氧化物纤维/氧化物陶瓷基复合材料研究概述

氧化物纤维，氧化物陶瓷基复合材料可以在高温氧化环境下长时间工作，是最有发展潜力的高温结构陶瓷材料之一。决定氧化物纤维，氧化物陶瓷基复合材料性能最主要的2个因素是氧化物纤维的性能和界面材料的组成与结构。笔者介绍了氧化物纤维和界面材料的发展，以及界面材料涂覆方法，并探讨了氧化物纤维，氧化物陶瓷基复合材料的发展趋势。     

Novel one-step formed composite reinforcement of "Spider web like" SiCnw networks and "Z-pins like" SiC rods for ablation resistance improvement of C/C-ZrC-SiC

A novel composite reinforcement with horizontal multilayer "Spider web like" SiC nanowire networks and vertical interconnected "Z-pins like" SiC rods was designed and prepared by facile one-step figuration. The linear ablation rate of "Spider web like" SiC nanowire networks and "Z-pins like" SiC rods collectively reinforced C/C-ZrC-SiC composites at 2610 ± 20 ℃ was 0.4 ± 0.03 μm/s with a 74.19 % reduction. The improved ablation resistance was attributed to a denser gradient oxide layer composed of central ZrO₂ layer, transitional ZrO₂-SiO₂ layer and marginal SiO₂ layer generated under the initial sticky net effect from SiCnw networks and subsequent oxide compensation from "Z-pins like" SiC rods.     

水热合成法制备纳米TiO2晶须的表征及工艺研究

本文以TiCl4为原料，采用水热合成法制备金红石型纳米TiO2晶须，通过TEM和XRD对所制备的纳米TiO2晶须进行表征，确定了主要工艺参数。     

有机玻璃的增韧研究

研究了不同聚合方法制备的聚丙烯酸丁酯（PBA）对浇铸型有机玻璃（PMMA）的增韧改性，研究结果表明，当PBA以纳米粒子簇分散在PMMA基体中时，对PMMA有较好的增韧改性效果。当PMMA中无皂乳液聚合PBA（e-PBA)的质量分数为0.5%时。改性PMMA的冲击强度比基体提高38%。SEM观察表明，本体聚合PBA（b-PBA)橡胶粒子以独特的纳米簇状结构均匀分布在PMMA基体中，大量的微裂纹以b-PBA粒子为中心呈放射状向外辐射，这些微裂纹在试样破坏的过程中吸收了大量的冲击能，使改性PMMA韧性得以提高。     

超细氧化锑阻燃剂的研究进展

综述了氧化锑阻燃剂的超细化、表面处理、复合功能化方面的发展方向和研究热点。     

纳米CeO2的制备方法研究进展

介绍了近年来纳米CeO2的制备方法的研究进展情况，重点分析对比了沉淀法、溶胶—凝胶法、水热法、微乳液法、喷雾热分解法、喷雾反应法等制备纳米CeO2的优缺点，指出了在今后应重点研究和解决的主要问题。     

PPO/PA合金的研制

比较了三条技术路线、PPO／PA质量比、各种抗冲击剂对PPO／PA合金性能的影响。应用FTIR．Molau实验、DSC曲线证实了改性反应原理及增容作用。结果表明：在双螺杆挤出机中，聚苯醚(PPO)与马来酸酐(MAH)接枝反应，然后与聚酰胺(PA66)、SEBS挤出共混，制成的PPO／PA合金，抗冲击性能高。     

Effect of calcination temperature on the characteristics of SO<Emphasis Type="Italic">sk</Emphasis>4/2-/TiO<Subscript>2</Subscript> catalysts for the reduction of NO by NH<Subscript>3</Subscript>

The catalytic activity of sulfated titania (ST) calcined at a variety of temperatures has been investigated for selective catalytic reduction (SCR) of NO by NH₃. The NO removal activity of ST catalyst mainly depends on its sulfur content, indicating critical role of sulfur species on the surface of TiO₂. The role of sulfur is mainly the formation of acid sites on the catalyst surface. The presence of both BrØnsted and Lewis acid sites on the surface of sulfated titania has been identified by IR study with the adsorption of NH₃ and pyridine on ST. The reduction of the intensity of IR bands representing BrØsted acid sites is more pronounced than that revealing Lewis acid sites as the calcination temperature increases. It has been further clarified by IR study of ST500 catalyst evacuated at a variety of temperatures. The NO removal activity also decreases with the increase of the catalyst calcination temperature. It simply reveals that BrØnsted acid sites induced by sulfate on the catalyst surface are primarily responsible for the enhancement of catalytic activity of ST catalyst containing sulfur for NO reduction by NH₃.     

酚酞聚芳醚酮（PEK－C）填充料的研究

本文筛选出几种特定的酸性金属氧化物填料，研究了其粒度及粒子形状对ＰＥＫ－Ｃ的复合化效果和填充后的ＰＥＫ－Ｃ体系的力学性能、加工性能和结构形态。结果表明，ＴｉＯ２、Ｃｒ２Ｏ３、Ａ１２Ｏ３及ＭｏＳ２等与ＰＥＫ－Ｃ具有良好的亲合性，对ＰＥＫ－Ｃ起到了明显地增量、补强作用。在保持ＰＥＫ－Ｃ树脂的基本物理性能前提下，可降低注射用ＰＥＫ－Ｃ专用料的价格。     

Oxide formation during etching of gallium arsenide

Characterisation of n-type GaAs, etched in a 5:1:1 mixture of H₂SO₄:H₂O₂:H₂O, was performed using X-ray photoelectron spectroscopy (XPS) and electrochemical AC impedance. Quantitative XPS analysis of GaAs indicated that the as-received wafers had a gallium-rich native oxide which was not affected by solvent degreasing treatments. Subsequent, oxidative etching formed a thinner arsenic-rich oxide. It is suggested that etching causes initial thinning of the native oxide; subsequently, transport of Ga and As ions occurs through the film by high-field ionic conduction. Arsenic enrichment in the resultant oxide film arises from the greater mobility of Ga³⁺ ions compared with As³⁺ ions as well as the relative solubility of Ga₂O₃ compared with As₂O₃. The as-received oxide film thickness, determined from the ratio of the oxide to substrate XPS peaks, was approximately 1.1 nm. After etching this was reduced to about 0.7 nm. This thickness is consistent with the driving voltage for oxide formation being provided by the electrochemical potential difference between hydrogen peroxide and the GaAs wafer (i.e. between 0.4 V, for As, and 1.2 V, for Ga, at a nm V⁻¹ ratio of 2). Capacitance measurements, derived from electrochemical impedance data, combined with film thickness data, gave a value of about 5 for the dielectric constant of As₂O₃.