Pre-treatment for the extraction of manganese from mangano-argentiferous refractory tailings

A novel process was used to extract manganese from minerals that are refractory to cyanidation and ammonium thiosulphate. These minerals, known as mangano-argentiferous compounds, are principally composed of manganese, silver, and iron and exhibit low recovery. The mineral of interest was obtained from the leaching tails procured in Monte del Favor, Hostotipaquillo, Jalisco, Mexico. The tailings were characterised by X-ray powder diffraction (XRD), atomic absorption, and energy dispersive X-ray spectroscopy (EDS) microanalysis. After mineralogical characterisation, the tailings were screened through a mesh (mesh number 100, 0.147?mm); later, they were subjected to a reductive leaching process, where the solid–liquid ratio was varied from 2:1 to 10:1. A 5:1 ratio yielded the highest manganese content. With sulphuric acid and sodium sulphite as the reducing agents, 96.05% of Mn could be extracted during the first 3?h, with a head grade of 3.58% and an acid consumption of 49.31?kg/t. The sulphite consumption was found to be 9.81?kg/t.     

基于多物理场耦合的U3Si2燃料与双层SiC包壳组合的轻水堆燃料性能分析

基于COMSOL平台开发了一套基于多物理场全耦合的燃料性能分析程序,并通过径向功率分布模型对比验证了该程序的正确性与准确性;然后进一步分析了U₃Si₂燃料与双层SiC包壳组合、U₃Si₂燃料与锆合金包壳组合在反应堆正常运行工况下的性能,并与UO₂燃料与锆合金的组合进行了对比分析。计算结果发现U₃Si₂燃料与锆合金包壳组合相比UO₂燃料与锆合金的组合具有更低的燃料中心温度、裂变气体释放量及内压,但气隙闭合时间会提前;而U₃Si₂燃料与双层SiC包壳的组合相比U₃Si₂燃料与锆合金的组合具有更高的燃料中心温度、更大的裂变气体释放量及内压,且随着燃耗的增加,其燃料中心温度大幅增加,与锆合金包壳相比,双层SiC包壳能够有效延迟气隙闭合,缓解燃料与包壳的力学相互作用。      

炉内成球法制备SiC空心陶瓷微球

采用干凝胶法,以聚碳硅烷（PCS）为原料,通过炉内成球技术制备了SiC空心陶瓷微球。并利用TG、IR、SEM、XRD等方法对陶瓷微球进行了成键结构、表面形貌等分析,讨论了有机聚合物的陶瓷化过程机理。结果表明,干凝胶成球技术能利用经纯化处理的聚碳硅烷在500~600 ℃下得到SiC空心陶瓷微球,采用乙醇作为发泡剂可使PCS凝胶粒子得到良好发泡效果,提高载气中氦气含量至50%~80%可提高干凝胶粒子在吸热阶段的升温速率,微球经辐照后在850 ℃下碳化生成以β-SiC为主要相结构的球壳,球壳具有较好的表面平整度。     

In‐plane shear damage behaviours of 2D needled C/SiC composites

Understanding the in‐plane shear behaviour of composites is essential to establish the design basis for practical applications. This study aims to investigate the shear damage behaviours of 2D needled C/SiC composites by various characterization techniques. The effect of layer arrangement on shear modulus and strength was discussed via shear stress‐strain responses. The shear strain field evolution and uniformity variation were studied by digital image correlation. It shows that the uniformity of shear strain field changes with the shear load, and the shear strain field evolution consist of 5 stages. The electrical resistivity measurement results indicate that structural deformation and damage evolution caused the electrical resistivity change. Furthermore, the damage evolution has a double effect on the electrical resistivity variation. The acoustic emission monitoring shows that the shear damage evolution is a 3‐stage nonlinear process before failure. The shear damages were categorized via acoustic characteristics. Besides, the postfailure behaviours were also discussed in this study.     

有机分散介质中纳米SiC粉体稳定悬浊液的制备

纳米粉体的稳定分散是制备微观结构均匀、缺陷少的纳米复相陶瓷坯体的关键。本文中采用Zeta电位、粒度分析、SEM等测试技术分析了超声震荡和HF酸洗对SiC纳米粉体的影响;对比研究了乙醇、乙二醇以及75%乙醇和25%乙二醇混合液作为分散介质,聚乙二醇为分散剂时纳米SiC粉体在不同pH下的分散稳定性,确定了粉体最佳超声震荡的最佳时间;探讨了酸洗的作用;并在乙二醇中,以1%PEG为分散剂,pH=10条件下获得了纳米碳化硅粉体的高稳定分散悬浮液。     

Characteristics of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epilayer

Dislocation “half-loop arrays” (HLAs) in 4H-SiC homo-epilayers are studied by molten KOH etching and atomic force microscopy (AFM). It is found that the dislocation half-loops in an array exist at different depths in the epilayer, and they are aligned roughly but not exactly perpendicular to the off-cut direction. These results indicate that the dislocation half-loops in an array are not formed simultaneously, but the array extends by generation of new half-loops during growth. It is also demonstrated that the HLAs can be artificially induced by creating strain in the material, followed by annealing.     

层状可加工陶瓷Ti3SiC2自蔓延高温合成反应机理的研究

采用燃烧波淬熄法,以Ti粉、Si粉和C粉为原料研究了层状可加工陶瓷Ti3SiC2在自蔓延高温合成(SHS)中的反应机理.淬熄试样中保留未反应区、反应区和已反应区,用扫描电子显微镜观察燃烧反应中显微组织的转变过程,用能谱仪分析各微区的成分变化,并通过差热分析(DSC-TGA)和XRD分析考察了从600℃到1500℃ Ti-C-Si系统的反应合成过程和相形成规律.结果表明:层状可加工陶瓷Ti3SiC2自蔓延高温合成的机理为溶解-析出机制,Ti粉与Si粉的固态扩散导致低熔点Ti-Si溶液形成,Ti、Si、C粉粒逐渐向Ti-Si溶液中溶解,当溶液中的Ti、Si、C浓度饱和时,从中析出TiC、SiC颗粒,最后形成最终产物Ti3SiC2.     

延长回转窑窑头锁口耐材寿命的措施

回转窑窑头锁口耐材使用寿命短,直接影响到链篦机-回转窑球团生产线的作业率。通过长期的观察和分析,找出了影响窑头锁口耐材使用寿命的原因,并采取了相应的改造措施,使窑头锁口耐材的使用寿命由原来的6个月延长到18个月,为球团生产线的顺行、稳产提供了保障。     

脉冲ArF准分子激光淀积SiC/Si(100)薄膜的最佳晶化温度及光致发光

用脉冲 Ar F准分子激光熔蚀 Si C陶瓷靶 ,在 80 0℃ Si(10 0 )衬底上淀积 Si C薄膜 ,经不同温度真空 (10 - 3Pa)退火后 ,用 FTIR、XRD、TEM、XPS、PL 谱等分析方法 ,研究了薄膜最佳晶化温度及表面形态、结构、组成 ,并对在最佳退火温度处理后的样品进行了化学态、微结构及光致发光的研究 .结果表明 ,在 Si(10 0 )上 80 0℃淀积的样品为非晶Si C薄膜 .经 85 0— 10 5 0℃不同温度真空退火后 ,Si C薄膜经非晶核化 -长大过程 ,在 980℃完成最佳晶化 .随退火温度的变化 ,薄膜中可能存在 3C- Si C与 6 H- Si C的竞争生长或 /和 3C- Si C相的长、消 (最佳温度