无机杂化纳米晶最新研究进展

无机杂化纳米晶是2种或多种无机材料纳米晶通过界面外延而获得的纳米系统.综述了无机杂化纳米晶研究的国内外最新发展,重点讨论了现有各制备方法的关键控制因素以及组元间的作用机制对产物性能的影响,展望了该领域今后的研究方向.     

Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition

We report on the effect of thermal annealing on the structural and mechanical properties of amorphous SiC thin films prepared by means of a polymer-source chemical vapor deposition process. The chemical bondings of the a-SiC:H films were systematically examined by means of Fourier transform infrared spectroscopy (FTIR). The film composition was measured by X-ray photoelectron spectroscopy, while X-ray reflectivity measurements were used to account for the film density variations caused by the post-annealing treatments over the 750-1200 °C range. In addition, their mechanical properties (hardness and Young's modulus) were investigated by using the nano-indentation technique. FTIR measurements revealed that not only the intensity of a-SiC absorption band linearly increases but also its position is found to shift to a higher wave number as a result of annealing. In addition, the bond density of Si―C is found to increase from (101.6-224.5) × 10²¹ bond·cm^− 3 accompanied by a decrease of Si―H bond density from (2.58-0.46)× 10²¹ bond·cm^− 3 as a result of increasing the annealing temperature (T_a) from 750 to 1200 °C. Annealing-induced film densification is confirmed, as the a-SiC film density is found to increase from 2.36 to ∼ 2.75 g/cm^− 3 when T_a is raised from 750 to 1200 °C. In addition, as T_a is increased from 750 to 1200 °C, both hardness and Young's modulus are found to increase from 15.5 to 17.6 GPa and 155 to 178 GPa, respectively. Our results confirm the previously established linear correlation between the mechanical properties of the a-SiC films and their bond densities.     

Polycrystalline silicon films on glass grown by amorphous-liquid-crystalline transition at temperatures below 330 °C

An approach to deposit polycrystalline silicon layers on amorphous substrates is presented. It is shown that metastable amorphous silicon can be transformed into its more stable microcrystalline structure at a temperature below 330 °C via an intermediate liquid solution stage. In particular, the interaction of liquid indium nanodroplets in contact with amorphous silicon is shown to lead to the formation of circular polycrystalline domains. Crystallinity of these domains is analyzed by micro-Raman spectroscopy. The droplet size necessary for the onset of crystallization is related to the temperature of the film. Full coverage of the substrate with microcrystalline silicon has been obtained at 320 °C within less than one hour. These films might act as seeding layers for further enlargement by steady-state liquid phase epitaxy.     

Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high-resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO₂ surface to the Si substrate and interface roughness were addressed. On the basis of these findings, the optical model that addresses the characteristics of plasma-damaged Si surfaces is given for ellipsometric analysis. The proposed model includes an interface layer modeled as a mixture of SiO₂ and Si phases. A part of the interface layer could not be removed by wet-etching, signifying the distinct features of the interface layer that are difficult to remove. The proposed model is anticipated to be practical for in-line monitoring of plasma-induced damage.     

A novel tuning fork gyroscope with high Q-factors working at atmospheric pressure

In this paper, we report the design and fabrication of a novel micromachined electro-magnetically driven tuning fork type gyroscope with bar structure proof masses working at atmospheric pressure. The applied angular rate is sensed by detecting the differential change of capacitance between the bar structure electrodes and the fixed electrodes on the glass substrate. Instead of common squeeze-film damping, slide-film damping in the gap between proof masses and glass substrate plays a dominant role, which enables it to achieve high Q-factors and thus eliminate vacuum packaging. The measured Q-factors for driving and sensing modes are 965 and 716, respectively. The sensor obtained a sensitivity of 6 mV/°/s and a non-linearity of less than 0.5%.The work is sponsored by the Major State Basic Research and Development Program Integrated Micro-Optical-Electro-Mechanical System (G1999033101).     

溶剂热法制备立方钛酸钡纳米晶

将钛酸丁酯和适量乙醇混匀后,与氯化钡水溶液在溶剂热条件下反应制备立方钛酸钡纳米晶。结果表明:以KOH为矿化剂,r(Ba:Ti)为1.1,φ(乙醇)为25.0%和150℃反应12h,可得平均粒径为60nm左右、分散性较好的钛酸钡纳米晶。当乙醇用量增大时,产物的粒径减小,分散性降低;随着r(Ba:Ti)的增大,产物粒径减小。当r(Ba:Ti)为1.6时,产物的平均粒径可减小至35nm左右;矿化剂的种类、反应温度和反应时间对产物的形貌及晶体结构没有影响。     

非过渡金属催化芳香二炔和二硅烷基苯制备聚(硅苯-芳炔)树脂

以芳香基双炔和1,4-二(二甲基硅烷基)苯为原料,乙二醇二甲醚(DME)为溶剂,NaO H为催化剂,空气氛围下,一步反应制备得到含硅芳炔树脂(SPAR).并进一步探讨了催化剂、反应溶剂、温度、时间对聚合反应的影响.通过凝胶渗透色谱(GPC)、红外光谱、核磁分析确定产物的分子量和化学结构.实验结果表明:使用20 mol％...     

An on-chip micro-friction tester for tribology research of silicon based MEMS devices

An on-chip micro-tribotester has been developed to investigate the friction and wear properties on side contacting surfaces of single crystal silicon that is most widely used in usual microelectromechanical systems actuators. The device is fabricated with standard bulk silicon process and bonding technology based on parameters that have been theoretically calculated to get the stiffness and friction forces. In this device, two comb shuttles are used. One comb shuttle is used to contact the friction surfaces under a certain normal load. The other comb shuttle moves back and forth to provide relative motion between the two friction surfaces. The tested two surfaces are the top surface of an anchor with rounded end and the lateral surface of a beam that has been connected to the two comb shuttles. Tribology experiments on the etched silicon surfaces that are side contacted have been carried out. Friction coefficients testing results suggest that dynamic friction coefficient is about 0.31–0.33 and the obtained static friction coefficient increases with the decrease of normal force. Wear experiment indicates that oxidation happens between the rubbing surfaces during the course of the testing. Wear debris is collected as agglomerates because of the function of adhesion force and water vapor and the agglomerates that are collected on top and lateral surfaces are of different shapes.     

Characterization of silicon oxynitride films using ion beam analysis techniques

Heavy-ion elastic recoil detection analysis (HIERDA) is the ideal technique for quantitative analysis of silicon oxynitride films on silicon because of its unique ability to measure simultaneously all elements of interest (i.e., H, C, N, O and Si), thereby permitting key parameters such as the O/N-ratio to be determined in a single measurement. However, high-energy accelerators suitable for such HIERDA measurements are becoming much less readily available. Hence, the present paper investigates and calibrates an alternative IBA technique for simultaneous O, N and C analysis – namely, the use of (d,p) and (d,) nuclear reactions. Under optimum analysis conditions (850 keV deuterons and 150° detector angle), the Si background level sets a lower detection limit of 1×10¹⁶ nitrogen atoms/cm² and 3×10¹⁵ oxygen atoms/cm². H analysis is carried out separately, using low-energy ERDA and a 2 MeV ⁴He beam. Absolute cross-sections have been obtained for each of the (d,p) and (d,) groups. Comparison with data in the recent Handbook of Modern Ion Beam Materials Analysis shows reasonable agreement (10–15%) for the (d,p) reactions on oxygen and carbon. However, in the case of nitrogen, the measured cross-section values are 70% larger than the Handbook data. Several silicon oxynitride samples have been analyzed, first at UWO using 850 keV deuterons, and subsequently at ANU using HIERDA and a 200 MeV Au beam. The resulting O/N-ratios agree to within 10%. The relative importance of radiation damage effects is briefly discussed.