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131.
氧气生产单位保用户用气一旦出现较为紧张的局面时,如何正确处理保安全生产运行、保用户生产、安排抢修时间三者之间的关系,值得关注与研究。 相似文献
132.
Computational models and electrophysiological data suggest that the CA3 subregion of the hippocampus supports the formation of arbitrary associations; however, no behavioral studies have been conducted to test this hypothesis. Rats with neurotoxin-induced lesions of dorsal dentate gyrus (DG), CA3, or CA1 were tested on object-place and odor-place paired-associate tasks to test whether the mechanism that supports paired-associate learning is localized to the CA3 subregion of the dorsal hippocampus or whether all hippocampal subregions contribute to paired-associate learning. The data indicate that rats with DG or CA1 lesions learned the tasks as well as controls; however, CA3-lesioned rats were impaired in learning the tasks. Thus, the CA3 subregion of the dorsal hippocampus contains a mechanism to support paired-associate learning. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
133.
苯乙烯与1-(2-叔丁基过氧异丙基)-3-异丙烯基苯(D120)能进行自由基共聚合反应,聚合后过氧基团以侧基的形成被保留在共聚物大分子链上,凝胶色谱分析发现,随原料单体中D120比例增加,共聚物的分子量减小,分子量分布变窄,DSC分析发现共聚物中过氧基团的分解温度随D120结构单元含量的增加而下降,但仍高于D120单体过氧基团的分解温度,苯乙烯与D120的竞聚率为:rD120=0.700,rSt=0.714。 相似文献
134.
Syed M. Alam Donald E. Troxel Carl V. Thompson 《Analog Integrated Circuits and Signal Processing》2003,35(2-3):199-206
In this paper, we describe a comprehensive layout methodology for bonded three-dimensional integrated circuits (3D ICs). In bonded 3D integration technology, parts of a circuit are fabricated on different wafers, and then, the wafers are bonded with a glue layer of Cu or polymer based adhesive. Using our layout methodology, designers can layout such 3D circuits with necessary information on inter-wafer via/contact and orientation of each wafer embedded in the layout. We have implemented the layout methodology in 3DMagic. Availability of 3DMagic has led to interesting research with a wide range of layout-specific circuit evaluation, from performance comparison of 2D and 3D circuits to layout-specific reliability analyses in 3D circuits. Using 3DMagic, researchers have designed and simulated an 8-bit encryption processor mapped into 2D and 3D FPGA layouts. Moreover, the layout methodology is an essential element of our ongoing research for the framework of a novel Reliability Computer Aided Design tool, ERNI-3D. 相似文献
135.
质子交换铌酸锂波导MMI光功分器 总被引:1,自引:1,他引:0
利用三维非旁轴近似光束传输法对退火质子交换铌酸锂渐变折射率分布波导中的自镜像效应进行分析与模拟 .在此基础上 ,利用退火质子交换技术在 X切 Y传铌酸锂衬底上进一步制作了 1× 8MMI光功分器 .测试表明器件实现了 1路分成 8路的光功分功能 . 相似文献
136.
正压冲固基础海洋平台冰激振动动力响应 总被引:1,自引:0,他引:1
正压冲固基础海洋平台是一种新型平台桩基结构形式。采用三维有限元的数值分析方法,建立了正压冲固平台的三维有限元模型。基于冰激强迫振动理论提出动冰载荷的计算方法,根据海冰破碎长度和冰速确定冰载周期,冰强度限制的水平冰力作为冰力峰值,得到的动冰载荷用于正压冲固平台的动力响应分析,并依照规范计算了6倍桩径处刚性固定时的动力响应。三维有限元方法计算得到的动力响应大于6倍桩径刚性固定时的计算结果,结构安全性评估偏于安全。 相似文献
137.
A ternary blend system comprising poly(cyclohexyl methacrylate) (PCHMA), poly(α‐methyl styrene) (PαMS) and poly(4‐methyl styrene) (P4MS) was investigated by thermal analysis, optical and scanning electron microscopy. Ternary phase behaviour was compared with the behaviour for the three constituent binary pairs. This study showed that the ternary blends of PCHMA/PαMS/P4MS in most compositions were miscible, with an apparent glass transition temperature (Tg) and distinct cloud‐point transitions, which were located at lower temperatures than their binary counterparts. However, in a closed‐loop range of compositions roughly near the centre of the triangular phase diagram, some ternary blends displayed phase separation with heterogeneity domains of about 1 µm. Therefore, it is properly concluded that ternary PCHMA/PαMS/P4M is partially miscible with a small closed‐loop immisciblity range, even though all the constituent binary pairs are fully miscible. Thermodynamic backgrounds leading to decreased miscibility and greater heterogeneity in a ternary polymer system in comparison with the binary counterparts are discussed. © 2003 Society of Chemical Industry 相似文献
138.
Kenji Nomura Hiromichi OhtaKazushige Ueda Toshio Kamiya Masahiro HiranoHideo Hosono 《Thin solid films》2003,445(2):322-326
We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO3(ZnO)m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 105. The field-effect mobility increased from ∼1 to ∼10 cm2 (V s)−1 as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds. 相似文献
139.
MoSi2-based intermetallics containing different volume fractions of MoB or Mo5Si3 were fabricated by hot-pressing MoSi2, MoB, and Mo5Si3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo5Si3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 °C, except when the Mo5Si3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi2 containing materials as consisting mostly of SiO2. The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 °C when compared with pure MoSi2. However, in contrast with the pure MoSi2 material, oxidation at 1400 °C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo5Si3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo5Si3 additions to MoSi2 tended to be detrimental for the mechanical and oxidative properties. 相似文献
140.