉冲激光雷达系统可以应用于大气能见度的探测。     

真空／控制气氛无钎剂激光软钎焊系统的研制

结合激光软钎焊技术的特点，研制了真空／控制气氛无钎剂激光软钎焊系统，以便利用激光软钎焊的优点，进行真空／控制气氛下激光非接触加热的无钎剂技术研究。     

磁控溅射法制备AZO薄膜的工艺研究

用XRD测试仪、分光光度计、四探针等测试仪器,探讨了制备气氛、退火温度和退火环境对AZO薄膜光电性能及结构的影响。结果表明:氧气和氩气的体积流量比为2∶1时,薄膜透光率最高(95.33%);退火有利于薄膜结晶;低于400℃退火时,温度越高薄膜电阻越小,超过400℃后,真空中退火温度再升高电阻变化不大,而空气中退火温度再升高电阻反而变大。     

基于焦面阵列FPA(CCD)探测器的捕获、跟踪和瞄准系统研究

对国内外近年已研制出的多种捕获、跟踪、瞄准系统(ATP)的基本结构进行了分析研究,并围绕基于焦面阵列FPA(CCD)探测器的ATP光路图、ATP发射/捕获协议、ATP发射/捕获方法等,引入提出了一系列最新技术实现方法,为进一步的实验及产品研究提供了基础。     

碳化硅加热元件的电性能和使用

本文介绍碳化硅加热元件的电特性、表面负荷以及工作气氛对它的影响，并对它设计和使用要点举例予以说明。     

火箭弹道附近大气参数辨识系统的研究

研究了利用雷达实测数据对沿火箭飞行弹道的大气参数进行辨识和外推落点的方法，进而提出了一个对效力射诸元进行修正的方法。在此基础上，对软件系统进行了设计。最后通过仿真试验，分析了系统的准确性。     

用RAP法引上技术生长KCL晶体

用RAP法(reactivo atmosphere process)处理KCl熔体,在不改变生长气氛和RAP继续处理的情况下,提拉生长KCl晶体,以解决高纯、大尺寸、生长速度快、成品率高和有较大经济效益的问题。     

掺铒铝酸钇(Er~(3+):YAlO_3)单晶生长

开拓新波段的应用是现今固体激光器发展方向之一。掺铒铝酸钇(Er~(3+):YAlO_3)激光晶体是1.66μm及2.7—2.9μm波段固体激光器重要工作物质。本文着重描述Er~(3+)YAlO_3原料硝酸去水、氮气氛加少量氧以及熔体过热等对生长的晶体质量的影响。     

Hot Corrosion of Silica

The high-temperature corrosion of bulk silica glass was studied in pure oxygen and in SO₃-containing oxygen atmospheres in the presence of liquid sulfate deposits at temperatures of 700° and 1000°C. No reaction and devitrification were observed without Na₂SO₄ on the surface. The wetting of the silica by the sulfate, the tendency toward basic fluxing, and the crystallization of the silica incrased with the activity of Na₂O. The most extensive degradation of vitreous silica occurred by crystallization, and the resulting spalling under basic conditions and thermal cycling at basic conditions were parabolic. This behavior is explained by a model in which the crystallization is controlled by sodium at the glass-crystal interface and its diffusion into the glass. This sodium diffuses into the glass before crystallization and is swept ahead of the crystallization front.     

Active Corrosion of Sintered α-Silicon Carbide in Oxygen–Chlorine Gases at Elevated Temperatures

The active corrosion of sintered α-silicon carbide from heat exchanger tubes in the temperature range 900° to 1100°C in gas mixtures containing 2% Cl₂ by volume with additions of O₂ or H₂ has been investigated by thermogravimetric analysis and subsequent examination of the corrosion products. The presence of a small amount of oxygen accelerated rapid active corrosion in chlorine-containing gas mixtures, but the corrosion was suppressed by an active-to-passive transition when the concentration of oxygen in the gas mixture was too high. Low rates of attack were observed in the environments containing H₂ even when the chlorine potential was high. The concentration of oxygen necessary to produce the active-to-passive transition was found to vary from one material to another and may be related to the amount of excess carbon in the sintered silicon carbide.