激光涂覆技术的实验研究

叙述了有关激光这年来国内外的研究动态;我们采用２ｋＷ横流ＣＯ２激光器在普通低碳钢表面上涂覆镍基自熔合金粉末,初步探讨了有关界面相熔的形成原因、影响因素及解决办法;报激光涂覆过程中各种工艺参数相互关系及对溶敷层稀释度的影响,确定了较合理的工艺参数,该工艺对机械制造业、金属表面硬化等均有实用价值。     

新型廉价CO2激光热处理涂料的研究

报道了一种新型廉价CO2激光热处理涂料,通过对涂料的红外吸收谱、粘合剂种类对涂料红外吸收谱的影响及激光热处理区在处理前后化学成分变化的实验研究,得到了一些有用的结论,经过实际的激光热处理加工应用,证明这种涂料具有吸收率高、价格低廉、无毒、无害、无污染、易清除等优点,完全可以满足激光热处理加工的需要.     

2.25Cr-1Mo钢焊接接头蠕变后焊缝中 M6C碳化物的析出位向关系

本文用透射电镜研究了２．２５Ｃｒ－１Ｍｏ钢焊接接头蠕变后焊缝中的Ｍ６Ｃ碳化物。结果表明,高温长期蠕变促进了Ｍ６Ｃ的析出长大,从焊缝内析出的Ｍ６Ｃ与α－Ｆｅ铁素体间存在Ｎ－Ｗ位向关系,即：（１１１）Ｍ６Ｃ∥（１１０）ａ「０１１）Ｍ６Ｃ∥「００１」ａ。文中还讨论分析了其他两种取向关系：（１１１）Ｍ６Ｃ∥（１１０）ａ;「１０１」Ｍ６Ｃ∥「１１１「ａ及（１１１）Ｍ６Ｃ∥（１１０）ａ;「１１２」Ｍ６Ｃ∥「１     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

Optimization of black oxide coating thickness as an adhesion promoter for copper substrate in plastic integrated-circuit packages

Copper-oxide coating applied onto the copper substrate has emerged as an alternative to metallic coatings to improve adhesion with polymeric adhesives and molding compounds. The interfacial-bond strengths between the black oxide-coated Cu substrate and epoxy-based, glob-top resin were measured in button-shear tests, and the failure mechanisms were identified from the fracture-surface examination. The emphasis was to establish the correlation between the coating thickness, the surface roughness, and the interfacial adhesion with respect to treatment time. It was found that at the initial stage of treatment a thin layer of flat, cuprous oxide developed, above which fibrillar-cupric oxide was formed with further treatment until saturation with densified fibrils at about 150 sec. The interfacial-bond strength between the oxide-coated copper substrate and glob-top resin increased gradually with increasing treatment time, until the bond strength reached a plateau constant after a treatment for about 150 sec. There was a functional similarity between the oxide thickness, the surface roughness, and the interface-bond strength with respect to treatment time. A treatment time of 150 sec is considered an optimal condition that can impart the highest interface adhesion.     

Low-resistance polysilicon process in contact application for high density devices

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H₂-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device application.     

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.     

Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector

The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.     

激光合金化Si3N4/石墨复合涂层及其摩擦学性能研究

在 4 5钢表面激光合金化Si3 N4/石墨复合涂层 ,对合金化层的微观组织结构、显微硬度、元素含量和分布、摩擦磨损性能等进行了分析和实验研究 ,并据此对预涂层材料组成、配比和激光合金化工艺参数进行了优化。结果表明 :激光合金化Si3 N4/石墨复合材料能够获得组织均匀细密、硬度显著提高的合金化层。并且在干摩擦条件下 ,减小了金属表面的摩擦系数 ,提高了耐磨性和抗粘着的能力 ,整个摩擦过程也很稳定     

化学复合镀层激光处理研究

研究了激光处理对Ni-P -SiC化学复合镀层的影响。借助于扫描电镜、能谱仪、X射线衍射、显微硬度计等设备对激光处理后复合镀层的表面形貌、组织结构及性能进行了综合分析。结果表明 ,对复合镀层进行激光处理可以获得与炉内加热同样的镀层硬度 ,且当激光功率 4 0 0W ,扫描速度 1.5m /min时 ,镀层硬度高于炉内加热的硬度