Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

We report on a piezoelectric response investigation of AlGaN/GaN circular high electron mobility transistor (C-HEMT) based ring gate capacitor as a new stress sensor device to be potentially applied for dynamic high-pressure sensing. A ring gate capacitor of C-HEMT with an additional ZnO gate interfacial layer was used to measure the changes in the piezoelectric charge induced directly by the variation of piezoelectric polarization of both gate piezoelectric layers (AlGaN, ZnO) for harmonic loading at different excitation frequences. Our experimental results show that about 10 nm thick piezoelectric ZnO layer grown on ring gate/AlGaN interface of C-HEMT can yield almost a 60% increase in the piezoelectric detection sensitivity of the device due to its higher piezoelectric coefficient. A three-dimensional CoventorWare simulation is carried out to confirm the increase in the measured piezoelectric response of ZnO based ring gate capacitor of C-HEMT.     

Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection

Epitaxially grown single layer and multi layer graphene on SiC devices were fabricated and compared for response towards NO₂. Due to electron donation from SiC, single layer graphene is n-type with a very low carrier concentration. The choice of substrate is demonstrated to enable tailoring of the electronic properties of graphene, with a SiC substrate realising simple resistive devices tuned for extremely sensitive NO₂ detection. The gas exposed uppermost layer of the multi layer device is screened from the SiC by the intermediate layers leading to a p-type nature with a higher concentration of charge carriers and therefore, a lower gas response. The single layer graphene device is thought to undergo an n-p transition upon exposure to increasing concentrations of NO₂ indicated by a change in response direction. This transition is likely to be due to the transfer of electrons to NO₂ making holes the majority carriers.     

紫外光电探测器研制

采用宽带隙半导体材料SiC,进行紫外光电探测器的制备。基于机械性能和化学稳定性考虑,增透抗反膜的制备采用SiO2＋Al2O3工艺,同时对其表面钝化层和增透抗反膜工艺进行了研究讨论。     

高效好氧生物技术及其在污水处理中的应用

近年来好氧生物技术得到了不断的发展,出现许多高效的、可处理难降解甚至有毒废水的好氧生物技术。本文主要综述了3种从不同方面实现高效降解有机废水的好氧生物处理技术:移动床生物膜反应器、加压曝气技术以及膜生物反应器在废水处理中的应用进展,并概括了各自的优缺点,最后对这3种生物工艺的发展进行了展望。     

涂层对CVD法SiC纤维拉伸断裂行为的影响

针对SiC纤维的表面缺陷引起的低强度断裂问题,采用CVD技术对SiC纤维进行了C涂层.利用了XRD和SEM分别对无C涂层SiC纤维和C涂层SiC纤维的晶体结构和表面形貌进行了表征,对比了其抗拉强度.结果表明SiC由-SiC晶体组成,在(111)晶面方向上择优生长.涂C后SiC纤维表面光滑致密,表面缺陷较少,有效地降低了表面缺陷深度a值;涂C后SiC纤维的拉伸强度比无C涂层的抗拉强度增加了620MPa.因此,C涂层可以降低SiC纤维的表面缺陷,从而使SiC纤维的抗拉强度增加到2870MPa.     

倾斜型纤维模块对耐火衬里性能的影响

蒸汽过热炉耐火衬里操作时普遍存在缺陷,分析了缺陷产生的原因,并采用倾斜型纤维模块对耐火衬里的整体结构进行了改进设计．通过对传热模型的数值计算,证明此改进设计可行,改进后的结构能够提高过热炉的热效率．     

耐火材料制品的温度和热应力分析研究

针对两种典型耐火材料制品,利用有限元分析软件,使用APDL语言编写程序,研究了其钢包和中间包的温度和热应力分布规律.同时对其结构进行了优化,优化后的效果明显,有效地提高了其使用寿命.     

Oxidation Protective Multilayer CVD SiC Coatings Modified by a Graphitic B-C Interlayer for 3D C/SiC Composite

A layered graphitic CVD B-C coating was introduced between two CVD SiC coating layers. Microstructure and chemical characterization of the CVD B-C and the hybrid SiC/B-C/SiC multilayer coating was performed using SEM, EDS, XPS and XRD. Oxidation protection ability of the coating for the C/SiC composite was studied using a thermogravimetric analyzer (TGA) in the isothermal mode and by measuring residual flexural strength. The layered graphitic CVD B-C coating middle layer reduced the maximum crack width in the CVD SiC coating. The hybrid SiC/B-C/SiC multilayer coating provided a better oxidation protection for C/SiC composite than a three layer CVD SiC coating due to coating crack control and sealing effects at temperatures up to 1,300°C for 900 min.     

Sol–gel alumina environmental barrier coatings for SiC grit

SiO₂ surface film is insufficient to protect SiC from the oxidation at widely varying partial pressures of oxygen, in particular in the presence of water vapor (e.g. in gas turbines) and also in other environments, e.g. during brazing for hard “tipping” of turbine blades. This work demonstrates that sol–gel alumina, coated on 0.5 mm coarse SiC grit, may form an acceptable, up to 10 μm thick “environmental barrier coating” EBC for some of these applications. The sol–gel has advantages over other methods (such as CVD) is the simplicity and low cost. We have used NH₄OH pre-treatment to hydroxylate surface of SiC prior to applying alumina coating. Such modified SiC/SiO₂ surface helped to deposit the positively charged alumina sol, and thus allowed to build thick coatings on the SiC grit. There is some indication that these coatings partially convert to mullite through reaction at the interface with the native silica on SiC. Oxidation resistance tests at 1200 °C were performed to show effectiveness of such coated SiC grit.     

SiC颗粒增强铝基复合材料的真空电子束焊接

针对SiCp/6061Al型复合材料进行了真空电子束焊接的初步探讨.试验结果表明:电子束电流越大,熔深越深;焊接速度越快,熔深越小;焊接过程中SiC颗粒会与液态铝发生界面反应,生成脆相Al4C3;镁元素的气化易导致焊缝气孔的生成.