Irradiation of large area Mylar membrane and characterization of nuclear track filter

Ion irradiation of Si⁸⁺ ion beam of 100 MeV was scattered by a gold foil on a Mylar membrane of 25 Μm thickness in the form of film roll (width, 12.5 cm and length, 400 cm) at the Nuclear Science Centre, New Delhi. The characterization of etched nuclear tracks was carried out by gas permeation measurements. The samples cut from the film roll of required size for permeability measurements were etched in a controlled manner in a constant temperature bath of 6N NaOH solution. The opening of the conical etched tracks was characterized by hydrogen gas permeation.     

硫酸/盐酸比例和Al~(3+)含量对铝箔隧道孔生长的影响

研究了硫酸/盐酸比例、温度和Al3+含量对高纯铝箔隧道孔生长的影响,发现随着硫酸浓度增加,温度对隧道孔极限长度和孔径的影响减小,在本文条件下隧道孔生长的临界温度最低可降低到35℃。在电解液中一定含量的Al3+可以避免铝箔表面形成大孔,从而改善隧道孔分布均匀性。     

一种激光测厚装置

介绍一种新型激光测厚装置 ,描述了它的结构框架及工作过程     

耦合腔激光器的波长调谐与频率调制特性分析

考虑用激光器与调制器直接耦合以及耦合槽的影响，用散射矩阵法及二步等效反射率法，对沟槽耦合腔激光器的波长调谐和频率调制特性的分析表明，数学处理简单，物理图像清晰。     

激光微焊接质量的模糊识别技术研究

讨论了激光微焊点焊接质量的模糊识别的概念，数学模型及其应用方法，并介绍了系统的硬件组成。     

Electron acceleration by single and double laser beams

The longitudinal electric field of single and double Gaussian laser beams are used to accelerate electrons. The longitudinal field of the single beam is concentrated on the axis and is favourable for acceleration. A set of two beams is considered. Beams run parallel, collinearly, overlap partially and have a phase difference iπ in between. As a result, the transverse components of fields cancel each other while the longitudinal components are double-fold. In both schemes, the electrons are accelerated in lengths of the Rayleigh range, which is common to the plasma-based accelerators.     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

混合集成电路激光功能调值技术

本文提出了激光功能微调技术在高精度混合集成电路上的应用，讨论了关键技术问题，并以实例具体说明。该技术的应用为研制高精度混合集成电路开辟了新途径。     

Studies on Three—electrode Semiconductor Lasers

Using the ray trace method,three-section semiconductor lasers are studied .An analytic expression of output power for the three-section semiconductor lasers is derived for the first time.Frome this expression,threshold condition is also obtained.