压电作动器在微力微位移装置中的应用

在微力微位移装置中采用闭环控制压电作动器实现微位移进给和微力加载，设计了加载机构，建立加载机构的压电作动器输入电压、加载装置输位移和输出力之间的关系。通过电容测位移仪检测输出位移，实验得到加载系统刚度，根据压电作动器输入电压、加载装置刚度，计算出加载力大小。该方法为微机械力学性能测试仪打下了基础。     

PZT基陶瓷铁电－反铁电相界处各向异性的研究

本文研究了两个以ＰＺＴ瓷为基的系统：ＰＺＴ（Ｎｂ）和ＰＳＺＴ陶瓷在铁电－反铁电相界区域的压电和机电耦合等性能．结果表明，ＰＺＴ基陶瓷在该相界处具有高Ｋｔ和低Ｋｐ的性质．压电和机电耦合各向异性也比准同型相界要高，｜ｄ３３／ｄ３１｜＞５．５，Ｋｔ／Ｋｐ＞３．０．借助于电场诱导ＡＦ—Ｆ相变和反铁电双子晶格间的强耦合作用，对此现象作了较好解释．     

PZT纳米晶薄膜的Sol—Gel法制备及铁电性质

采用Ｓｏｌ－Ｇｅｌ法，以Ｚｒ的硝酸盐替代醇盐，引入ＰｂＴｉＯ３过渡层的方法成功的制备了纳米晶铁电薄膜。并进行了差热、热重、结构、组分、铁电性能的测定、分析。     

一种埋入型PZT的三维等效机电阻抗模型——第二部分:应用

基于建立的三维等效机电阻抗模型,文献的第一部分得到了PZT与结构耦合的电导纳方程。第二部分根据这一方程提出了应用机电阻抗(EMI)技术监测结构固有属性的改进方法。该方法通过PZT与结构耦合的电导纳方程,从实测的耦合电导纳信号中提取出结构等效机械导纳。利用获得的结构机械导纳曲线,来监测结构固有属性。基于该方法,对埋入有PZT传感器的早龄期混凝土梁的固有属性进行了监测。试验结果表明,利用结构机械导纳来监测结构固有属性是可行的,比原始电信号更加敏感有效。     

Metallic Glass as a Mechanical Material for Microscanners

Microelectromechanical system (MEMS) actuators essentially have movable silicon structures where the mechanical motion can be activated electronically. The microscanner is one of the most successfully commercialized MEMS devices which are widely used for collecting optical information, manipulating light, and displaying images. While silicon is abundant, it is also brittle and stiff and when microprocessed, defects are not uncommon. These defects result in weakness under torsional stress and this has been the key factor limiting the scanning performance of the microscanner. Here a metallic glass (MG)‐based microscanner is reported with MG as the material for the moving torsion bars. The low elastic modulus, high fracture toughness, and high strength of MG offers, for the first time, an ultralarge rotating angle of 146° with power consumption lowered to the microwatt range, and a smaller driving force and better actuation performance, than conventional single crystal silicon and polycrystalline silicon. The high spatial resolution and large scanning field of the MG‐based microscanner are demonstrated in the tomographic imaging of a human finger. This development of an MG‐based MEMS possibly opens a new field of low‐powered MEMS devices with extreme actuation and enhanced sensing.     

烧结温度对0.9PbZr0.52Ti0.48O3-0.1NaNbO3压电陶瓷结构及电学性能的影响

采用传统固相烧结法制备了钠过量的0.9PbZr0.52Ti0.48O3-0.1NaNbO3(PZT-NN)压电陶瓷,研究了烧结温度对PZT-NN陶瓷晶体结构及其电学性能的影响。XRD结果表明,不同温度烧结的PZT-NN陶瓷均为单一钙钛矿结构,在1125~1150℃温区烧结时,陶瓷发生了由四方相向正交相的相变。随烧结温度进一步升高,压电常数d33、介电常数εr以及剩余极化强度Pr均呈递减趋势,烧结温度为1125℃的PZT-NN陶瓷具有较好的电学性能:d33=218pC/N,εr=851,tanδ=0.02。PZT-NN陶瓷的相对密度随烧结温度的升高而增大,在1150℃时达到95%,钠过量的NaNbO3加入使PZT陶瓷的致密化烧结温度降低了50~150℃。     

空间激光通信精跟踪单元的高精度快速PZT驱动技术研究

为保证空间激光通信的顺利进行,精跟踪系统执行机构驱动器设计至关重要.在分析压电陶瓷自身特性的基础上,研制一种基于PA93的高压、大电流、高速率的新型压电陶瓷驱动电源,并对所设计的驱动电源的输出电压稳定性、范围、线性度、静态纹波,带宽等各项性能指标进行测试,得以验证该驱动电源的性能满足了整个精跟踪系统的跟踪精度保持在3μrad左右的前提条件.     

Experimental investigation on the effect of top electrode diameter in PZT thick films

We report the effect of top electrode diameter size in aerosol deposited Pb(Zr_0.52Ti_0.48)O₃ thick films (~ 10 μm-thick) with Pt top and bottom electrode. Dielectric and ferroelectric results showed that top electrode diameter of 0.5-1 mm provides reasonable performance with 1 mm being the most suitable dimension in wide range of AC electric field and frequency. The results were discussed based on the surface microstructure and Debye relaxation. The dielectric analysis showed that the properties variation was mainly due to average grain size and defect density. Debye relaxation modeling exhibited that the result is because of materials characteristic not measurement artifact. We believe the results of this study will find immediate application in design of aerosol deposition process.     

MgO缓冲层对PZT/AlGaN/GaN异质结构电学性能的影响

采用脉冲激光沉积(PLD)技术,以MgO作为缓冲层,在AlGaN/GaN半导体异质结构上沉积了Pb(Zr0.52T0.48) O3 (PZT)铁电薄膜,从而形成金属-铁电-介质-半导体结构(MFIS).XRD扫描结果表明,通过MgO缓冲层对界面结构的优化,实现了PZT薄膜沿(111)面择优取向生长.电流-电压(I-V ...