Electrical Conduction and Disorder in the Pyrochlore System (Gd1−xCax)2Sn2O7

Electrical conductivity measurements were made on the pyrochlore compounds (Gd₁–_xCa_x)₂Sn₂O₇ (x =0, 0.0036, 0.0057, 0.03) as a function of temperature, oxygen partial pressure and Ca doping concentration. An effective Frenkel constant and oxygen vacancy mobility were derived. Intrinsic anion disorder was found to be lower than the expected value based on the relative radii of the cations in the A and B sites (A₂B₂O₇). Low oxygen vacancy mobilities as well as low anion disorder resulted in considerably lower ionic conductivities in Gd_sSn₂O₇ relative to the previously studied Gd₂(Ti₁–_xZr_x)₂O₇ system. The temperature and composition dependence of the p-type electronic conductivity were evaluated and the oxidation enthalpy was derived.     

PREPARATION OF BONE TUMOR THERAPEUTIC RADIOPHARMACEUTICALS ^153 Sm—EDTMP

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非均匀软岩蠕变机理分析

为了对工程围岩的蠕变现象进行解释,探明软岩的蠕变本质,根据岩石压缩过程中变形、弱化本构关系以及变形与承载能力的关系,采用岩石最弱断面并联微元体模型,对非均匀软岩的衰减蠕变和非衰减蠕变机理进行了分析,研究表明,非均匀性岩石内部各点承载能力不同使得变形后岩石内部各点屈服弱化不同步,又由于岩石晶体内部空位或杂质的扩散,二者共同作用导致岩石蠕变．通过对截面积相同,高径比分别为1．5和2．5的页岩岩样进行蠕变试验,验证了岩石的非均匀性是造成岩石蠕变的一个不可忽视的重要因素．     

正电子湮没技术在研究合金形状记忆性能中的应用

本文用正电子湮没技术测试了Cu-Zn-Al形状记忆合金100℃母相时效过程中空位的变化。结果发现,随着时效时间的延长,空位浓度不断降低,空位尺寸不断增大。这一结果很好地解释了记忆合金马氏体逆转变温度As的变化规律,从而证明过饱和空位是Cu-Zn-Al形状记忆合金马氏体稳定化的一个主要原因。     

Synergistic effect of La and Co co-doping on room-temperature ferromagnetism enhancement of TiO2 nanoparticles

The synergistic influence of lanthanum and cobalt co-doping on room temperature ferromagnetism (RTFM) of TiO₂ system is investigated. A series of Ti_0.97?xCo_0.03La_xO₂ nanoparticles were prepared and their structures and properties were systematically studied with X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy, UV–vis spectrophotometer, Raman spectra and magnetic measurement techniques, respectively. Detailed experimental characterizations indicate that the as-prepared La and Co co-doped samples exhibit single anatase phase, and all the samples exhibit strong visible photoluminescence associated with oxygen vacancies and a clear ferromagnetic hysteresis loop, both of which were dramatically enhanced with La and Co co-doping, and the maximum saturation magnetization (M_s) reaches 1.38 emu/g at the La content of 6 mol%. It is speculated that oxygen vacancies modulated by ionic La play an important role in the enhanced RTFM, which can be attributed to the bound magnetic polarons (BMPs) formed via ferromagnetic coupling between two neighboring Co²⁺ ions mediated by oxygen vacancy (F⁺ center). Our results present an alternative method to obtain high performance RTFM.     

Double polarization hysteresis and dramatic influence of small compositional variations on the electrical properties in Bi4Ti3O12 ceramics

This work reports the existence of double polarization hysteresis (P–E) loop in Aurivillius-phase ferroelectric Bi₄Ti₃O₁₂ (BiT) and reveals dramatic influence of small compositional variations on the electrical properties of it. The double polarization hysteresis is a characteristic of the interaction of defects with domain walls. This characteristic becomes more pronounced in Bi-deficient and Mg-doped BiT due to an increase in oxygen vacancy concentration at the lattices. Normal and saturated P–E loop is recalled by Nb donor doping, and associated composition Bi₄Ti_2.97Nb_0.03O_12.015 (BiT-0.03Nb) shows high remnant polarization (P_r = 12.5 μC/cm²) and large field-induced strain (S₃₃ = 5.6 × 10^?4). In addition, this doping results in bulk conductivity (σ_b) of BiT decreasing dramatically and associated activity energy (E_a) increasing significantly. In contrast, high oxide ion conductivity is induced with Mg²⁺ acceptor doping, and at 600 °C the optimum composition has ionic conductivity of ?0.65 × 10^?2 S cm^?1 in the bulk.     

Enhanced piezoelectric properties and temperature stability of Bi4Ti3O12-based Aurivillius ceramics via W/Nb substitution

Bi₄Ti₃O₁₂ (BIT), a typical Aurivillius ceramics with high Curie temperature (T_c ? 675 °C), has great potential for high temperature applications. This work provides an effective method of inducing structure distortion, relieving the tetragonal strain of the TiO₆ octahedron and decreasing the concentration of oxygen vacancies to improve the piezoelectricity and temperature stability of BIT ceramics. Bi₄Ti_2.98W_0.01Nb_0.01O₁₂ possesses an optimum piezoelectric coefficient (d₃₃) of 32 pC/N, a high T_c of 655 °C and a large resistivity of 3 × 10⁶ Ω·cm at 500 °C. The maximum d₃₃ reported here is approximately quadruple than that of pure BIT (?7 pC/N). Moreover, the d₃₃ of W/Nb co-doped BIT and the in-situ temperature stability of the compression-mode sensor present a highly stable characteristic in the range of 25–600 °C. These results imply that W/Nb-modified BIT ceramics is a promising candidate for application at high temperatures of up to 600 °C.     

Origin of the temperature stability of dielectric constant in CaCu3Ti4O12

The temperature and dc bias stability of the dielectric constant and loss tangent of CaCu₃Ti₄O₁₂ samples sintered under different oxygen atmospheres are discussed. The results suggest that the metal-oxygen vacancy related defects not only provide the charge carriers for the conduction (defect doping) but also contribute to the huge permittivity in the way of defect dipoles repositioning under charge carrier hopping. The charge localization in a specific copper-oxygen vacancy defect complex is the reason of the huge and stable permittivity and low dielectric loss in the middle temperature range, 90 K-200 K (20 Hz), while the implementation of the large barrier layer height needs a contribution by the titanium oxygen vacancy related trap charges in the grain boundaries, which also lead to a second permittivity stable range in a higher temperature range 200 K–300 K.     

Local Electronic Structure Modulation Enables Fast-Charging Capability for Li-Rich Mn-Based Oxides Cathodes With Reversible Anionic Redox Activity

Anionic and cationic redox chemistries boost ultrahigh specific capacities of Li-rich Mn-based oxides cathodes (LRMO). However, irreversible oxygen evolution and sluggish kinetics result in continuous capacity decay and poor rate performance, restricting the commercial fast-charging cathodes application for lithium ion batteries. Herein, the local electronic structure of LRMO is appropriately modulated to alleviate oxygen release, enhance anionic redox reversibility, and facilitate Li⁺ diffusion via facile surface defect engineering. Concretely, oxygen vacancies integrated on the surface of LRMO reduce the density of states of O 2p band and trigger much delocalized electrons to distribute around the transition metal, resulting in less oxygen release, enhancing reversible anionic redox and the MnO₆ octahedral distortion. Besides, partially reduced Mn and lattice vacancies synchronously stimulate the electrochemical activity and boost the electronic conductivity, Li⁺ diffusion rate, and fast charge transfer. Therefore, the modified LRMO exhibits enhanced cyclic stability and fast-charging capability: a high discharging capacity of 212.6 mAh·g⁻¹ with 86.98% capacity retention after 100 cycles at 1 C is obtained and to charge to its 80%, SOC is shortened to 9.4 min at 5 C charging rate. This work will draw attention to boosting the fast-charging capability of LRMO via the local electronic structure modulation.     

Polymerization of styrene with a simple rare earth metal initiator

The catalytic activity in the polymerization of styrene has been examined using commercially available simple rare earth metal compounds such as Sm(OiPr)₃, Sm(acac)₃, Sm(OCOMe)₃, SmI₂(THF)₂ or SmCl₃ coupled with Et₃Al or methylaluminoxane (MAO). Among these compounds, the Sm(OiPr)₃/AlEt₃ system shows the highest catalytic activity, especially in the presence of a minor amount of toluene at 60 °C. The random copolymerization of styrene with methyl methacrylate suggests that the present polymerization proceeds with a radical polymerization mechanism. (C₅Me₅)SmCl₃Na(THF) and (C₅Me₅)SmCl₃Li(THF) systems exhibit relatively low catalytic activity, even in the presence of AlEt₃. © 2001 Society of Chemical Industry