搅拌摩擦加工制备Al6061/SiC复合材料的耐蚀性研究

目的 利用搅拌摩擦加工技术制备纳米SiC铝基复合材料,研究经过纳米粒子的添加和FSP作用后,其耐腐蚀性能的变化及原因.方法 室温条件下,在3.5％NaCl溶液中,通过电化学阻抗谱和动电位极化曲线对试样的耐腐蚀性能进行检测分析.利用电子背散射衍射技术和透射电镜对3种试样的显微组织进行表征,研究耐腐蚀性能的变化机理.结果 ...     

壳聚糖-Sm~(3+)配合物的制备及其生理活性研究

以壳聚糖、氧化钐为原料,制备了壳聚糖-Sm3 配合物,用紫外、红外、差热等分析手段对其配住效果进行了探讨,并对所制备的配合物做了生理活性试验.结果表明,壳聚糖与Sm3 进行了配位反应,红外光谱反映的信息是壳聚糖分子中参与配位的基团主要是羟基.氨基的配位信息不明显,壳聚糖及其配合物的紫外波长、红外波数及其对应的相关温度随着壳聚糖相对分子量的降低而降低,但壳聚糖与Sm3 形成配合物后,配合物的焓变值却增大,稳定性提高,配位效果增强,且所制备配合物具有优良的抗菌、抑菌等某些生理活性.     

Zr对钐铁合金微结构和相组成的影响

研究了添加0．5at％和1．0at％Zr对钐铁合金微结构和相组成的影响。添加和不添加Zr的Sm-Fe合金相比，发现添加1．0at％Zr可以基本消除铸态组织中的α-Fe，并且能同时减少富钐相。多添加18at％Sm的Sm-Fe合金退火后，仍残留少量的α-Fe，而添加1．0at％Zr的Sm-Fe-Zr合金退火后主相Sm2Fe17以及α-Fe的量没有明显的变化，因此有可能避免过长的均匀化退火过程。     

Proton irradiation damage mechanism of the InAlAs／InGaAs／InAlAs quantum well

InP-based high electron mobility transistors (HEMT) have shown a great potential for national defense and satellite radar in space radiation environment applications. This paper studies the proton radiation damage mechanism of its critical structure InAlAs／InGaAs／InAlAs quantum well. The proton projection range and vacancy defect information are obtained at different incident proton energies of 50keV, 75keV and 200keV by SRIM software. With the increase of proton energy, the proton injection depth is increasing and eventually protons pass through the material layers. Besides, the proton radiation induced vacancy defects numbers around hetero-junction increase first and decrease subsequently, and As vacancies are the main proton radiation induced defects. In addition, non-ionizing energy loss (NIEL) of In_0.52Al_0.48As and In_0.53Ga_0.47As material is computed under different incident proton energies by the analytical model. The change trend of NIEL is identical to the induced vacancy numbers, namely, NIEL first increases and then decreases as the incident proton energy increases. Finally the degrading effect of the radiation-induced As defect is detected in the two-dimensional electron gas in the quantum well, which confirms that the major proton radiation damage mechanism of the quantum well is the induced vacancy defects by NIEL.     

Engineering oxygen vacancy-rich Co3O4 nanowire as high-efficiency and durable bifunctional electrocatalyst for overall alkaline water splitting

A novel kind of vacancy-rich nanowire arrays were prepared by reducing rough Co₃O₄ nanowires with NaBH₄ solution on 3D nickel foam at room temperature for overall water splitting. Co₃O₄/NF treated by NaBH₄ for 10 min was highly active for oxygen evolution reaction (OER) and simultaneously efficient for hydrogen evolution reaction (HER) with the need of the overpotentials of 240 and 132 mV to drive 10 mA·cm^-2 in alkaline media, respectively. Furthermore, the electrocatalysts as both cathode and anode in a two-electrode system presented excellent durability for over 60 h at 10 mA·cm^-2, maintaining the cell voltage of merely 1.63 V. This work provides new methods and ideas for the preparation of transition metal oxide bifunctional electrocatalysts rich in oxygen vacancies.     

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.     

Evaluation of bismuth doped La2-xBixNiO4+δ (x = 0, 0.02 and 0.04) as cathode materials for solid oxide fuel cells

Bismuth doped La_2-xBi_xNiO_4+δ (x = 0, 0.02 and 0.04) oxides are investigated as SOFC cathodes. The effects of Bi doping on the phase structure, thermal expansion, electrical conduction behavior as well as electrochemical performance are studied. All the samples exist as a tetragonal Ruddlesden-Popper structure. Bi-doped LBNO-0.02 and LBNO-0.04 have good chemical and thermal compatibility with LSGM electrolyte. The average TEC over 20–900°С was 13.4 × 10^?6 and 14.2 × 10^?6 K^?1 for LBNO-0.02 and LBNO-0.04, respectively. The electrical conductivity was decreasing with the rise of Bi doping content. EIS measurement indicates Bi doping can decrease the ASR values. At 750 °C, the obtained ASR for LBNO-0.04 is 0.18 Ωcm², which is 56% lower than that of the sample without Bi doping, suggesting Bi doping is beneficial to the electrochemical catalytic activity of LBNO cathodes.     

Negative thermal quenching CsPbBr3 glass-ceramic based on intrinsic radiation and vacancy defect co-induced dual-emission

Halide perovskite glass-ceramic has recently moved into the center of the attention of perovskite research due to their potential for temperature sensing. However, quantum dots glass-ceramic with excellent luminescence performance still needs to be combined with rare-earth (RE) ions to accurately measure temperature. In this work, a novel non-RE doped dual-emission (460 nm and 512 nm) CsPbBr₃ quantum dots was obtained in telluride glass via the friction crystallization method, where 512 nm was derived from intrinsic luminescence of quantum dots, and 460 nm was originated from thermally induced bromine vacancy, which can be used for temperature sensing. Fluorescence intensity ratio results indicate that the relative sensitivity of dual-emission could reach 5.6 % K^?1 at 323 K. The discovery of non-RE doped CsPbBr₃ QDs glass-ceramic with negative thermal quenching uncovers a new optional sensing glass material that surpass traditional RE-doped QDs glass by their tunability and sensitivity.     

Defect engineering of ZnO: Review on oxygen and zinc vacancies

ZnO is an important material which has been widely applied in photodetector, catalyst, gas sensor, field emitter, etc. Yet, its inability to absorb visible light, poor charge transport, and low conductivity limit the application of these devices. Recently, it was discovered that introduction of defects such as oxygen and zinc vacancies into ZnO can effectively improve the existing properties or lead to new and unexpected yet highly desirable characteristics. Herein, we present a systematic review on the available approaches to synthesize oxygen- and/or zinc-deficient ZnO with emphasis on their chemical, structural, and electrical particularities. Furthermore, applications of defective ZnO in various nanoscale devices are discussed in terms of their functionality, reliability, and performance. Finally, we summarize major challenges and offer perspectives for further research in this field. We hope that this review would make a valuable contribution to broaden the knowledge of defective ZnO.     

Oxygen vacancy-induced short-range ordering as a sole mechanism for enhanced magnetism of spinel ZnFe2O4 prepared via a one-step treatment

Despite being difficult to identify, extremely dilute oxygen vacancies have been widely reported to play an important role in enhancing magnetism in ZnFe₂O₄. The mechanisms underlying this enhanced magnetism have not been well understood for a long time and remain controversial because the formation of oxygen vacancy-rich ZnFe₂O₄ can be accompanied by changes in the chemical/physical characteristics, especially the composition, particle size, surface morphology and cation distribution, which can significantly affect the magnetization. An open and important question is whether and to what extent the enhanced magnetization can be attributed only to oxygen vacancies. In this study, the relationship between the magnetization and oxygen vacancies in ZnFe₂O₄ was definitively determined by using a carefully designed “shake-and-heat” treatment to prepare vacancy-rich samples while keeping the other crystal/surface parameters constant. Compared to the nearly vacancy-free paramagnetism samples, the vacancy-rich samples exhibited a higher magnetization of approximately 5 emu/g at both 300 K and 2 K. The Fe³⁺-O^2--Fe³⁺ superexchange paths broken by oxygen vacancies then resulting in the Fe³⁺-Fe³⁺ ferromagnetism configuration. Meanwhile, the oxygen vacancy is highly diluted then the ferromagnetism configuration is confined in a single super-cell, favoring a short-range magnetic ordering at room temperature. The concentration of oxygen vacancies was calculated to be 0.68% by magnetization measurement. Our results may shed a light on how oxygen vacancies affect magnetism.