Thickness-dependence of stoichiometry and microstructure characteristics in correlation with conductivity type of CdTe films

CdTe films were prepared by physical vapour deposition on a substrate at room temperature (RT) as well as on a cold (LT) one using low deposition rate. The thickness-dependence of stoichiometry revealed an abrupt decrease in the Cd/Te ratio as the thickness increases. Change of thickness did not affect the type of observed (111) crystallographic texture, only the degree of preferred orientation is enhanced as the film grows. The internal strain was negligible while the crystallite size increased rapidly at small thickness (up to 400 nm), and less thickness dependence was observed with further film growth. However, thickness dependence of lattice parameters showed a minimum and a maximum at approximately 300 nm in the case of RT and LT, respectively. The observed change in conductivity from n- to p-type and its vital correlation with the stoichiometry and structural characteristics were presented. Based on thickness dependence of stoichiometry and lattice parameters as well as the conductivity type, formation and annihilation of lattice defects were considered.     

Thermally stimulated discharge current studies in pure and fe-doped polystyrene films

Studies were made on the thermally stimulated discharge currents (TSDCs) in pure (undoped) and Fe-doped polystyrene films as a function of polarizing field, polarizing temperature and dopant concentration. While undoped films exhibited a single peak, doped films showed two peaks one at low temperatures and another at high temperatures. The low temperature peak, which exhibits a shift towards lower temperatures with increasing dopant concentration, is attributed to the relaxation of the main chain, while the high temperature peak, which shows a tendency to shift towards higher temperatures with dopant concentration, is due to space charge polarization. The TSDCs were higher for low dopant concentrations than their undoped counterparts, while for high concentrations of the dopant, the TSDCs decreased. Formation of charge transfer complexes at low dopant concentrations and molecular aggregates at higher dopant concentrations are suggested as the possible reasons for this behaviour.     

硅外延片中的杂质控制

有5类掺杂源影响硅的外延片中的杂质分布。主掺杂质控制外延层的杂质浓度，决定外延层的电阻率。固态外扩散、气相自掺杂和系统自掺杂影响衬底界面附近的外延层杂质浓度的深度分布。该文介绍了此3类掺杂源的掺杂过程和抑制方法。金属杂质在外延层中对器件有害，防止沾污和使用吸杂技术能降低金属杂质在外延层中的浓度。     

Effect of the Liquid-Phase Characteristic on the Microstructures and Dielectric Properties of Donor- (Niobium) and Acceptor- (Magnesium) Doped Barium Titanate

Changes in the microstructure and dielectric properties with the variation of the donor/acceptor ratio in BaTiO₃ ceramics were investigated. In donor-rich specimens, a liquid that appeared during sintering did not penetrate into grain boundaries. However, in the acceptor-rich specimens, the grains were separated by a liquid film during sintering. The much higher mobility of the liquid film than that of the grain boundaries was suggested to cause extensive grain growth in acceptor-rich BaTiO₃. The macroscopic homogenization of dopants because of grain growth in acceptor-rich specimens resulted in changes in the dielectric properties.     

Microstructure evolution during metal forming processes

Recrystallization and grain growth evolutions during metal forming processes are considered. Coupling between the thermo-mechanical and microstructure processes is realized. Die forging of a rear-axle flange is simulated numerically on the base of the finite element method. Material parameters of the models are obtained experimentally. The influence of interpass and holding times on grain size distributions in the end product is shown.     

Microstructural changes accompanying repair welding in 5xxx aluminium alloys and their effect on the mechanical properties

At the shipyards, the aluminium alloy 5083 is welded with a multi-pass sequence using the metal inert gas technique. If, while checking the weld integrity either after welding or during service, defects are detected in the vicinity of the weldment, repairs are usually employed to extend the service life.

The repair method involves removal of the upper passes, depending on the thickness and re-welding under the same conditions.

Purpose of this paper is to examine the microstructural changes accompanying repair welding, define their effect on properties of primary importance and set, if possible, an upper limit as far as the number of repairs is concerned.     

金属材料中的稀土元素

本文论述了俄罗斯对稀土元素在高强度钢、高温合金、铝合金、镁合金、粉末冶金和磁性材料中的应用及其发展。     

Influence of the deposition atmosphere on the characteristics of Pd–Mg thin films prepared by pulsed laser deposition

Bilayered palladium (30 nm thick)–magnesium (350 nm thick) thin films were prepared using the pulsed laser deposition technique in the presence of various background gases (Ar, He and a mixture He + H₂) under different partial pressures (47 and 27 Pa). According to the deposition atmosphere, the Pd/Mg interface shows either a sharp or an extended transition. The electrochemical hydriding properties and the mechanical stability upon cycling of the Pd/Mg film are greatly improved when an extended «intermixing» zone between the Pd and Mg layers is present. The Pd–Mg films prepared under pure helium fulfill these conditions.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.