太阳能热风发电技术研究进展

介绍了太阳能热风发电的产生背景、技术原理和特点。太阳能热风发电能够实现由太阳能到空气动能,最终到电能的转变,具有环保无污染、运行维护简单、缓解常规能源消耗等特点。简要介绍世界上第1座试验性质的太阳能热风发电站。对太阳能热风发电技术相关研究历程从试验研究和理论研究2个方面做了综述,重点介绍了澳大利亚电站的建设进展及最新相关学术研究进展,包括过渡段理论及试验研究、系统数值模拟和太阳能热风发电技术在高山地区的应用等。介绍我国太阳能资源情况,指出我国太阳能资源丰富,适合建造大型太阳能热风发电站。     

Charge transfer resistance of spray deposited and compressed counter electrodes for dye-sensitized nanoparticle solar cells on plastic substrates

Electrochemical impedance spectroscopy was used to determine the effective charge transfer resistances of porous dye-sensitized solar cell counter electrodes prepared by low-temperature spray deposition and compression of conductive carbon and platinized Sb-doped SnO₂ powders on indium tin oxide-coated plastic substrates. The charge transfer resistances were 0.5–2 and 8–13 Ω cm², respectively, when using 3-methoxypropionitrile as the electrolyte solvent. The manufacturing method used lends itself to produce mechanically stable and even-quality electrodes in an easy and fast manner.     

Electrochemical behavior of metallic materials used in seawater—interactions between glucose oxidase and passive layers

Six materials (stainless steel, nickel-base alloy, titanium, chromium, nickel and admiralty brass) are tested in chemical and biochemical synthetic seawaters. The biochemical seawater contains enzymes catalyzing oxidation of glucose (glucose oxidase), simulating the action of natural biofilms. The evolutions of free corrosion potential (Ecor) versus time, and of cathodic and anodic reactions are compared with those obtained in natural seawater. Then, electrochemical behavior is related to semi-conducting properties of passive films. When glucose oxidase is present, increase of Ecor versus time is only reported for materials presenting a n-type semi-conductor passive film, and whose cathodic reaction current is increased. On the contrary, when passive layers are p-type semi-conductors, cathodic and anodic reactions are increased, and lead to a global Ecor constant with time of immersion. It appears that interaction between bacteria, medium and materials includes evolution of semi-conducting properties of passive layers.     

mc-Si:H/c-Si solar cell prepared by PECVD

Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V oc of 549.8 mV, J sc of 32.19 mA·cm-2 and the cell's area of 1cm2.     

Analytic computation of the photocurrent density in a n-6H-SiC/p-Si/n-Si/p-Si0.8Ge0.2 multilayer solar cell

In this work we conceived a model of a multilayer solar cell composed by four layers of opposite conductivities: an n-type 6H-SiC used as a frontal layer to absorb high energy photons (energy gap equals 2.9 eV), a p-type Si layer, an n-type Si layer and a p-type SiGe back layer to absorb low energy photons (Si_0.8Ge_0.2 with an energy gap equal to 0.8 eV). The impurity concentration in every layer of the model is taken equal to 10¹⁷ cm⁻³ to ensure abrupt junctions inside the cell. The optical properties of the separate layers have been fitted and tabulated to be used for thin films devices numerical simulation. We developed the equations giving the minority carrier concentration and the photocurrent density in each abscissa of the model. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM0 solar spectrum. The results of simulation showed that the optimized structure could deliver, assuming 10⁵ cm/s surface recombination velocity, a photocurrent density of more than 53 mA/cm², which represents 88.3% of the ideal photocurrent (59.99 mA/cm²) that can be generated under AM0 solar spectrum.     

高输入功率因数的三相无源AC-DC变换器

对于采用三相不控整流桥作为前级的变换器，自然条件下其输入电流波形系数不高，使得输入功率因数委低，降低了电源的利用率。为此需要采用功率因数提高技术，其中无源PFC是一类重要的功率因数校正技术，在某些场合非常具有应用价值。本文介绍了几种三相无源AC-DC变换器的高功率因数方案，如采用LC滤波器、移相电抗器，谐振电抗器，移相变压器，相间变压器，相间电抗器等，在进行简单的工作原理描述后，给出了部分方案的MATLAB/SIMULINK仿真结果。     

Quantum dot integration in heterostructure solar cells

InAs self-assembled quantum dots (SA-QDs) were incorporated into GaAlAs/GaAs heterostructure for solar cell applications. The structure was fabricated by molecular beam epitaxy on p-GaAs substrate. After the growth of GaAs buffer layer, multi-stacked InAs QDs were grown by self-assembly with a slow growth rate of 0.01 ML/s, which provides high dot quality and large dot size. Then, the structure was capped with n-GaAs and wide band gap n-GaAlAs was introduced. One, two or three stacks of QDs were sandwiched in the p–n heterojunction. The contribution of QDs in solar cell hetero-structure is the quantized nature and a high density of quantized states. I–V characterization was conducted in the dark and under AM1 illumination with 100 mW/cm² light power density to confirm the solar cell performance. Photocurrent from the QDs was confirmed by spectral response measurement using a filtered light source (1.1-μm wavelength) and a tungsten halogen lamp with monochromator with standard lock-in technique. These experimental results indicate that QDs could be an effective part of solar cell heterostructure. A typical I–V characteristic of this yet-to-be-optimized solar cell, with an active area of 7.25 mm², shows an open circuit voltage V_oc of 0.7 V, a short circuit current I_sc of 3.7 mA, and a fill factor FF of 0.69, leading to an efficiency η of 24.6% (active area).     

High-performance carbon counter electrode for dye-sensitized solar cells

Here, we reported that a new carbon electrode prepared with an activated carbon was superior to a Pt sputtered electrode as the counter electrode of dye-sensitized solar cells. The photovoltaic performance was largely influenced by the roughness factor of carbon electrode. The open-circuit voltage increased by about 60 mV using the carbon counter electrode compared to the Pt counter electrode because of positive shift of the formal potential for I₃⁻/I⁻ couple.     

CdTe-CdS solar cells — Production in a new baseline and investigation of material properties

In this paper, we describe our new baseline for CSS-CdTe-CdS solar cells on 10 × 10 cm² substrates. The deposition of the p-n junction and all the following steps were performed at the Institut für Festkörperphysik (IFK) in Jena. Using the new baseline, we are already able to produce solar cells with similar properties as commercial ones. In the batch type process, all manufacturing steps can be investigated separately. We employ Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and external quantum efficiency (EQE) measurements to characterise the structure of the bulk materials and interfaces. It is demonstrated that by RBS the front contact becomes accessible for thinned CdTe films. At the back contact, RBS spectra show a tellurium accumulation which is due to etching. This tellurium rich layer is confirmed by XRD with Rietveld refinement. The intermixing at the CdS-CdTe interface caused by the activation step is quantified by a bandgap determination based on EQE measurements. From the bandgap energy of the CdTe_1 − xS_x compound, we calculated the sulphur fraction x at the interface. XRD measurements imply that the activation step induces a (111) texture in CdTe. With regard to an improved manufacturing process, our cells are compared to industrial cells produced by Antec Solar Energy.     

Space-charge-limited currents for organic solar cells optimisation

Basic suppositions and microphysical origin of the occurrence of the space-charge-limited currents (SCLC) are presented in general and for the temperature-modulated space-charge-limited currents (TM-SCLC) in particular. The criteria are given for the spectroscopical method TM-SCLC to be used for localized electron states elucidation in organic semiconducting materials for organic solar cells optimization and modelling. The “visibility “of the localized states by SCLC method, i.e. the power of the SCLC method to distinguish the localized states, is tested by the modelling, varying the temperature, energy position of localized states and their concentration. Generally, it was determined that the SCLC measurements results are more reliable with the increased energy of the states, with their increased concentration and with decreased temperature. The correlation (or its absence) between the measured current and activation energy on applied voltage, expressed by the dependence of preexponential factor of conductivity on activation energy (Meyer–Neldel rule), gives the possibility to determine the energy range where the reconstruction of density of localized states function is reliable.