纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分     

混合稀土对AZ91镁合金在NaCl溶液中的腐蚀行为影响

通过静态失重法、极化曲线和交流阻抗测试研究了混合稀土 (Re)对AZ91镁合金腐蚀行为的影响。结果表明 :Re的加入使AZ91微观组织得到改善 ,减缓了AZ91镁合金在NaCl溶液中的腐蚀     

纳米4-H碳化硅薄膜的掺杂现象

对纳米晶SiC薄膜进行了P和B的掺杂,B掺杂效率比P高,其暗电导预前因子与激活能遵守Meyer-Neldel规则,并有反转Meyer-Neldel规则出现.掺杂效率比非晶态碳化硅薄膜高是纳米碳化硅薄膜的特点之一.非晶态中的隧穿和边界透射对输运有一定贡献.     

竹坑水库大坝安全鉴定分析

在竹坑水库大坝安全鉴定中,认真分析了该工程存在的主要问题,并针对大坝的结构稳定和渗流稳定作了详细的分析论证.     

Synthesis and Spectral Properties of Mixed-Ligand Complexes of Lanthanide Perchlorate with Bis-(phenylsulfinyl)ethane and Organic Lewis Bases

ＳｙｎｔｈｅｓｉｓａｎｄＳｐｅｃｔｒａｌＰｒｏｐｅｒｔｉｅｓｏｆＭｉｘｅｄＬｉｇａｎｄＣｏｍｐｌｅｘｅｓｏｆＬａｎｔｈａｎｉｄｅＰｅｒｃｈｌｏｒａｔｅｗｉｔｈＢｉｓ（ｐｈｅｎｙｌｓｕｌｆｉｎｙｌ）ｅｔｈａｎｅａｎｄＯｒｇａｎｉｃＬｅｗｉｓＢａｓｅ...     

稀土树脂相分光光度法研究

在HCl—KCl(pH0.5)介质中,稀土—三溴偶氮胂二元络合物能较好地被阴离子交换树脂吸附。RE_2O_8在0～8μg/25ml范围内符合比尔定律,以双波长等吸收点法(测量波长λ_1=650nm,参比波长λ_2=740nm)扣除树脂背景影响,应用于稀土矿中稀土总量测定,结果令人满意。     

Halogen-induced charge transfer polymerization of pyrrole in aqueous media

Simultaneous polymerization and doping of pyrrole have been carried out in the presence of a halogenic electron acceptor, bromine (Br₂) or iodine (I₂), in aqueous dispersion or in a two-phase solvent system. The morphology of the polypyrrole (PPY) so produced is granular and porous. The electrical conductivity of the PPY-I₂ charge transfer (CT) complex is of the order of 10¹ ohm⁻¹ cm⁻¹ while that of the PPY-Br₂ complex is about one order of magnitude less. Both complexes are stable in the atmosphere. The physicochemical properties of the PPY-I₂ and PPY-Br₂ CT complexes prepared under various experimental conditions are examined in detail.     

氢化非晶硅磷掺杂工艺条件的研究

本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Morphology and Forming Mechanism of Rare Earth Inclusions During Solidification of Steel

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