Corrosion behaviour of low-Si alloyed steels in neutral reducing conditions at 90 °C

Electrochemical investigations on low-Si alloyed steels with Si content ranging from 0.25 to 3.2 wt.% were carried out in a 0.1 M NaCl borate-buffered solution (pH 8.4) in reducing conditions at 90 °C. Silicon as an alloying element was proved to degrade at first the steel ability to passivate. For longer immersion times, protective effects developed more efficiently on the steel containing 3.2 wt.% silicon. Passive layers electrochemically formed in the transpassive domain on the steel containing 3.2% Si were shown to be significantly different from those grown at rest potential.     

High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route

Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl₄, (C₅H₅)₂Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed.     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

Surface electronic states in metal-porous silicon-silicon structures

The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of E_v+0.81 eV at the PS layer growing to 90 nm wide.     

The influence of silicon on carbon redistribution in steel weldments

Carbon redistribution was measured in ST1/ST2 Fe-2.5Si-0.8C/Fe-0.32Si-0.49C steel weldments in the temperature range 500–1000 °C. At the temperatures where austenite exists, carbon diffuses from ST1 into ST2; when ferrite is present, the diffusion flow reverses from ST2 into ST1. This effect is attributed to the degree of the silicon influence on the graphite precipitation and carbon activity in ST1 and ST2 steels. The opposite signs of the activity gradients in austenite and ferrite cause the reversal of the carbon diffusion when the annealing temperature is changed from the austenite to the ferrite temperature region. The carbon diffusion coefficients D_C and the thermodynamic interaction coefficients ε_C^Si in austenite have been assessed from the experimental data for ST1 and ST2 steels.     

Micromachined silicon bolometers as detectors of soft X-ray, ultraviolet, visible and infrared radiation

This paper presents the development of micromachined thin-film silicon microbolometers which can be used for detection of soft X-ray, UV, visible and infrared radiation. The detector structure is a 1 μm thick polysilicon/Si₃N₄ membrane suspended over a cavity. This structure has been obtained by anisotropic etching of silicon with a previously deposited polysilicon/Si₃N₄ sandwich. Alternatively, porous silicon has been used as the sacrificial layer. Devices have been characterized. Good values of the voltage responsivity and detectivity have been obtained.     

Comparison between normal and reverse thin crystalline silicon solar cells

The newly developed ingot growing techniques, as the three-grain and the columnar multigrain ingot processes, are now offering the possibility of slicing thinner wafers (≤ 100 μm). In this paper we present the results obtained on p type large area (≥ 100 cm²) and 100 μm thick wafers by using both conventional and reverse cell manufacturing technologies.The conventional cells are provided with aluminium or boron BSF plus screen-printed silver mirror or a silver-aluminium net; the reverse cells have a FSF and the deep back junction completely covered by a screen-printed or CVD silver layer.The constructing parameters have been chosen on the base of one and two dimensions modeling and both raw material and devices have been completely characterized.This work shows that very thin wafers do not introduce serious problems for the conventional manufacturing of solar cells. The efficiencies of the normal and of the reverse cells are found to be comparable and are of the same order than those of thicker cells, however at a significant lower cost. The main obtained result has to be related to the demonstration of a cell manufacturing feasibility starting from very thin wafers.