ICAP-AES等离子体发射光谱法测定氧化铁粉的杂质元素

介绍了ICP等离子体光谱仪的原理及测定高纯氧化铁中铝、钙、硫、钾、镁、锰、钠和钛等8种杂质元素的分析方法，考察了样品的溶解方案及工作曲线的选择，确定了仪器最佳工作条件和方法检出限。     

复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

Hydrothermal synthesis of hexagonal ZnO clusters

Hydrothermal process was applied to synthesize zinc oxide nanocrystals. X-ray powder diffraction and scanning electron microscopy were used to analyze the crystal structure and surface morphology. XRD pattern analysis showed that the ZnO clusters are single hexagonal phase of wurtzite structure (space group P63 mc) with no impurity of Zn and Zn(OH)₂. Also, SEM images revealed that the size of a single ZnO crystal is between 200-500 nm in diameter and 2-5 μm in length. The influence of potassium iodide (KI) as a surfactant on the crystallinity of ZnO has been investigated.     

The flame retardant mechanism of polyolefins modified with chalk and silicone elastomer

This paper presents the current understanding of the flame retardant mechanism of Casico?. The study includes the flame retardant effect of each individual component: ethylene–acrylate copolymer, chalk and silicone elastomer, as well as the formation of an intumescent structure during heating. The flame retardant properties were investigated by cone calorimetry and oxygen index tests. To obtain insight into the flame retardant mechanism, heat treatment under different conditions has also been performed. The results indicate that the flame retardant mechanism of Casico is complex and is related to a number of reactions, e.g. ester pyrolysis of acrylate groups, formation of carbon dioxide by reaction between carboxylic acid and chalk, ionomer formation and formation of an intumescent structure stabilized by a protecting char. Special emphasis is given to the formation of the intumescent structure and its molecular structure as evaluated from ¹³C MAS‐NMR and ²⁹Si MAS‐NMR, ESCA and XRD analysis. After treatment at 500°C the intumescent structure consists mainly of silicon oxides and calcium carbonate and after treatment at 1000°C the intumescent structure consists of calcium silicate, calcium oxide and calcium hydroxide. Copyright © 2003 John Wiley & Sons, Ltd.     

Rutile-type TiO2 thin film for high-k gate insulator

We investigated rutile-type titanium dioxide (TiO₂) films for possible use as a high-k gate insulator. The TiO₂ thin films were directly deposited on Si substrates using a RF magnetron sputtering method with a sintered oxide target. A single phase of rutile-type TiO₂ whose dielectric constant of approximately 75 was obtained when the film was deposited in an inert gas atmosphere and annealed at 800 °C in an oxidizing gas atmosphere. The oxygen ions were deficient in the as-deposited film, and consequently, a sufficient oxygen supply was needed to crystallize the film to a single phase of rutile during the post-annealing. However, the interfacial SiO₂ layer between the TiO₂ and the Si substrate simultaneously grew thicker than 2 nm. As the interfacial SiO₂ grew, the leakage current was decreased and the equivalent oxide thickness was increased, in the Au/rutile-type TiO₂/Si capacitor. Therefore, we concluded that the growth of the interfacial SiO₂ layer thicker than 2 nm is inevitable to form the single phase of rutile-type TiO₂ and to decrease the leakage.     

高性能片式多层氧化锌压敏电阻器材料研究

对非Bi系氧化锌压敏电阻材料进行了系统研究。研究结果表明:在ZnO基体材料中,添加适量PbO、Co2O3、Cr2O3、MnO2、ZrO2、TiO2、Sb2O3 、B2O3等非Bi系添加剂,采用传统陶瓷制备工艺和合适烧结工艺,可获得a >50、IL<1 mA、烧结温度低于1 100℃的实用非Bi系氧化锌电阻瓷料。采用该瓷料,利用MLC工艺,选用Pd30/Ag70电极浆料,制作出V1mA<30 V、a >30、IL<1 mA的片式多层压敏电阻器。