Red,Green, and Blue Light‐Emitting Polyfluorenes Containing a Dibenzothiophene‐S,S‐Dioxide Unit and Efficient High‐Color‐Rendering‐Index White‐Light‐Emitting Diodes Made Therefrom

A series of blue (B), green (G) and red (R) light‐emitting, 9,9‐bis(4‐(2‐ethyl‐hexyloxy)phenyl)fluorene (PPF) based polymers containing a dibenzothiophene‐S,S‐dioxide (SO) unit (PPF‐SO polymer), with an additional benzothiadiazole (BT) unit (PPF‐SO‐BT polymer) or a 4,7‐di(4‐hexylthien‐2‐yl)‐benzothiadiazole (DHTBT) unit (PPF‐SO‐DHTBT polymer) are synthesized. These polymers exhibit high fluorescence yields and good thermal stability. Light‐emitting diodes (LEDs) using PPF‐SO25, PPF‐SO15‐BT1, and PPF‐SO15‐DHTBT1 as emission polymers have maximum efficiencies LE_max = 7.0, 17.6 and 6.1 cd A^?1 with CIE coordinates (0.15, 0.17), (0.37, 0.56) and (0.62, 0.36), respectively. 1D distributed feedback lasers using PPF‐SO30 as the gain medium are demonstrated, with a wavelength tuning range 467 to 487 nm and low pump energy thresholds (≥18 nJ). Blending different ratios of B (PPF‐SO), G (PPF‐SO‐BT) and R (PPF‐SO‐DHTBT) polymers allows highly efficient white polymer light‐emitting diodes (WPLEDs) to be realized. The optimized devices have an attractive color temperature close to 4700 K and an excellent color rendering index (CRI) ≥90. They are relatively stable, with the emission color remaining almost unchanged when the current densities increase from 20 to 260 mA cm^?2. The use of these polymers enables WPLEDs with a superior trade‐off between device efficiency, CRI, and color stability.     

现代显示技术的进展

介绍了几种现代显示技术的发展概况.如:阴极射线管(CRT)、数字光处理技术(DLP)、等离子显示板(PDP)、场发射显示器(FED)、有机发光二极管(OLED)、光栅光阀(GLV)投影显示器、液晶显示系统(LCD)、全色发光二极管(LED)、数字打印全息图(DPH)及视频全息(holovideo)、全息背投屏(holoscreen)、液晶硅(LCOS).对上述几种现代显示技术在结构、原理和技术特点等方面作了比较.特别是对液晶硅显示(LCOS)的结构和原理以及发展趋势和市场走向作了较详细的分析.     

VCSELs与EELs多模弛豫振荡的研究

根据多模速率方程,利用MATLAB提供的SIMULINK软件包对垂直腔面发射激光器(VCSELs)和边发射激光器(EELs)多模弛豫振荡进行了研究。结果表明,与单模情况相比,多模时EELs弛豫振荡频率增大、弛豫和延迟时间缩短,而VCSELs动态特性变化不大。与此同时,在得出VCSELs的单模工作、高速调制以及提高偏置电流或自发辐射因子可改善两类器件动态特性等结论外还看到,VCSELs边模抑制比(SMSR)随偏置电流变化率高于EELs;自发辐射因子增大时,边模强度同比例增大、主模强度减小,利用微腔效应有效控制自发辐射因子可以优化VCSELs的单模特性。     

MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.     

某些双原子氟化物分子激光发射谱的近似计算

本文给出了双原子氟化物分子激光发射谱的经验公式,并作了验证,也估算了其它几种介质可能的激光发射谱分别为98.07nm/HeF,118.29nm/NeF,457.44nm/RnF,和683.99nm/AtF。     

染料放大器的ASE和飞秒脉冲放大

分析了染料放大器(DLA)的放大的自发辐射(ASE)的分布、上能级以及三重态粒子数分布。用数学方法模拟计算了泵浦作用时非饱和情形下染料分子的储能和飞秒脉冲的放大。我们认为,设计一个染料放大器必须考虑三重态积累对分子储能的影响。用调Q倍频Nd∶YAG脉冲同步泵浦染料二级放大器放大飞秒脉冲,得到的第一、二级放大倍数分别为1000和60,对于第一级放大,计算结果与实验结果基本相符。     

亚稳态惰性原子与SOCl_2传能反应产物SO(A)的发射光谱和强度分析

本文在流动余辉装置上,利用亚稳态惰性气体原子[He(2~3S)、Ne(~3P_(0,2))、Ar(~3P_(0,2))]与SOCl_2的专能反应,在(230-430nm)波段观察到了产物的发射谱,光谱归属为自由基SO(A~3∏_(2,1,0)→X~3∑~-)的跃迁。对光谱强度分析表明:SO(A→X)的偶极跃迁矩Re随核间距明显地变化。通过拟合,找出了这一变化的关系。另外,本文还计算了SO(A~3∏_0→X~3∑~-)跃迁的Franck-Condon因子。     

真空微电子三极管几何参数的设计考虑

真空微电子三极管是近年来兴起与发展的真空微电子学中的一类重要器件。本文从真空微三极管的工作特性出发,分析了这类器件中所需考虑的几何参数和工作特性的关系,并给出了一些理论和实验公式,为今后的设计提供一些参考。     

低气压放电灯阴极发射特性的测试与研究

用射频噪声法测出了低气压放电灯(荧光灯、紧凑型节能灯、紫外杀菌灯等)阴极的零场发射电流,进而研究了阴极温度和阴极零场发射之间的变化规律,最后,得到了一种比较简单、方便、实用的测试阴极发射特性的方法。     

真空微二极管发射特性的解析解

通过保角变换方法，对具有椭圆锥形发射体的真空微电子二极管进行了研究，求得了二极管区域内电位分布和电场分布的解析表达式，进而得到了电场强度和场致发射电流密度与尖端曲率之间的关系．