Excess Heat Capacity in NTD Ge Thermistors

Neutron Transmutation Doped (NTD) germanium thermistors, cut from metallized wafers, are useful in bolometry. The rise time of a bolometer depends on its heat capacity. We report measurements on the heat capacity of two NTD Ge wafers down to 24 mK temperatures. Both wafers were neutron irradiated and annealed, one of them had in addition undergone a boron implantation and metallization process. For the non-metallized wafer we found a Sommerfeld constant γ = 7.52·10⁻⁷ J K⁻² cm⁻³. A comparison between the two wafers showed an excess heat capacity in the metallized wafer. For example, at 24 mK temperature, the specific heat of the metallized afer is more than twice the value of the non-metallized one.     

Potential applications of negative tone development in advanced lithography

Advanced lithography requires resolution enhancement techniques (customized illumination mode, litho friendly design), and alternative process flow schemes (double exposure, double patterning) in order to meet the requirements of the ITRS technology roadmap and to extend the applications of a full-field scanner with a 1.35 numerical aperture (NA) that represents the physical limit of water-based immersion ArF lithography.Today, one of the most interesting alternative processes uses the patterning inversion through a negative tone development (NTD) process step. Traditionally, the patterning (contacts or trenches) is done by using a dark field mask in combination with positive tone resist and positive tone development (PTD). By using a solvent-based developer (NTD) and a bright field mask, the same features can be transferred into a positive resist with the benefit of better image contrast and, consequently, better line width roughness (LWR) and resolution.In this work we have explored the potential applications of NTD for trenches and contact holes for the 45 nm technology node requirements and beyond. The NTD process is a promising option considering the impact on process window, LWR, CD uniformity and defectivity. The experimental result of this alternative approach to print critical dark field levels in an advanced lithography boundary has been explored.     

Characterization of SARS-CoV-2 Escape Mutants to a Pair of Neutralizing Antibodies Targeting the RBD and the NTD

Mutations in the spike protein of SARS-CoV-2 can lead to evasion from neutralizing antibodies and affect the efficacy of passive and active immunization strategies. Immunization of mice harboring an entire set of human immunoglobulin variable region gene segments allowed to identify nine neutralizing monoclonal antibodies, which either belong to a cluster of clonally related RBD or NTD binding antibodies. To better understand the genetic barrier to emergence of SARS-CoV-2 variants resistant to these antibodies, escape mutants were selected in cell culture to one antibody from each cluster and a combination of the two antibodies. Three independently derived escape mutants to the RBD antibody harbored mutations in the RBD at the position T478 or S477. These mutations impaired the binding of the RBD antibodies to the spike protein and conferred resistance in a pseudotype neutralization assay. Although the binding of the NTD cluster antibodies were not affected by the RBD mutations, the RBD mutations also reduced the neutralization efficacy of the NTD cluster antibodies. The mutations found in the escape variants to the NTD antibody conferred resistance to the NTD, but not to the RBD cluster antibodies. A variant resistant to both antibodies was more difficult to select and only emerged after longer passages and higher inoculation volumes. VOC carrying the same mutations as the ones identified in the escape variants were also resistant to neutralization. This study further underlines the rapid emergence of escape mutants to neutralizing monoclonal antibodies in cell culture and indicates the need for thorough investigation of escape mutations to select the most potent combination of monoclonal antibodies for clinical use.