高基质普通烧镁砖的研制及应用

在普通烧镁砖中,提高基质相原料纯度,可使精炼铬铁炉炉衬寿命明显提高。     

Radiation damage effects in layered thin film MgO/HfO2 structures

In this report, we present a study of a thin film tri-layer structure, HfO₂/MgO/HfO₂, irradiated at room temperature with 10 MeV Au ions over a wide fluence range from 5 × 10¹³ to 3.7 × 10¹⁶ Au/cm². The tri-layer structure is a model representation for the microstructure in a composite dispersion nuclear fuel or waste form. Microstructural and chemical composition changes were examined by transmission and scanning transmission electron microscopy (TEM & STEM) combined with energy dispersive X-ray spectroscopy (EDXS), grazing incidence X-ray diffraction (GIXRD) and Rutherford backscattering spectroscopy (RBS) techniques. The microstructural evolution in the HfO₂/MgO/HfO₂ trilayer was similar to the radiation damage behavior of the individual HfO₂ and MgO constituents. For instance, we observed an absence of amorphization in both the MgO and HfO₂ layers and a phase transformation of HfO₂ from the monoclinic to the tetragonal HfO₂ polymorph. In addition, we observed the formation of void-type defects at one of the MgO/HfO₂ interfaces. Such voids are not characteristic to either bulk material (MgO or HfO₂) exposed to ion irradiation.     

Relationship between radiation damage anisotropy in MgO and YSZ single crystals and the Ion/Atom ratio deposition parameter in biaxially-textured MgO and YSZ thin films fabricated by ion beam assisted deposition

To elucidate the underlying physics of ion beam assisted deposition (IBAD), irradiation damage effects in magnesia (MgO) and yttria-stabilized zirconia (YSZ) were investigated. Ion irradiations were performed on MgO and YSZ single crystals of three low-index crystallographic orientations using 100 and 150 keV Ar⁺ ions over a fluence range from 1 × 10¹⁴ to 5 × 10¹⁶ Ar/cm². Damage accumulation was analyzed using Rutherford backscattering spectrometry combined with ion channeling. Damage evolution with increasing ion fluence proceeded via several characteristic stages and the total damage exhibited a strong dependence on crystallographic orientation. For both MgO and YSZ, damage anisotropy was maximal at a stage when the damage saturated, with the (1 1 0) crystallographic orientation being the most radiation damage resistant. The Ion/Atom ratio deposition parameter reported for IBAD of MgO and YSZ films was found to correlate with the damage plateau stage described above. Finally, the role of the Ion/Atom ratio is discussed in terms of radiation damage anisotropy mechanism.     

MgO部分稳定氧化锆陶瓷的抗渣侵蚀性研究

分别以3.5%(质量分数,下同)MgO部分稳定或4?O部分稳定的ZrO2陶瓷材料为试样,以CaO-Fe2O3-SiO2系的3种不同碱度与Fe2O3含量的渣为侵蚀剂,对试样分别进行静态和动态旋转(试样与渣的相对速率分别为0.06和0.5 m.m in-1)侵蚀试验,研究渣的碱度、流速及Fe2O3含量对材料抗侵蚀性的影响。结果发现,MgO部分稳定ZrO2材料抗渣侵蚀性较好,试样在渣线部位较严重的侵蚀归因于Marangoni效应。试样侵蚀情况与渣的碱度、成分有密切关系,高碱度渣侵蚀的方式主要是形成新的化合物而降低试样强度,中碱度或低碱度高Fe2O3渣则先将稳定剂MgO溶出,使材料遭受侵蚀的同时还发生相变化。     

高纯镁砂与西藏铬矿间固相反应的研究

为了考察镁砂与铬矿间的反应过程及其特征,以高纯镁砂颗粒和西藏铬矿细粉为原料,在200 MPa下制成50 mm×20 mm的试样,然后在高温隧道窑中于1 750℃烧成,并对烧成后的试样进行BSE和EDS分析。结果表明:随着距离镁砂-铬矿边界距离的增加,镁砂颗粒内部Cr、Fe、Al的质量分数均减少,镁砂颗粒边缘富含Fe,颗粒内部Cr含量较高。镁砂-铬矿边界呈直接结合,镁砂内的尖晶石相分布较均匀。     

氧化镁铵盐法制备高纯过氧化镁

在氯化铵溶液体系中,以氧化镁、过氧化氢为原料,制备高纯过氧化镁。研究表明,在氧化镁活性100左右,氯化铵占氧化镁质量10%,磷酸氢钠占氧化镁质量0.1%,过氧化氢与氧化镁质量比4∶1,反应温度40℃,反应时间30min的条件下,可制备出纯度大于90%的过氧化镁。     

Temperature dependence of lattice disorder in Ar-irradiated (1 0 0), (1 1 0) and (1 1 1) MgO single crystals

To better appreciate dynamic annealing processes in ion irradiated MgO single crystals of three low-index crystallographic orientations, lattice damage variation with irradiation temperature was investigated. Irradiations were performed with 100 keV Ar ions to a fluence of 1 × 10¹⁵ Ar/cm² in a temperature interval from −150 to 1100 °C. Rutherford backscattering spectroscopy combined with ion channeling was used to analyze lattice damage. Damage recovery with increasing irradiation temperature proceeded via two characteristic stages separated by 200 °C. Strong radiation damage anisotropy was observed at temperatures below 200 °C, with (1 1 0) MgO being the most radiation damage tolerant. Above 200 °C damage recovery was isotropic and almost complete recovery was reached at 1100 °C. We attributed this orientation dependence to a variation of dynamic annealing mechanisms with irradiation temperature.     

CeO2 和MgO助烧剂对矾土基莫来石合成料烧结的影响

以高铝矾土碎矿(w(Al2O3)为75%~84%)和煤矸石(w(Al2O3)约45%)为原料,按矾土基莫来石合成料的设计成分要求(w(Al2O3)为68%~72%)进行配比,于1500~1700℃分别保温3h煅烧合成了矾土基莫来石,并分别研究了助烧剂CeO2和MgO单独加入,CeO2 MgO复合加入,复合加入时CeO2与MgO的比例以及复合加入量对矾土基莫来石合成料烧结性能的影响。结果表明:加入CeO2 MgO复合助烧剂比单独加入CeO2或MgO的促烧结效果要好,当CeO2 MgO外加量为0.75%,CeO2与MgO质量比为1/1时,可使试样的烧结温度降至1600℃(不加助烧剂的为1700℃),得到显气孔率0.9%,体积密度为2.84g·cm-3,荷重软化开始温度为1570℃的合成莫来石;显微结构分析表明,此合成料荷重软化温度较高的原因是发育良好的柱状莫来石构成了交错连锁的网络结构,同时TiO2大部分固溶在莫来石晶体中。     

镁铝尖晶石和铬矿对镁质浇注料烧结的影响

研究了加入镁铝尖晶石和铬矿砂对SiO2微粉结合镁质浇注料烧结的影响。结果表明:(1)加入适量的镁铝尖晶石或铬矿砂对于提高镁质浇注料的烧结程度和强度均有较明显的作用,但加入量不能太多,在本试验条件下,加入镁铝尖晶石和铬矿砂的最佳质量分数分别为12%和10%;(2)加入镁铝尖晶石的镁质浇注料在强度方面要好于加入铬矿砂的;(3)加入的镁铝尖晶石作为晶种,促进了亚白刚玉粉和α-Al2O3微粉在镁质浇注料中生成镁铝尖晶石,铬矿砂的加入则生成了大量的镁铬尖晶石和少量的镁铝铬尖晶石。     

Si3N4对镁质浇注料抗渣性能的影响

以95烧结镁砂为主要原料,以SiO2微粉为结合剂,在配料的细粉部分分别以0、3%、4%、5%的β-Si3N4细粉替代等量的镁砂细粉,搅拌均匀后浇注成氮化硅含量不同的镁质坩埚试样。选用宝钢中间包渣,采用静态坩埚法,在1550℃3h条件下对这些坩埚试样进行了抗渣试验。试验结果表明:加入Si3N4可以明显改善镁质浇注料的抗渣性能,并且随着Si3N4加入量的增加,试样的抗渣性能提高;在含氮化硅的镁质浇注料表面,由于Si3N4被氧化为SiO2而形成了致密烧结层,能阻止渣的进一步渗透;在加入Si3N4的镁质浇注料试样内部深处,由于氧分压非常低,Si3N4稳定存在;由于Si3N4在还原气氛下难以烧结,造成镁质浇注料内部结构疏松。