Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

源气体流量比对F-DLC薄膜结构的影响

以高纯石墨作靶，CHF3/Ar作源气体采用反应磁控溅射法制备出了氟化类金刚石（F-DLC）薄膜。拉曼光谱表明，CHF3相对流量的增加会引起薄膜的D峰与G峰强度之比I（D）/I（G）减小，晶粒增大，芳香环结构出例下降。红外吸收光谱分析证实了这些推论，指出这是由于薄膜中氟含量上升的结果。     

PbZr0.52Ti0.48O3薄膜红外椭圆偏振光谱研究

用磁控溅射法在Pt/Ti/SiO2 /Si衬底上制备了PbZr0 .52 Ti0 .4 8O3(PZT)薄膜 .XRD结果表明经过退火后的PZT薄膜呈现多晶结构 .通过红外椭圆偏振光谱仪测量了λ为 2 .5～ 12 .6 μm范围内PZT薄膜的椭偏光谱 ,采用经典色散模型拟合获得PZT薄膜的红外光学常数 ,同时拟合得到未经处理的PZT薄膜和退火后PZT薄膜的厚度分别为 45 4.2nm和 45 0 .3nm .最后通过拟合计算得到结晶PZT薄膜的静态电荷值为 |q|=1.76 9± 0 .0 2 4.这说明在磁控溅射法制备的PZT薄膜中 ,电荷的转移是不完全的 .     

Studies of photoconductivity in β-Apo-8′ carotenal

The photoconductive properties of a carotenoid polyene,β-Apo-8′ carotenal in polycrystalline form has been studied. The growth of the photocurrent shows an overshoot in the growth-time curve before steady state value is attained. This behaviour of photocurrent is proposed to be due to higher value of recombination coefficient than trapping coefficient. From the temperature dependence study it is observed that the steady state photocurrent, at first increases with increase of temperature, attains a maximum at a particular temperatureT _max and then decreases with temperature. TheT _max value agrees with the temperature above and below which steady state photocurrent is attained differently. Monomolecular and bimolecular recombination processes at two temperature regimes are proposed to account for the observed behaviour. The dependence of photocurrent with excitation light intensity and wavelength study provide information on the carrier generation processes. The fast decay of photocurrent have been observed at different temperatures and from this study the decay constant is calculated and it is found to be temperature independent.     

GaP：（N）的背景光谱和发光尖峰

获得高分辨ＧａＰ（Ｎ）光致发光光谱，观察到等电子陷陆束缚激子发光中ＬＯ和ｌｏｃ多声子发射，其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论，还观察到局域声子效应－－光谱相似定律和相当显著的背景光谱。     

Optical and thermal properties of poly(ethylene oxide) doped with MnCl2 salt

The optical and thermal properties of prepared poly(ethylene oxide)/MnCl₂ films were studied as a function of MnCl₂ concentration at room temperature. The observed optical energy gap (E_opt) and energy gap tail (ΔE) were determined from the measured absorption spectra. It was found that the optical energy gap decreases with MnCl₂ concentration, and the absorption coefficient reduces sharply at concentration of 5 wt% MnCl₂ compared with the neat PEO. Differential scanning calorimetry (DSC) measurement shows that the heat of fusion increases with the MnCl₂ concentration, while the melting point decreases. Correlation between the observed optical energy gap and heat of fusion is presented.     

磁偏转电子枪研制核靶

文章叙述了磁偏转电子枪的原理和结构以及用ＥＱＤ－３型电子枪研制各种核靶的工艺过程。     

GaAs／AlGaAs多量子阱红外探测器的光电流谱

测量了ＧａＡｓ／ＡｌＧａＡｓ多量子阱红外探测器在零偏压、小偏流和大偏压等条件下的光电流谱，并结合理论计算的光跃迁能量讨论了光电流谱的多峰结构和异常增强特性。     

Structural change in the Brill transition of Nylon m/n (1) Nylon 10/10 and its model compounds

Structural changes in the Brill transitions of Nylon 10/10 and its model compounds have been investigated by carrying out the temperature-dependent measurements of X-ray diffraction and infrared spectra along with the DSC measurement. The crystal structure at room temperature was found to be the so-called α form with the all-trans zigzag methylene segments. When the samples were heated, the infrared progression bands of the methylene segments, which are sensitive to the length of all-trans segmental parts, were found to change their spectral patterns in the transition temperature region: the progression bands decreased in intensity and disappeared above the transition region. At the same time several new bands were observed to appear, which were found to correspond to the progression bands of (CH₂)₇-(CH₂)₅trans-zigzag segments. These spectral changes indicate that the methylene segments were conformationally disordered by an invasion of some gauche bonds and as a result the effective length of trans-zigzag segments became shorter. This conformational disordering was found to occur more remarkably in the methylene segment of NH-(CH₂)₁₀-NH part than the CO-(CH₂)₈-CO part. At the same time the infrared bands of amide groups, in particular the bands sensitive to the twisting angles about the CH₂-amide bonds were found to show the remarkable change, indicating the local conformational change from planar-zigzag to twisted form in the CH₂-amide moiety. The frequency shift of amide A band (NH stretching mode) indicated a weakening of intermolecular hydrogen bonds, which however, did not disappear up to the melting region. From these data combined with the X-ray diffraction data, the structural disordering in the Brill transition phenomena was deduced concretely.     

Control of polymerization processes of 10,12-pentacosadiynoic acid LB films

Studies have been carried out on KrF excimer laser light (EX), X-ray or electron beam (EB) induced polymerization of 10,12-pentacosadiynoic acid (PDA) Langmuir-Blodgett (LB) films in relation to molecular density or molecular arrangement of the films using X-ray diffraction analysis, infrared (IR) spectroscopy and Raman spectroscopy. The molecular arrangement or density of the PDA LB films was controlled by subphase conditions when the films were built up, such as pH, temperature of a subphase or salt concentration in the subphase. Polymerization sensitivity of the PDA LB film was affected by the arrangement or molecular density. On low density (A type) films the polymerization occurred by irradiation with EX, X-ray or EB, but on high density (B type) films the polymerization occurred only when the irradiation was carried out by high energy beams such as X-ray or EB. Decomposition of polymerized films was observed further by excessive irradiation of EX or X-ray, but not on the B type films. It was revealed by X-ray diffraction analysis that in the A type film, the PDA molecules bent to a larger extent than those in the B type film and the polymerization proceeded topochemically, that is, the thickness decreased little after EB irradiation in a helium atmosphere. On the other hand, in the B type film, the thickness decreased by about 10% as a result of EB irradiation. By IR reflection-absorption (RA) and Raman measurements, it was confirmed that conjugated diacetylenic bonds disappeared and conjugated double and new conjugated triple bonds appeared after high energy beam irradiations. These results support the supposition that 1,4-polymerization, i.e. polydiacetylene type polymerization, occurs easily in the A type film and 1,2- or 3,4-polymerization, i.e. polyacetylene type polymerization, occurs in the B type film, and that the polymerized A type film was decomposed at the polydiacetylenic bond when the irradiation continued further. It was also shown that the polyacetylene type polymer was obtained only when the B type film was irradiated with the high energy beam.