GZO厚度对非晶硅电池中复合背电极的影响

在非晶硅太阳能电池中加入复合背电极是提高非晶硅太阳能电池光电转换效率和稳定性的有效手段.本文利用磁控溅射技术在非晶硅薄膜太阳能电池上制备了ZnO :Ga(GZO)/Al复合背电极,研究了GZO厚度对GZO薄膜光电性质及非晶硅电池中GZO/Al复合背电极性能的影响.研究表明：随着GZO层厚度的增加,GZO薄膜的光电性质均表现出较高水平,适合制备GZO/Al复合背电极;相较于单层Al背电极的非晶硅太阳能电池,具有GZO/Al复合背电极的太阳能电池性能大幅提高.当GZO层厚度为100 nm时,太阳能电池的短路电流(I_SC)、开路电压(V_OC)和填充因子(FF)分别达到8.66 mA,1.62 V和54.7%.     

氮流量比对磁控溅射(CoCrFeNi)Nx高熵合金薄膜的组织和性能的影响

采用直流磁控溅射法制备(CoCrFeNi)N_x高熵薄膜,研究了氮流量比对薄膜的力学性能和电磁性能的影响。结果表明,在不同氮流量比条件下制备的(CoCrFeNi)N_x薄膜,都具有致密的组织、简单的FCC结构并呈现(200)择优取向。随着氮流量比从10%提高到30%,薄膜的硬度和弹性模量随之增大,其最大值达到14 GPa和212 GPa;电阻率基本上呈增大的趋势,最大值达到138 μΩ?cm;饱和磁化强度和磁导率随之减小,薄膜饱和磁化强度最高为427.43 emu/cm³。薄膜的矫顽力约为0。     

Effect of Sm-doping on the morphology and magnetic properties of radio frequency magnetron sputtered Ni-Mn-Ga films

Ni55.5Mn21Ga23.5 and Ni54Mn22Ga23Sm1 films were prepared by radio frequency (RF) magnetron sputtering. The effect of Sm do-pant on the morphologic and magnetic properties of Ni55.5Mn21Ga23.5 films was investigated. Sm doping can refine the particle size of the films from 100 to 60 nm, and further grain growth is not occurs even after annealing at 1073 K for 3.6 ks. Compared to Ni55.5Mn21Ga23.5 films, Sm-doped Ni54Mn22Ga23Sm1 films are easier to be magnetized and have a lower martensitic transformation temperature. In addition, the Curie temperature can also be adjusted, decreasing from 350 to 325 K after Sm doping. Martensitic transformation is not observed in the Sm-free films, which is close to the Curie temperature in the Sm-doped films, giving rise to the overlap of the structural and magnetic transi-tion temperatures.     

CrAIN／TiAIN纳米多层膜的微结构及其性能研究

采用磁控反应溅射法制备了不同调制周期的CrAIN／TiAIN纳米多层膜,并通过x射线衍射仪、显微硬度计、扫描电镜分析了调制周期对多层膜的微结构、力学性能和高温抗氧化性能的影响。结果表明：CrAIN／TiAIN纳米多层膜共格外延生长,呈现CrAIN（或TiAIN）面心立方结构,且呈（111）择优取向;CrAIN／TiAIN纳米多层膜在某些调制周期出现硬度异常升高的超硬度效应;CrAIN／TiAIN纳米多层膜比CrAIN,TiAIN单层膜具有更好的高温稳定性,高温时仍具有较高的硬度。     

不同溅射时间下AlN缓冲层对ZnO薄膜的影响

实验采用射频磁控溅射技术,制备了不同溅射时间下AlN缓冲层的ZnO薄膜,研究了薄膜的结构、形貌及电学性能.结果表明,不同溅射时间下AlN缓冲层ZnO薄膜的生长依然是(002)择优取向,而且当缓冲层溅射时间为60min时,ZnO薄膜的结构和电学性能最好.     

NiFe层厚度对薄膜磁阻性能的影响

用直流磁控溅射方法制备了以Ta为缓冲层的Ni80Fe2O薄膜。研究了NiR层厚度对薄膜电阻变化量△R的影响。实验发现△R随NiFe厚度先变大后减小，最大约为0．3Ω，当NiFe厚度达到140nm后△R趋于饱和。其变化的原因是NiFe厚度影响着晶粒尺寸和表面粗糙度，进而影响着电子的散射，使△R呈现上述的变化趋势。     

ZAO透明导电薄膜的制备及性质

ZAO（ZnO：Al）透明导电薄膜是一种具有高的载离子浓度和宽禁带的半导体氧化物，电学和光学性能优异。极具应用前景。本文介绍了ZAO薄膜的制备现状、特性、磁控溅射参数对其电学和光学性质的影响以及今后研究的方向。     

离子束溅射制备Si／Ge多层膜研究

采用离子束溅射方法在Si衬底上制备Si／Ge多层膜，通过改变生长温度、溅射速率等因素得到一系列Si／Ge多层膜样品；通过X射线衍射、Raman散射等表征方法研究薄膜结构与生长条件的关系。在小束流（10mA）、室温条件下制备出界面清晰、周期完整的Si／Ge多层膜。     

Preparation and characterization of sputtered Cu films containing insoluble Nb

Copper films containing various amounts of insoluble Nb (up to 24.7 at.%) were prepared by r.f. magnetron sputtering. The crystallography and microstructure of the films were investigated for as-deposited and annealed Cu(Nb) thin films. Cu(Nb) thin films are found to consist of non-equilibrium supersaturated solid solution of Nb in Cu with a nanocrystalline microstructure. X-ray diffraction and scanning electron microscope analyses revealed a reduction in the grain sizes of the films with increasing Nb content in the films leading to a grain refinement. The electrical resistivity of as-deposited and annealed Cu(Nb) thin films is found to be low for an Nb content 2.7 at.%. Significant drops in the resistivity were observed for the high Nb contents after annealing at 530 °C which may be due to grain growth and formation of Nb-bearing phase in the film. Microhardness of the films was found to increase with the Nb concentration due to the combined effects of grain refinement and the solute strengthening of Nb.     

Microstructure of direct current and pulse magnetron sputtered Cr-B coatings

Chromium diboride thin films possess desirable combinations of properties (such as high hardness, wear resistance, chemical inertness, high thermal and electrical conductivity), which are attractive for a wide range of potential industrial applications. However, these properties depend strongly on the deposition process and parameters. Investigation of the resultant coating structures could explain certain differences between them, giving important information about the characteristics of the deposition process (which in this particular case is a recently developed method involving magnetron sputtering of loosely packed blended powder targets) and pointing out directions for improvement.In this paper, Cr-B coatings deposited by direct current (DC) and DC-pulse magnetron sputtering of loosely packed blended powder targets are characterised by transmission electron microscopy (TEM) techniques (electron diffraction and bright-field/dark-field imaging). The structures of the coatings deposited with different parameters are investigated and compared, and the effect of oxygen contamination on the structure is discussed.Coatings with an extremely fine, nanocolumnar structure were observed. DC sputter deposited (and generally non-stoichiometric) Cr-B coatings exhibit a short range ordered ‘zone T’ microstructure, while DC-pulse deposited stoichiometric CrB₂ coatings are dense and defect-free, crystalline and show strong preferred orientation.A small amount of contamination by oxygen of the interfacial sub-layers (due to the target material being a powder) of the DC-pulse magnetron sputter deposited stoichiometric CrB₂ (and near-stoichiometric CrB) coatings was found to affect the structure by suppressing nanocolumnar growth and promoting equiaxed, nanometer-sized grains, close to the coating/substrate interface. The majority of the coating however remained nanocolumnar.