不同分子量聚乙烯吡咯烷酮对四氢呋喃水合物形成及生长的影响

聚乙烯吡咯烷酮(以下简称PVP)作为一种抑制能力较强、应用较成熟的水合物动力学抑制剂(以下简称KHIs),一直是国内外学者关注和研究的焦点,但对于不同分子量PVP对水合物形成的影响情况还存在着争议。为此,在常压、变温条件下进行了四氢呋喃(以下简称THF)水合物形成模拟实验,研究了相同加量条件下、不同分子量的PVP对THF水合物形成及生长的影响,并从宏观现象、介观结构和微观机制3个层面对影响机理进行了分析和探讨。结果表明:(1)对于THF水合物的形成,PVP的抑制能力随分子量的增大逐渐增强;(2)对于THF水合物的生长,PVP分子量介于8 000~58 000时,抑制效果较接近且相对较弱,但抑制作用稳定,PVP分子量介于270 000~1 500 000时,在THF水合物生长初始阶段PVP的抑制效果较好,但整个实验过程THF水合物形成的平均速率相对较快,且PVP分子量越大这一现象越明显;(3)PVP的存在增强了THF水合物聚集体的聚集强度。结论认为,该研究成果对于KHIs的研发和实际应用均具有较重要的参考价值。     

Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates

This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision Systems. We report a very high-quality HgCdTe growth, for the first time, on an 8 cm × 8 cm CdZnTe substrate. This paper also describes the excellent HgCdTe growth repeatability on multiple 7 cm × 7 cm CdZnTe substrates. In order to study the percentage wafer area yield and its consistency from run to run, small lots of dual-band long-wave infrared/long-wave infrared triple-layer heterojunction (TLHJ) layers on 5 cm × 5 cm CdZnTe substrates and single-color double-layer heterojunction (DLHJ) layers on 6-inch Si substrates were grown and tested for cutoff wavelength uniformity and micro- and macrovoid defect density and uniformity. The results show that the entire lot of 12 DLHJ-HgCdTe layers on 6-inch Si wafers meet the testing criterion of cutoff wavelength within the range 4.76 ± 0.1 μm at 130 K and micro- and macrovoid defect density of ≤50 cm⁻² and 5 cm⁻², respectively. Likewise, five out of six dual-band TLHJ-HgCdTe layers on 5 cm × 5 cm CdZnTe substrates meet the testing criterion of cutoff wavelength within the range 6.3 ± 0.1 μm at 300 K and micro- and macrovoid defect density of ≤2000 cm⁻² and 500 cm⁻², respectively, on the entire wafer area. Overall we have found that scaling our HgCdTe MBE process to a 10-inch MBE system has provided significant benefits in terms of both wafer uniformity and quality.     

Tilted superlattice composition profile determined by photoluminescence and thermal disordering

The composition profile of an (AlAs)_1/2(GaAs)_1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the energy of the direct band gap photoluminescence peak is measured as a function of increasing layer interdiffusion. The shift in the photoluminescence peak energy after completely disordering the tilted superlattice is 39 meV. A theoretical model is used to simulate the change in band gap as a function of layer interdiffusion for several composition profiles. The profile that gives the best fit to the experimental data is chosen. The tilted superlattice composition profile is found to be sinusoidal, varying from Al_0.40Ga_0.60As to Al_0.60Ga_0.40As.     

分子束外延生长Al_xGa_(1-x)As/GaAs超晶格及结构、光学特性研究

报道了分子束外延生长80个周期的Al_xGa_(1-x)As/GaAs超晶格,X射线衍射和透射电镜的结果表明超晶格样品有良好的结构特性,光反射光谱观察到阱内的电子跃迁过程,其结果与理论计算相符。     

Genetic diversity by AFLP analysis within Jatropha curcas L. populations in the State of São Paulo,Brazil

The genetic diversity of 5 populations of Jatropha curcas L. (Euphorbiaceae), a species cultivated in tropical countries and used in biodiesel production, was analyzed by amplified fragment length polymorphism (AFLP). Plants from distinct populations found in the State of São Paulo, Brazil, had their genetic diversity characterized by using three primer combinations. The number of polymorphic bands obtained reached 184 and the base pair length of bands ranged from 75 to 350, with average PIC values of 0.418. Accessions from the Aguas de Santa Barbara population presented the highest percentage of polymorphic loci (89.76%), followed by the populations of Catanduva (84.24%), Jales (80.98%), Jurucê (78.80%) and Taquaritinga (70.65%). Plants collected from the populations of Taquaritinga and Jales presented the smallest and highest genetic diversities, respectively, measured by using both Nei's genetic variability index (h = 0.2242 and 0.2973) and Shannon's index (I = 0.3359 and 0.4319). The results obtained indicated that 73.1% of genetic variability corresponds to intrapopulational variation and 26.8% to variation among populations. The clustering dendrogram using Jacquard showed four clusters. Three clusters with low genetic diversity grouped most of individuals collected in distinct regions (63.3% JU, 47.0% JA and 82.5% TA) and the fourth with the higher genetic diversity was composed with basically individuals collected in CA and AS, but it also had samples collected in JU, JA and TA, where it is possible to select individuals to be included in breeding programs.     

PP71喷油器壳体合件的焊接工艺研究

介绍了P型喷油器的工作原理以及喷油器壳体的结构及作用,针对PP71喷油器壳体的结构,从焊接原理及试验结果方面,分析了摩擦焊接、火焰焊接、感应钎焊3种焊接工艺的特点,重点介绍了PP71喷油器壳体采用感应加热钎焊的工艺方法及应注意的事项。     

Optical quality GaInAs grown by molecular beam epitaxy

Ga₄₇In₅₃As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 10¹⁵cm^-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.     

溶液缩聚物分子量分布及其控制的研究

本文根据溶液缩聚基本原理及反应过程的基本事实，用随机过程方法，得到缩聚产物分子量分布函数，并对分子量及其分布的控制作了讨论。     

聚砜酰胺的分子量对其超滤膜性能的影响——Ⅱ.膜性能与成膜机理

研究了PSA的分子量对其超滤膜性能的影响,发现PSA分子量高,膜孔径大、分布宽;分子量低,膜孔径小、分布窄;但分子量过低,孔径变大,且分布宽。并就分子量对PSA超滤膜的透水率、截留率、压实性能,以及制膜液的相分离等性能进行比较,讨论成膜机理,改进了的成膜机理较好地解释了实验结果。