GaAs外延薄膜的As缺位研究

研制太赫兹量子级联激光器的核心是制备以GaAs为代表的量子阱超晶格,在制备GaAs为代表的量子阱超晶格过程中,需要解决As缺位等基础性物理问题。采用激光分子束外延技术制备了GaAs外延薄膜,研究了实验参数对GaAs薄膜性能,特别是As缺位的影响。在线RHEED测试结果表明,GaAs可以实现外延生长。原位XPS和UPS等测试研究结果表明,激光分子束外延技术制备GaAs外延薄膜过程中存在As缺位问题,激光能量对GaAs薄膜中As含量具有明显的影响,要获得理想成分比的GaAs外延薄膜,需要较高的脉冲激光能量(600 mJ)。     

Ruthenium complex-cored dendrimers: Shedding light on efficiency trade-offs in dye-sensitised solar cells

A series of first generation dendrimers provide important insight into the performance of dye-sensitised solar cells (DSSCs). The dendrimers are comprised of a substituted [cis-di(thiocyanato)-bis(2,2′-bipyridyl)ruthenium(II) complex, first generation biphenyl-based dendrons, and either four, eight, or twelve 2-ethylhexyloxy surface groups. The dendrimers were bound to the titanium dioxide of the DSSCs via carboxylate groups on one of the bipyridyl moieties in a similar manner to the ‘gold standard’ [cis-di(thiocyanato)-bis(4,4′-dicarboxylate-2,2′-bipyridyl)]ruthenium(II) 1 (N3). Exchanging one pair of the carboxylate groups on one bipyridyl ligand of N3 with styryl units to give [cis-di(thiocyanato)-(4,4′-dicarboxylate-2,2′-bipyridyl)-(4,4′-distyryl-2,2′-bipyridyl]ruthenium(II) 2 resulted in an improvement in device performance (7.19% ± 0.11% for 2 versus 6.94% ± 0.12% for N3). Devices containing the dendrimers also had good efficiencies but the performance was found to decrease with the increasing number of surface groups, which gives rise to an increase in the molecular volume of the dye. The device containing the dendrimer with four surface groups, 3, had a global efficiency of 6.32% ± 0.13%, which was comparable to N3 (6.94% ± 0.12%) in the same device configuration. In contrast, the dendrimer with twelve surface groups, 5, had an efficiency of 3.69% ± 0.19%. Complex 2 and all three dendrimers have the same core chromophore, which absorbs more light than N3. The decrease in efficiency with increasing molecular volume was therefore determined to be due to less dye being adsorbed. Hence molecular volume and molar extinction coefficient are both first order parameters in achieving high conversion efficiencies and must be taken into account when designing new dyes for DSSCs.     

洁净室气态分子污染物的监测技术

随着微电子工业工序复杂性的增加和产品尺寸的不断缩小,气态分子污染物(AMC)对产品的影响成为洁净室环境控制中重点关注的问题。文章介绍了洁净室中AMC的定义,重点阐述了AMC的监测技术。     

Doping Molecular Monolayers: Effects on Electrical Transport Through Alkyl Chains on Silicon

n‐Si/C_nH_{2n + 1}/Hg junctions (n = 12, 14, 16 and 18) can be prepared with sufficient quality to assure that the transport characteristics are not anymore dominated by defects in the molecular monolayers. With such organic monolayers we can, using electron, UV and X‐ray irradiation, alter the charge transport through the molecular junctions on n‐ as well as on p‐type Si. Remarkably, the quality of the self‐assembled molecular monolayers following irradiation remains sufficiently high to provide the same very good protection of Si from oxidation in ambient atmosphere as provided by the pristine films. Combining spectroscopic (UV photoemission spectroscopy (UPS), X‐ray photoelectron spectroscopy (XPS), Auger, near edge‐X‐ray absorption fine structure (NEXAFS)) and electrical transport measurements, we show that irradiation induces defects in the alkyl films, most likely C?C bonds and C? C crosslinks, and that the density of defects can be controlled by irradiation dose. These altered intra‐ and intermolecular bonds introduce new electronic states in the highest occupied molecular orbital (HOMO)–lowest unoccupied molecular orbital (LUMO) gap of the alkyl chains and, in the process, dope the organic film. We demonstrate an enhancement of 1–2 orders of magnitude in current. This change is clearly distinguishable from the previous observed difference between transport through high quality and defective monolayers. A detailed analysis of the electrical transport at different temperatures shows that the dopants modify the transport mechanism from tunnelling to hopping. This study suggests a way to extend significantly the use of monolayers in molecular electronics.     

Diindenoperylene derivatives: A model to investigate the path from molecular structure via morphology to solar cell performance

Efficient organic electronic devices require a detailed understanding of the relation between molecular structure, thin film growth, and device performance, which is only partially understood at present. Here, we show that small changes in molecular structure of a donor absorber material lead to significant changes in the intermolecular arrangement within organic solar cells. For this purpose, phenyl rings and propyl side chains are fused to the diindenoperylene (DIP) molecule. Grazing incidence X-ray diffraction and variable angle spectroscopic ellipsometry turned out to be a powerful combination to gain detailed information about the thin film growth. Planar and bulk heterojunction solar cells with C60 as acceptor and the DIP derivatives as donor are fabricated to investigate the influence of film morphology on the device performance. Due to its planar structure, DIP is found to be highly crystalline in pristine and DIP:C60 blend films while its derivatives grow liquid-like crystalline. This indicates that the molecular arrangement is strongly disturbed by the steric hindrance induced by the phenyl rings. The high fill factor (FF) of more than 75% in planar heterojunction solar cells of the DIP derivatives indicates excellent charge transport in the pristine liquid-like crystalline absorber layers. However, bulk heterojunctions of these materials surprisingly result in a low FF of only 54% caused by a weak phase separation and thus poor charge carrier percolation paths due to the lower ordered thin film growth. In contrast, crystalline DIP:C60 heterojunctions lead to high FF of up to 65% as the crystalline growth induces better percolation for the charge carriers. However, the major drawback of this crystalline growth mode is the nearly upright standing orientation of the DIP molecules in both pristine and blend films. This arrangement results in low absorption and thus a photocurrent which is significantly lower than in the DIP derivative devices, where the liquid-like crystalline growth leads to a more horizontal molecular alignment. Our results underline the complexity of the molecular structure-device performance relation in organic semiconductor devices.     

InGaAs and Ge MOSFETs with high κ dielectrics

InGaAs and Ge MOSFETs with high κ’s are now the leading candidates for technology beyond the 15 nm node CMOS. The UHV-Al₂O₃/Ga₂O₃(Gd₂O₃) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities of states (D_it’s) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850 °C, a CET of 2.1 nm (a CET of 0.6 nm in GGO), and a well tuning of threshold voltage V_th with metal work function. Device performances in drain currents of >1 mA/μm, transconductances of >710 μS/μm, and peak mobility of 1600 cm²/V s at 1 μm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV-Al₂O₃/GGO gate dielectrics and ALD-Al₂O₃. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800 μA/μm and peak transconductance of 420 μS/μm at 1 μm gate-length.     

Chemisorption sensing and analysis using silicon cantilever sensor based on n-type metal-oxide-semiconductor transistor

This paper presents a silicon cantilever sensor based on n-type metal-oxide-semiconductor transistor for chemical sensing and analysis using the chemisorption-induced surface stress sensing principle. The cantilever is along the 〈1 0 0〉 crystal orientation of the (1 0 0) silicon, and the transistor channel is parallel to as well as located at the rear part of the cantilever to obtain high stress sensitivity. The gold film deposited on the bottom surfaces of cantilevers is chemically functionalized with a self-assembled monolayer of 4-mercaptobenzoic acid via the Au-SH covalent bonding. The vapor phase chemical sensing experiments with acetone, ethanol, nitroethane and water vapor as targets are performed. The observed response differentiation implies that the molecular interaction mechanisms between different chemical molecules are different.     

DNA数据存储

分子数据存储作为一种稳定性强、存储密度高的数据存储方式,表现出巨大的潜力。它有望解决当今日益增长的巨大信息量与存储能力之间差距不断扩大的问题。作为一种典型的分子数据存储方式,DNA数据存储可以作为一种替代性、变革性的存储介质,用于突破现用存储方式的物理极限,满足不断增加的数据存储需求。该综述将对DNA数据存储的历史、工作流程、及当前的发展状态进行概述,同时讨论现今DNA数据存储存在的问题、挑战及发展趋势。     

Star-shaped hexaaryltriindoles small molecules: Tuning molecular properties towards solution processed organic light emitting devices

We present a series of differently substituted star-shaped hexaaryltriindoles with tunable light-emitting properties. The deep blue emission is unchanged by donor peripheral substituents while an increasing acceptor character produces a reduction of the optical gap, an increased Stokes shift and eventually leads to the appearance of a new electronic level and to the simultaneous deep blue (413 nm) and green (552 nm) emission in solution. Quenching by concentration increases with the acceptor character but is lower as the tendency of these compounds to aggregate is stronger. Solution processed thin films present optical and morphological qualities adequate for device fabrication and similar electronic structure compared to solutions with an emission range from 423 nm up to 657 nm (red), demonstrating the possibility of tuning the energy levels by chemical functionalization. We have fabricated and characterized single-layer solution processed organic light emitting diodes (OLED) to investigate the influence on transport and emission properties of the substituting species. We analyzed the I–V response using a single-carrier numerical model that includes injection barriers and non-uniform electric-field across the layer. As a result, we obtained the electric field dependence of the mobility for each device. Best results are obtained on the most electron rich derivative functionalized with six donor methoxy groups. This material shows the highest emission efficiency in solid state, due to aggregation-induced enhancement, and better transport properties with the highest mobility and a very low turn-on voltage of 2.8 V. The solution processed OLED devices produce stable deep blue (CIE coordinates (0.16, 0.16)) to white (CIE coordinates (0.33, 0.3)) emission with similar luminous efficiencies.