Investigation of crystal characteristics,Raman spectra,and microwave dielectric properties of Mg1-xZnxTa2O6 ceramics

Mg_(1-x)Zn_xTa₂O₆ (x = 0.00?0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. We used XRD and Rietveld refinement to demonstrate that a pure Mg_(1-x)Zn_xTa₂O₆ phase with trirutile structure was formed. Zn²⁺ substitution helped to decrease the Raman full width at half width of the A_1g mode at 703 cm^?1, which resulted in an increase in the order and rigidity of the TaO₆ octahedron, this in turn contributed to improving the Q×f values. Additionally, the introduction of Zn²⁺ significantly promoted grain growth and increased the dense, and the molecular polarizability, these factors lead to a higher permittivity. Moreover, enhanced Ta-O bond energy resulted in a more stable TaO₆ octahedron in the Mg_(1?x)Zn_xTa₂O₆ system, which contributed to enhanced τ_f values via substitution of Zn²⁺ doped on the A-site. Correspondingly, the microwave dielectric properties were significantly improved for 0.04-doped samples, obtaining: ε_r = 27, Q × f = 185,000 GHz (at 7.47 GHz), τ_f =32 ppm/°C.     

Impedance matching optimization of SiCf/Si3N4–SiOC composites for excellent microwave absorption properties

SiC fiber reinforced ceramic matrix composites (SiC_f-CMCs) are considered to be one of the most promising materials in the electromagnetic (EM) stealth of aero-engines, which is expected to achieve strong absorption and broad-band performance. Multiscale structural design was applied to SiC_f/Si₃N₄–SiOC composites by construction of micro/nanoscale heterogeneous interfaces and macro double-layer impedance matching structure. SiC_f/Si₃N₄–SiOC composites were fabricated by using SiC fibers with different conductivities and SiOC–Si₃N₄ matrices with gradient impedance structures to improve impedance matching effectively. Owing to its unique structure, SiC_f/Si₃N₄–SiOC composites (A3-composites) achieved excellent EM wave absorption performance with a minimum reflection coefficient (RC_min) of ?25.1 dB at 2.45 mm and an effective absorption bandwidth (EAB) of 4.0 GHz at 2.85 mm in X-band. Moreover, double-layer SiC_f/Si₃N₄–SiOC with an improved impedance matching structure obtained an RC_min of ?56.9 dB and an EAB of 4.2 GHz at 3.00 mm, which means it can absorb more than 90% of the EM waves in the whole X-band. The RC is less than ?8 dB at 2.6–2.8 mm from RT to 600 °C in the whole X-band, displaying excellent high-temperature absorption performance. The results provide a new design opinion for broad-band EM absorbing SiC_f-CMCs at high temperatures.     

Prompting structure stability of O3–NaNi0.5Mn0.5O2 via effective surface regulation based on atomic layer deposition

Layered O3 type oxides exhibit promising prospects as high-performance cathodes for sodium-ion batteries (SIBs) due to their low cost and high theoretical capacities. Nevertheless, the intrinsic surface composition and bulk structure degradation upon cycling presents a huge obstacle to stable sodium-ion storage/transportation. Besides, the effective surface decoration on layered O3 oxides is still challenging through conventional wet chemical route owing to their extraordinarily high surface sensitivities. Herein, a typical O3 type layered oxide of NaNi_0.5Mn_0.5O₂ (NNMO) was selected and successfully encapsulated by precisely controlled Al₂O₃ layers via atomic layer deposition (ALD) technology. With the optimally controlled Al₂O₃ thickness of 3 nm, the surface regulated NNMO delivers a highly reversible capacity of 73.6 mA h g^-1, with a significantly improved capacity retention of 68.0% after 300 cycles at 0.5 C, and a superior rate capability of 65.8 mA h g^-1 at 10 C. Further air sensitivity tests demonstrate that the protective layer could effectively mitigate the generation of sodium-based impurities on NNMO, and reduce the surface sensitivities. Both chemical and electrochemical aging tests confirm the contribution of Al₂O₃ coating layer in alleviating ion dissolution as well as stabilizing the structure and morphology of NNMO. Based on regulating the surface of O3 type layered oxides utilizing ALD technique, this work supplies an effective and facile strategy to overcome the challenges from fast structure degradation and electrochemical property decay, which not only highlights the significance and effectiveness of surface engineering in secondary batteries, but also sheds light on accurate interface construction and regulation for active electrode materials, particularly for those sensitive to ambient atmosphere.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Densification mechanism during reactive hot pressing of B4C-ZrO2 mixtures

The densification behaviors of pure B₄C and B₄C-ZrO₂ mixtures were compared during hot pressing. The results showed that in-situ formed ZrB₂ effectively enhanced the densification process of B₄C-ZrO₂ mixtures, more significantly during the intermediate stage. Within the relative density ranging from 0.75 to 0.90, the B₄C-15?wt%ZrO₂ mixture (B15Z) achieved the maximum densification rate as twice much as that of pure B₄C. The stress exponent n>3 indicated plastic deformation was the dominant densification mechanism of B15Z. The viscosities of plastic flow were evaluated using Murray-Rodger-William equation and the viscosity of B15Z was only a quarter of that in pure B₄C. The sintering activation energy was calculated to be 305.9?kJ/mol for pure B₄C and 197?kJ/mol for B15Z, respectively. It was proposed that the lower viscosity of plastic flow and activation energy accelerated the sliding and propagating motions of plastic flow, by which underlain the enhanced densification behaviors of B₄C-ZrO₂ mixtures.     

Impact sensitivities of energetic materials: Exploring the limitations of a model based only on structural formulas

Using a comprehensive set of drop weight impact test data (h₅₀) newly compiled from literature for 308 materials, a recent approach to predict impact sensitivities of nitro compounds is generalized to most explosive substances of interest. Compared to previous ones, this procedure is more thoroughly validated and exhibits a good predictive value. Furthermore, it yields new insight into the physical mechanisms involved, explaining for instance the unexpected desensitization of some oxygen-deficient triazoles upon nitration.     

Study on maximum power point tracking of photovoltaic array in irregular shadow

Traditional maximum power point tracking (MPPT) methods can hardly find global maximum power point (MPP) because output characteristics curve of photovoltaic (PV) array may have multi local maximum power points in irregular shadow, and thus easily fall into the local maximum power point. To address this drawback, Considering that sliding mode variable structure (SMVS) control strategy have such advantages as simple structure, fast response and strong robustness, and P&O method have the advantages of simple principle and convenient implementation, so a new algorithm combining SMVS control method and P&O method is proposed, besides, PI controller is applied to reduce system chattering caused by switching sliding surface. It is applied to MPPT control of PV array in irregular shadow to solve the problem of multi-peak optimization in partial shadow. In order to verity the rationality of the proposed algorithm, the experimental circuit is built, which achieves MPPT control by means of the proposed algorithm and P&O method. The experimental results show that compared with the traditional P&O algorithm, the proposed algorithm can fast track the global MPP, tracking speed increases by 60% and the relative error decreased by 20%. Moreover, the system becomes more stable near the MPP, the fluctuations of output power is greatly reduced, and thus make full use of solar energy.     

Effect of stoichiometry and Cu-substitution on the phase structure and hydrogen storage properties of Ml-Mg-Ni-based alloys

To improve the electrochemical properties of rare-earth–Mg–Ni-based hydrogen storage alloys, the effects of stoichiometry and Cu-substitution on the phase structure and thermodynamic properties of the ...     

一款紧凑增强型可变阻抗电磁带隙结构

基于传统AI-EBG结构,提出了一种小尺寸的增强型电磁带隙结构,实现了从0.5~9.4 GHz的宽频带-40 dB噪声抑制深度,且下截止频率减少到数百MHz,可有效抑制多层PCB板间地弹噪声。文中同时研究了EBG结构在高速电路应用时的信号完整性问题,使用差分信号方案可改善信号完整性。