Liquid phase sintering and characterization of SiC ceramics

The present study focuses on the sintering of silicon carbide-based ceramics (SiC) by liquid phase sintering (LPS) followed by characterization of the produced ceramics. AlN/Re₂O₃ mixtures were used as additives in the LPS process. In the first step, the LPS-SiC materials were produced in a graphite resistance furnace in the form of discs at different temperatures. The conditions with the best results regarding real density and relative density were taken as reference for sintering in the form of prismatic bars. In the second step, these samples were evaluated regarding fracture toughness (K_IC), by the Single Edge V Notch Beam – SEVNB – method, and flexural strength. K_IC behavior was evaluated according to the depth and curvature radius of the notches. Reliable K_IC values were presented when the ceramic displayed a small curvature radius at the notch tip. When the radius was large, it did not maintain the square root singularity of the notch tip. Tests were carried out to determine K_IC values in atmospheric air and water. K_IC results were lower in water than air, with a decrease ranging between 2.56% and 11.26%. The observations indicated a direct grain size correlation between K_IC values and fracture strength of the SiC ceramics.     

RF磁控溅射制备钛酸锶钡BST纳米薄膜

钛酸锶钡(BST)薄膜作为一种高K介质材料在微电子和微机电系统等领域具有广阔的应用前景,人们已对BST薄膜的制备工艺技术和介电性能进行了大量的研究。BST纳米薄膜的制备工艺直接影响和决定着薄膜的介电性能(介电常数、漏电流密度、介电强度等)。对RF磁控反应溅射制备BST纳米薄膜的工艺技术进行了综述。从溅射靶的制备、溅射工艺参数的优化、热处理、薄膜组分的控制,及制备工艺对介电性能的影响等方面,对现有研究成果进行了较全面的总结。     

低插损窄带型10.7MHz压电陶瓷滤波器的研制

介绍了低插损窄带型10.7 MHz压电陶瓷滤波器的一种设计制作方法。结合压电陶瓷能陷模理论,通过对滤波器分割电极设计和制造工艺控制技术的研究,强调了工艺控制的重要性。产品达到日本村田同类产品水平,对国产化窄带型10.7 MHz压电陶瓷滤波器的研发和生产具有十分重要的意义。认为选用高Qm值压电陶瓷材料、分割电极和耦合电容的设计、焊接和点蜡工艺的控制等是研制低插损窄带型10.7 MHz压电陶瓷滤波器的重点。     

基于压电陶瓷动态信息的结构裂纹识别方法

利用压电陶瓷的动态特性和压电系统的动态信息,对铝梁的裂纹损伤进行了分析研究。随着梁裂纹尺寸的增加,压电陶瓷片的导钠幅值下降,且系统固有频率减小。利用导钠幅值的变化和系统的动态信息,可以对裂纹的位置和尺寸大小进行识别。实验证明该方法的有效性。     

片式多层陶瓷微波谐振器

介绍了片式陶瓷微波谐振器的工艺过程、谐振器的结构以及结构对谐振器参数的影响,谐振器与外电路的耦合采用耦合间隙的方法与谐振单元在同一层内实现,这种新结构既可给制备工艺带来方便,又可减少工艺所带来的误差。用多层陶瓷工艺技术,用高介电常数、低温烧结微波陶瓷实现了中心频率为1GHz,有载品质因数大于80的试验双端口多层微波谐振器。微波谐振器体积小,整个谐振器的尺寸为7mm×2mm×1mm,适用于表面贴装技术。     

Fatigue crack growth in SiC particulates reinforced Al matrix graded composite

The SiC/Al graded composite was fabricated by powder metallurgy processing and its fatigue crack growth behavior was studied. The volume percentage of SiC particulates was distributed from 5 to 30% layer by layer on the cross section. Since the aluminium was dissolved together, there was no evident interface between the two layers with different volume fraction of SiC particulates. Fatigue crack growth was in direction of from 5 to 30% SiC layers under sinusoidal wave-form. The retardation of fatigue crack growth was found when crack propagated from low volume fraction of SiC to high volume fraction of SiC. The crack deflection and branching between two layers were observed, which decreased crack growth rates. In view of crack tip driving force, the plasticity mismatch between the layers shielded crack tip driving force, i.e. decreased the effective J-integral at the tip of the crack as the plastic zone of the crack tip spread from the weaker material into the stronger material.     

陶瓷表面化学镀的前处理工艺新进展

综述了非金属表面化学镀前处理工艺的现状和发展，对陶瓷化学镀的粗化和活化工艺的新进展进行了评述，侧重讨论了离子型、胶体钯型、浆料型、分子自组装吸附钯型、贱金属型活化工艺特点和进展，并展望了今后发展方向。     

Evaluation of the Properties of Si3N4/Si3N4 Joint Brazed Using a Filler Alloy Containing Pd

Si3N4 ceramic was jointed to itself using a filler alloy of Cu76.5Pd8.5Ti15, and the mechanical properties of the jointwere measured and analyzed. By using a filler alloy of Cu76.5Pd8.5Ti15, the SisN4/SisN4 joints were obtained bybrazing at 1373～1473 K f     

微波陶瓷基印制板制造工艺性研究

对微波陶瓷基印制板的制造工艺流程进行了简单的介绍,对所采用的工艺技术的有效性进行了较为详细的论述。     

晶须取向对SiCw/6061Al复合材料热压缩变形行为的影响

采用SEM 和 Magiscan-2A 图像分析系统研究了晶须取向对SiCw/6061Al复合材料在300℃压缩变形行为的影响.结果表明:晶须取向影响着晶须折断程度和转动角度; 随着晶须取向角的增加,晶须转动和折断行为所导致的软化效果下降.同时晶须取向也影响复合材料的热压缩应力-应变曲线的形状.在热压缩变形过程中,晶须取向角为0°和30°的复合材料表现出明显应变软化现象, 晶须取向角为45°的复合材料无明显软化现象.晶须取向角为90℃的复合材料表现出应变硬化现象.