用AIR-C2H2原子吸收光谱法测定镉镍电池正极浸渍液中钴含量

本文主要简述与运用AIR-C2H2原子吸收光谱法进行镉镍电池正极浸渍液中钴含量的测定，介绍了钴最佳测定条件及呈良好线性范围的浓度。同时对样品消化处理条件，在测定中样品的干扰因素进行了综合考虑，该方法具有很好的灵敏度，很好的重复性，干扰小，同时具有方法步骤简单，操作容易掌握等特点，对样品钴含量的测定，其相对标准偏差均小于1.0%（n=6），标准加入回收率均在97.0%～102.0%(n=5）范围内，结果表明，运用AIR-C2H2原子吸收光谱法测定镉镍电池正极浸渍液中钴含量的分析，达到了实验室分析质量控制的要求，完全适用于镉镍电池正极浸渍液中钴含量的控制分析和样品系统分析。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

湿H2S环境中金属材料腐蚀的研究

介绍了在湿H2S环境中金属材料的腐蚀试验标准、方法和手段并重点强调了在H2S试验过程中常遇到的一些问题的处理方法.最后,指出了应加强H2S腐蚀的基础性和系统性研究的研究方向.     

微波等离子体化学气相沉积的 a-Si∶H 性能研究

本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10~(-3)到10~(-11)((?)cm)~(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%.     

熔敷金属扩散氢逸出特性研究

采用酒精法测量扩散氢 ,研究了焊条熔敷金属扩散氢含量以及在测氢过程中扩散氢逸出量与逸出时间的关系 (逸出特性 )。研究结果表明 ,熔敷金属扩散氢逸出特性受扩散氢含量、焊道数、熔敷金属化学成分和表面状态等多种因素的影响。熔敷金属扩散氢 (HDo)可以分为快速逸出扩散氢 (HDq)和慢速逸出扩散氢(HDs)两部分     

一种新型背面接触式H~+-ISFET

简要地介绍了氢离子敏场效应晶体管(H~+-ISFET)的基本结构和工作原理,提出了一种新型背面接触式H~+-ISFET。对该结构在版图、工艺设计中的有关问题,进行了探讨。最后指出:它在pH值的测量中有较好的实用价值。     

基于BCM3540的高清晰度数字电视机顶盒的硬件设计

介绍一种基于BCM3540的高清晰度数字电视机顶盒的硬件设计方案,该方案采用1块主芯片BCM3540及1块协处理器BCM7411,能够处理MPEG-2高清、标清以及H.264高清、标清信号,可以直接支持PCMCIA接口实现机卡分离,并具有32位PCI总线,可以很方便地进行功能扩展。     

Synthesis and structural characterization of methacrylic acid/octadecyl acrylate‐graft‐poly(methylhydrosiloxane) by hydrosilylation

Methylmethacrylate (MMA) and octadecyl acrylate (OA) were grafted to poly(methylhydrosiloxane) (PMHS) by hydrosilylation, respectively, with hexachloroplatinic acid as catalyst, and the former was further hydrolyzed to prepare methacrylic acid (MAA)‐graft‐PMHS under the alkaline condition. Through orthogonal experiment, main factors affecting the graft reaction between OA and PMHS were discussed and arranged in a decreasing order according to their abilities of the effect on the hydrosilylation of OA with PMHS: catalyst dosage, reaction temperature, reaction time, material ratio, and solvent dosage. It was found that the hydrosilylation of OA with PMHS was easier to that of MMA with PMHS. Under optimal conditions, the grafting ratios of MMA with PMHS and OA with PMHS reached about 90 and 95%, respectively. FTIR and ¹H NMR spectra indicated that the hydrosilylation reactions followed the Markovnikov's rule and played a strong preference toward β‐1,2‐addition. The test of contact angle indicated that surface energy of a system was mainly dependent on the polar groups. The surface energy of OA‐graft‐PMHS (35.07 mN/m) was similar to those of PMHS (35.62 mN/m) and polyoctadecyl acrylate (36.57 mN/m), and lower than that of MAA‐graft‐PMHS (43.50 mN/m). © 2007 Wiley Periodicals, Inc. J Appl Polym Sci 2008     

Synthesis and characterization of polyaniline films using Fenton reagent

The chemical oxidation of aniline to form polyaniline (PANI) films and powder samples was made using Fenton reagent as an oxidizing agent in aqueous sulfuric acid medium. The PANI films were monitored by using the quartz crystal microbalance and the electronic absorption techniques. The optimum concentration was determined and the results were justified by measuring the UV–vis absorption spectra for the in situ PANI films. The conductivity for the PANI films and powder samples, prepared in different conditions, was measured. Also, the IR spectra, X‐ray and the thermogravimetric analysis for the PANI powder formed in the bulk were measured and compared with the polymer prepared using ammonium peroxydisulfate. A preliminary investigation to the dielectric properties of the polymer powder was measured and discussed. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

Harold H. Kelley (1921-2003).

This obituary reports the death of Harold Harding Kelley, Professor Emeritus of Psychology at University of California (1921-2003). (PsycINFO Database Record (c) 2010 APA, all rights reserved)