离子注入在Power MosFET中的应用

本文结合笔者的科研,论述了离子注入在Power MOS FET制作中的应用,并指出:由于离子注入较之扩散具有一系列优点,因此,离子注入不仅在制作Power MOS FET中作用巨大,而且在其他功率器件中的应用也将越来越广泛。     

离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

金属中注入氮离子改善抗磨粒磨损性能的研究

在金属材料(轴承钢、铝、钛)中注入不同剂量的氮离子,用称重法测量被注材料抗磨粒磨损性能的改善状况。当注入剂量达到10~(17)/cm~2时,此性能有所改善。在(2～5)×10~(17)/cm~2范围内,此性能改善状况较佳。     

Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

We demonstrate the epitaxial growth of silicon with ion assisted deposition on pyramidally structured porous silicon and investigate the microstructure of the epitaxial layer with transmission electron microscopy. The major defects in the grown pyramid structure are stacking faults on the {1 1 1} facets of the pyramids, whereas the epitaxial layers on the {0 0 1} facets are defect-free. The stacking fault density decreases by about three orders with increasing the deposition temperature from 600 to 850°C, but is constant when the ion energy changes. Depending on growth conditions Si-interstitials are built into the layers, which during electron microscopy form so called rod-like defects.     

Pre-irradiation grafting of styrene and maleic anhydride onto PVDF membrane and subsequent sulfonation for application in vanadium redox batteries

A poly(vinylidene difluoride) (PVDF) membrane was grafted with styrene (St) and maleic anhydride (MAn) using an electron-beam-induced pre-irradiation grafting technique. The grafted membrane (PVDF-g-PS-co-PMAn) was then sulfonated and hydrolyzed to give an ion exchange membrane (denoted as PVDF-g-PSSA-co-PMAc) for vanadium redox flow batteries (VRB) use. Micro-FTIR analysis indicated that PVDF was successfully grafted and sulfonated at the above condition, and the membrane with a high grafting yield (GY) can be easily prepared in a St/MAn binary system at low dose due to a synergistic effect. The water uptake and ion exchange capacity (IEC) of the PVDF-g-PSSA-co-PMAc membrane increased with GY, so too did the conductivity. At a GY of 33.6%, the resulting PVDF-g-PSSA-co-PMAc membrane showed a much higher IEC and conductivity than a conventional Nafion117 membrane, and a much lower permeability of vanadium ions: ca. 1/11 to 1/16 of that through Nafion117. Open circuit voltage measurements showed that the VRB assembled with the PVDF-g-PSSA-co-PMAc membrane maintained values above 1.3 V after a period of 33 h, which was much longer than that with the Nafion117 membrane. It is expected that this work provides a new approach for the fabrication of ion exchange membranes for VRB.     

An investigation into nickel implanted 316L stainless steel as a bipolar plate for PEM fuel cell

A nickel-rich layer about 100 μm in thickness with improved conductivity was formed on the surface of austenitic stainless steel 316L (SS316L) by ion implantation. The effect of ion implantation on the corrosion behavior of SS316L was investigated in 0.5 M H₂SO₄ with 2 ppm HF solution at 80 °C by potentiodynamic test. In order to investigate the chemical stability of the ion implanted SS316L, the potentiostatic test was conducted in an accelerated cathode environment and the solutions after the potentiostatic test were analyzed by inductively coupled plasma atomic emission spectrometer (ICP-AES). The results of potentiodynamic test show that the corrosion potential of SS316L is shifted toward the positive direction from −0.3 V versus SCE to −0.05 V versus SCE in anode environment and the passivation current density at 0.6 V is reduced from 11.26 to 7.00 μA cm⁻² in the cathode environment with an ion implantation dose of 3 × 10¹⁷ ions cm⁻². The potentiostatic test results indicate that the nickel implanted SS316L has higher chemical stability in the accelerated cathode environment than the bare SS316L, due to the increased amount of metallic Ni in the passive layer. The ICP results are in agreement with the electrochemical test results that the bare SS316L has the highest dissolution rate in both cathode and anode environments and the Ni implantation markedly reduces the dissolution rate. A significant improvement of interfacial contact resistance (ICR) is achieved for the SS316L implanted with nickel as compared to the bare SS316L, which is attributed to the reduction in passive layer thickness caused by the nickel implantation. The ICR values for implanted specimens increase with increasing dose.     

离子注入中的沟道效应控制

离子注入中的沟道效应使注入离子在深度上的控制变得很困难，并使SHEET值的均一性恶化，本文借助计算机模型。对注入剂量，注入能量，硅片基板方位，硅片表面薄膜氧化层厚度变化时，研究分析了注入沟道效应的相应变化。     

聚焦离子束工作原理及刻蚀性能研究

综述了聚焦离子束系统的结构和基本原理,介绍了国产化聚焦离子束系统的结构与特点。基于国产化聚焦离子束系统进行了硅材料刻蚀实验,研究了硅材料刻蚀速率与离子束流大小的关系,建立了刻蚀速率与束流大小的关系方程,进行了硅悬梁微结构刻蚀加工。结果表明,国产聚焦离子束系统可满足硅微悬梁结构加工的应用需要。     

聚焦离子束装置中的工件台及控制系统

聚焦离子束技术(FIB)是一种集形貌观测、定位制样、成份分析、薄膜淀积和无掩模刻蚀各过程于一身的新型微纳加工技术。几十年来,随着关键技术的不断突破和完善,得到了前所未有的发展,所突破的关键技术之一就是精密工件台的使用。     

New ISFET interface circuit design with temperature compensation

An integrated and new interface circuit with temperature compensation has been developed to enhance the ISFET readout circuit stability. The bridge-type floating source circuit suitable for sensor array processing has been proposed to maintain reliable constant drain-source voltage and constant drain current (CVCC) conditions for measuring the threshold voltage variation of ISFET due to the corresponding hydrogen ion concentration in the buffer solution. The proposed circuitry applied to Si₃N₄ and Al₂O₃-gate ISFETs demonstrate a variation of the drain current less than 0.1 μA and drain-source voltage less than 1 mV for the buffer solutions with the pH value changed from 2 to 12. In addition, the scaling circuitry with the V_T temperature correction unit (extractor) and LABVIEW software are used to compensate the ISFET thermal characteristics. Experimental results show that the temperature dependence of the Si₃N₄-gate ISFET sensor improved from 8 mV/°C to less than 0.8 mV/°C.