C/C复合材料Mo - Si-N系抗氧化涂层成分优化

以Mo粉和Si粉为原始粉末,采用熔浆法在C/C复合材料表面原位合成了Si3N4-MoSi2/Si-SiC(MSN)系多层抗氧化涂层,借助扫描电镜和X射线衍射仪等分析手段对涂层的相组成和微观组织进行表征,并对涂层的抗氧化性能进行了初步研究.结果表明:Si浆料中添加适量Al可有效地阻止液态Si渗入C/C基材内部,3%Al-Si涂层具有最好的阻止Si渗入作用;Al含量超过3%时,Si的渗入程度随Al含量的增加而加剧;涂层中MoSi2的理论含量超过50%时,MSN-C/C复合材料1 400℃的抗氧化性能随MoSi2含量的增加而显著下降;MSN30-C/C和MSN40-C/C复合材料均在1 200～1 400℃表现出相近的抗氧化能力,但只有MSN30-C/C复合材料表现出抗1 450℃氧化的能力.     

Interface Characteristics and Laboratory Constructability Tests of Novel Fiber-Reinforced Polymer/Concrete Piles

Conventional pile materials such as steel, concrete, and timber are prone to deterioration for many reasons. Fiber-reinforced polymer (FRP) concrete composites represent an alternative construction material for deep foundations that can eliminate many of the performance disadvantages of traditional piling materials. However, FRP composites present several difficulties related to constructability, and the lack of design tools for their implementation as a foundation element. This paper describes the results of an experimental study on frictional FRP/dense sand interface characteristics and the constructability of FRP–concrete composite piles. An innovative toe driving technique is developed to install the empty FRP shells in the soil and self-consolidating concrete is subsequently cast in them. The experimental program involves interface shear tests on small FRP samples and uplift load tests on large-scale model piles. Two different FRP pile materials with different roughness and a reference steel pile are examined. Static uplift load tests are conducted on different piles installed in soil samples subjected to different confining pressures in the pressure chamber. The results showed that the interface friction for FRP materials compared favorably with conventional steel material. It was shown that toe driving is suitable for installation of FRP piles in dense soils.     

显微组织对ZIRLO锆合金耐腐蚀性的影响

将ZIRLO锆合金样品分别进行1000℃-0.5h／560℃-10h、1000℃-0.5h／冷轧／560℃-10h和750℃-0.5h、750℃-0.5h/560℃-10h、750℃-0.5h／冷轧／560℃-10h的不同处理。用透射电镜观察了它们的显微组织，将它们放入高压釜中，研究了在350℃，16.8MP,0.04M LiOH水溶液中的耐腐蚀性能，结果表明，在本文所有的变形及热处理条件下中，750℃-0.5/冷轧／560℃-10h处理后样品的耐腐蚀性能最好，其原因在于样品经过这样处理后，基体αZr中固溶的Nb含量较低，并获得了纳米尺寸分布的βNb(含Fe)第二相粒子，后者对改善耐腐蚀性能尤为重要。样品在最终560℃加热处理之前的冷轧变形，可以促进βZr分解时的形核，是获得纳米尺寸βNb的必要措施。     

工业热电偶、热电阻自动检定装置

将传统的手动热电偶、热电阻检定装置改进为自动检定装置，实现了自动连续检定。     

复合助烧剂对Gd2O3-UO2芯块微观结构的影响

Gd2O3-UO2可燃毒物燃料是近年来核电站采用较为普遍的可燃毒物之一。本文研究了在Gd2O3-UO2芯块中添加A12O3、TiO2、V2O5各150μg／g的复合助烧剂对芯块微观结构的影响。研究表明添加复合助烧剂后可以降低Gd2O3-UO2芯块的致密化温度．在H2气氛中，1500℃烧结4h后的Gd2O3-UO2芯块的密度可达～97％TD，芯块的闭口孔在1400～1750℃整个温度范围内一直呈下降趋势．烧结温度为1750℃时芯块中气孔数量比1600℃时减少．但单个气孔体积增大．其主要机制可能是小气孔之间发生融合。添加助烧剂后，在1400～1600℃温度之间晶粒生长速度出现不一致．部分晶粒开始迅速生长，晶粒大小分布出现双峰现象；当温度为1750℃时，晶粒大小分布为正态分布．双峰现象消失，平均晶粒尺寸约为25μm。     

The AC losses measurement and analysis of superconducting NbTi CICC for HT-TU superconducting Tokamak

Superconducting TF and PF coils have been measured in SULTAN test facility. Segregated copper strands are included in four NbTi CICC and this is a technical innovation. Two AC losses measurement methods, calorimetric and electromagnetic methods, have been used in the experiments, and a broad frequency range (from 0.05 Hz to 6 Hz) is covered in sample test. The purpose of this experiment was to investigate AC losses of TF and PF CICC conductor including segregated copper and to check the design of PF and TF CICC coated with different resistive barriers (Pb-30Sn-2Sb and Ni plating on NbTi strands).     

电阻器设计研究探讨

阐述了电阻器设计的基本原则，提出根据给定的电阻允差，求出电阻的偏差值，再根据偏差值及材料尺寸偏差，得出材料的加工偏差的方法；此外，电阻器的热耗散可根据本文提供的值进行计算，然后对比一些成熟的产品再作修正，通过多次反复，取得经验，就可以设计出合乎要求的电阻器。     

铅基板栅合金综合性能探析

在Pb-Ca-Sn-Al合金的基础上尝试添加第五种合金元素，测试其电化学性能，并在理论上讨论了其性能提高的原因。     

Thermal characterization of gallium arsenic nitride epilayer on gallium arsenide substrate using pulsed photothermal reflectance technique

Thermal conductivity of gallium arsenic nitride (GaAsN) epilayer on gallium arsenide (GaAs) substrate prepared by molecular beam epitaxy technique was measured using pulsed photothermal reflectance technique. Three-layer model incorporated thermal boundary resistance was applied to extract the thermal properties from the sample's photothermal response. Within the thickness ranging from 20 to 80 nm, no thickness dependent relationship with thermal conductivity of GaAsN epilayer was found, and the average thermal conductivity is approximately 27 W/mK at room temperature. The thermal boundary resistance at the Au/GaAsN interface is in the order of 10⁻⁸ m²K/W.