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101.
In this study, a machining strategy for a polishing process to remove an arbitrary and axially symmetric profile is proposed. The strategy is to plan the tool motion so that a desired profile can be accurately machined. From the volume removing analysis of a polishing process, it is suggested that the dwelling time of the tool at a position should be a linear function of the product of the depth to be removed by its corresponding radius. By using this strategy, three types of errors may be induced: the machining time–distribution error, the ripple error and the resolution error. It is shown that these errors are related to the profile, the tool step, the volume removing rate and the size of the machining zone. The qualitative and quantitative properties of these errors are analyzed. This analysis indicates that a dominant factor in deciding these errors is the tool step size. By increasing this size, both the machining time–distribution error and the resolution error are reduced but the ripple error is enhanced. A tactic is proposed to solve the conflict in choosing the tool step. The experimental study conforms that the proposed strategy can accurately remove an arbitrary profile and the error analysis is reasonable. 相似文献
102.
Optical fiber polishing automation with on-line force sensing 总被引:1,自引:0,他引:1
Yih-Tun Tseng Tzu-Yu Hung Jui-Hung Liu Chung-Heng Chang 《International Journal of Machine Tools and Manufacture》2007,47(6):892-899
This study proposes a bare fiber polishing control strategy and force sensing mechanism to improve the performance of fiber polishing in optical communication. By analyzing the force and problems encountered during polishing, this study successfully measured the force with the required precision. Finally, the experimental results demonstrate a yield improvement from 20% to 80%, for a fiber tip offset within 1.5 μm. 相似文献
103.
Fábio J.P. Sousa Orestes E. Alarcon Walter L. Weingärtner Márcio C. Fredel Maria F.Q. Vázquez Enrique S. Vilches 《Journal of the European Ceramic Society》2013,33(15-16):3369-3378
The present work addresses the distribution of texture over the surface of porcelain stoneware tiles due to kinematics imposed by industrial polishing process. The scratching process was simulated using a computational algorithm, which was based on the kinematic equations for the whole myriad of abrasive particles. Different scratching patterns were identified over the polished surface and their corresponding positions were mapped. The experimental results showed that regions in the tile centre present smaller tendencies for exhibiting preferential textures than those of the lateral ones. The final texture was slightly asymmetric and different from those simply left by the last scratches. The definition of three polishing domains was then suggested according to different phenomenological criteria. Results from both experiments and simulations made evident the influence of the kinematic parameters adopted by the industries on the polishing quality of porcelain stoneware tiles. 相似文献
104.
105.
Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers 总被引:1,自引:0,他引:1
Mono-crystalline silicon wafers are important materials in the semiconductor industry for fabricating integrated circuits and micro-electro-mechanical systems. To ensure high surface integrity of polished wafers, the effect of pad texture and its variation on the pad performance needs to be understood. This paper studies experimentally the dependence of pad performance on its texture deterioration by investigating its correlation with polishing time, polishing pressure, and material removal rate. The study concludes that material removal rate decreases as the cylindrical cell structure of a pad is gradually deteriorated, that there is a pad life limit beyond which polishing quality can no longer be maintained, and that the workable pad life can be extended to a certain degree by applying higher polishing pressure. 相似文献
106.
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108.
Operational optimization of Chemical Mechanical Polishing, which sets the proper polishing time, is very important for improving the production efficiency of semiconductor manufacturing processes. However, usual operational optimization methods based on Run-to-Run strategies have not been suitable for the mixed-product processing mode of CMP. Also, under the mode, it is very difficult to model the polishing time due to the insufficient number of the corresponding samples. In this paper, a Two-stage Clustered Multi-Task Learning method is proposed for the above modelling problem with small sample size, in which the proposed Probability-based Task Clustering algorithm first groups similar products so that their corresponding samples can be used for modelling simultaneously. After this, in each cluster, the proposed Shared Multi-Task Learning (SMTL) algorithm obtains the corresponding model for each kind of products cooperatively, in which the parameter vector of each model is the sum of two parts – the shared part and the private part. In each cluster, the shared part represents the common characteristics of all products and the private part represents the particular characteristics of each kind of products. Also, in SMTL, the two parts can be obtained after a non-smooth convex optimization problem is constructed and solved through the Accelerated Proximal Method. The results of numerical simulations on a practical industrial data set and the other two data sets demonstrate the effectiveness of the proposed algorithms. The proposed algorithms can also be used in other problems such as the modelling problems of key indexes of urban development and operation. 相似文献
109.
Laser thermochemical machining allows a controlled material removal of metallic workpieces for an aesthetic or functionalized structuring. This work deals with the question, why does a smoothing effect occurs and what are the mechanisms behind it? The results show, that the surface smoothing is based on the preferred material removal of the roughness peaks compared to the valleys, as well as microstructure related limits of the surface quality. This might be caused not by one single, but a combination of electrical, thermal and physicochemical mechanisms. These effects can be used for the controlled and selective surface polishing. 相似文献
110.