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121.
The energies of various steps on the As-terminated GaAs(001)-2 × 4 surface are evaluated using a novel, approximate method of “linear combination of structural motifs”. It is based on the observation that previous total energy minimizations of semiconductor surfaces produced invariably equilibrium structures made of the same recurring local structural motifs, e.g. tetrahedral fourfold Ga, pyramidal threefold As, etc. Furthermore, such surface structures were found to obey consistently the octet rules as applied to the local motifs. We thus express the total energy of a given semiconductor surface as a sum of (i) the energies M of the local structural motifs appearing in the surface under consideration and (ii) an electrostatic term representing the Madelung energy of point charges resulting from application of the octet rule. The motif energies are derived from a set of pseudopotential total energy calculations for flat GaAs(001) surfaces and for point defects in bulk GaAs. This set of parameters suffices to reproduce the energies of other (001) surfaces, calculated using the same pseudopotential total energy approach. Application to GaAs(001)-2 × 4 surfaces with steps reveals the following. (i) “Primitive steps”, defined solely according to their geometries (i.e. step heights, widths and orientations) are often unstable. (ii) Additional, non-geometric factors beyond step geometries such as addition of surface adatoms, creation of vacancies and atomic rebonding at step edges are important to lower step energies. So is step-step interaction. (iii) The formation of steps is generally endothermic. (iv) The formation of steps with edges parallel to the direction of surface As dimers (A steps) is energetically favored over the formation of steps whose edges are perpendicular to the As dimers (B steps). 相似文献
122.
就用双辊铸轧机(TRC)生产薄、宽铸轧带技术进行研究并优化铸轧工艺。研究结果表明:3mm厚的铸轧带不仅表面变形.而且整个厚度内部层都发生变形,表面层的铝基中具有较高的合金元素饱和度。 相似文献
123.
In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p2-Ga0.8In0.2As0.19Sb0.81/p1-Ga0.9In0.1As0.09Sb0.91 and N1-GaSb/n2-Ga0.9In0.1As0.09Sb0.91/p-Ga0.8In0.2As0.19Sb0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N1-n2-p structure is more sensitive than that with the p1-side surface recombination velocity for the N-p2-p1 structure. In the N-p2-p1 structure with the incident light from the p1-side surface, two-color detection is achieved. 相似文献
124.
节流式差压流量计的发展和现状 总被引:2,自引:0,他引:2
文章介绍节流式差压流量计的特点及标准化进程,煤气流量测量中存在的难点以及正在试图解决的途径。 相似文献
125.
简要介绍了湘潭新大粉末冶金设备制造有限公司研制的一体化真空烧结炉的炉子结构、脱蜡系统、工艺气体的引入系统、设备的控制系统以及炉子性能的鉴定结果。 相似文献
126.
127.
The object of this paper is to demonstrate the usefulness of the transalkylation reaction for determining chemical structural features of products derived from coal. For example, the method is applied to derivatized coals, coals modified by thermolysis, and materials physically or chemically separated from coals. Data are presented for the pyridine soluble and insoluble parts of two coals, an O-methylated coal, a Birch reduced coal, a solvent refined coal, and a coke. Similarities and differences in chemical make-up of these materials are discussed. 相似文献
128.
A framework is presented for examining the effectiveness of limiting and modelling arguments used in the analysis of fluid
flows. It consists of examining the consequences of the arguments on the flow problem as a whole and breaking down the limiting/modelling
process into a sequence of steps and associated sequence of flow problems, termed here as ‘lidels’. The notion of validity
of lidels is given. Several examples are given to explain the present approach.
Invited general lecture at 3rd ACFM, Tokyo, September 1986 相似文献
129.
130.
As part of a study of the possible application of polymerisable Langmuir-Blodgett (LB) films as ultra-fine-line e-beam resists, an investigation of the variation of film structure of 22-tricosenoic acid with differing deposition conditions has been made. Unexpected effects with significant implications for deposition speed and resist sensitivity have been observed, and the new techniques for film characterisation developed during the investigation have resulted in a revised model of deposition explaining the observed independence of the disorder causing optical scattering and the macroscopic features observed by polarised microscopy. 相似文献