首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   13658篇
  免费   1194篇
  国内免费   441篇
电工技术   273篇
综合类   654篇
化学工业   6265篇
金属工艺   457篇
机械仪表   166篇
建筑科学   476篇
矿业工程   319篇
能源动力   1105篇
轻工业   1356篇
水利工程   32篇
石油天然气   1030篇
武器工业   26篇
无线电   384篇
一般工业技术   1793篇
冶金工业   594篇
原子能技术   223篇
自动化技术   140篇
  2024年   49篇
  2023年   193篇
  2022年   312篇
  2021年   407篇
  2020年   429篇
  2019年   349篇
  2018年   359篇
  2017年   386篇
  2016年   404篇
  2015年   434篇
  2014年   749篇
  2013年   906篇
  2012年   898篇
  2011年   1173篇
  2010年   848篇
  2009年   872篇
  2008年   707篇
  2007年   868篇
  2006年   821篇
  2005年   651篇
  2004年   603篇
  2003年   534篇
  2002年   396篇
  2001年   313篇
  2000年   265篇
  1999年   229篇
  1998年   214篇
  1997年   156篇
  1996年   153篇
  1995年   102篇
  1994年   92篇
  1993年   67篇
  1992年   59篇
  1991年   49篇
  1990年   38篇
  1989年   29篇
  1988年   22篇
  1987年   25篇
  1986年   19篇
  1985年   20篇
  1984年   20篇
  1983年   13篇
  1982年   11篇
  1981年   12篇
  1980年   10篇
  1976年   3篇
  1975年   2篇
  1973年   1篇
  1959年   4篇
  1951年   14篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
91.
In this paper we present the results of XPS study of the surface chemistry of L-CVD SnO2 thin films onto Si(100) before and after subsequent additional oxidation. Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exhibit evident nonstoichiometry with the relative concentration [O]/[Sn] equal to 1.29 ± 0.1. After in situ oxidation at high temperature (800 K) the relative concentration [O]/[Sn] increases to 1.95 ± 0.05 which corresponds to the almost stoichiometric SnO2. Almost the same relative concentration [O]/[Sn] of L-CVD SnO2 thin films has been obtained after long term exposure to air. The oxidation states of L-CVD SnO2 thin films in both cases were confirmed by the shape analysis of corresponding XPS O1s and Sn3d5/2 peaks using the decomposition procedure. For the as-deposited L-CVD SnO2 thin films a mixture of SnO and SnO2 was observed, while for the oxidized L-CVD SnO2 thin films the domination of SnO2 was determined.  相似文献   
92.
An ejector expansion transcritical CO2 refrigeration cycle is proposed to improve the COP of the basic transcritical CO2 cycle by reducing the expansion process losses. A constant pressure mixing model for the ejector was established to perform the thermodynamic analysis of the ejector expansion transcritical CO2 cycle. The effect of the entrainment ratio and the pressure drop in the receiving section of the ejector on the relative performance of the ejector expansion transcritical CO2 cycle was investigated for typical air conditioning operation conditions. The effect of different operating conditions on the relative performance of the ejector expansion transcritical CO2 cycle was also investigated using assumed values for the entrainment ratio and pressure drop in the receiving section of the ejector. It was found that the COP of the ejector expansion transcritical CO2 cycle can be improved by more than 16% over the basic transcritical CO2 cycle for typical air conditioning operation conditions.  相似文献   
93.
CO2用于自然复叠制冷系统的理论分析   总被引:4,自引:0,他引:4  
对采用CO2和烷烃(R290、R600a、R600)组成的混合工质的自然复叠制冷系统应用于普冷领域进行了理论分析。研究了在CO2作为低沸点工质时,高沸点工质和中沸点工质对系统压比和性能系数COP的影响,以及这些性能参数随系统中CO2摩尔含量的变化情况。  相似文献   
94.
95.
The performance of transcritical R744 systems with direct expansion (DX) can be significantly improved by implementing a Flash Gas Bypass (FGB). The idea behind the concept is to bypass refrigerant vapor, created during the isenthalpic expansion process, around the evaporator. By feeding the evaporator with liquid refrigerant, pressure drop is reduced and refrigerant distribution is improved. With R744 as the working fluid, increased refrigerant-side heat transfer coefficients are expected as well. In addition, the FGB concept proves to be beneficial in terms of system design, in particular for combined air-conditioning and heat pumping applications. An experimental comparison to a conventional DX-system reveals that FGB increases the cooling capacity and COP at the same time by up to 9 and 7%, respectively. Even larger improvements are possible in case a variable speed compressor is utilized to match the performance of the conventional DX-system. A simulation model helps to separate the individual improvement mechanisms. It was found that the reduction of refrigerant-side pressure drop is the dominant improvement mechanism of FGB.  相似文献   
96.
金斌 《钛工业进展》2004,21(4):45-47
讨论了水洗真空度对水洗工艺的影响,提出水洗真空系统的改造原则,并对真空系统改造设计思路和方案进行了详细的探讨。通过改进和优化能够提高设备的使用率,最终达到缩短水洗时间,提高本工序产能的目的。  相似文献   
97.
CeO2 and Ce/V mixed oxide thin films prepared by sol-gel deposition and annealed in an air or argon atmosphere have been studied by chronocoulometry and by XAFS (X-ray absorption fine structure). Multielectron photoexcitations (MPE), well known to pervade XAFS spectra of Ce making the analysis of structural parameters unreliable, are removed with the help of the atomic absorption background, determined on simple Ce compounds. Distinct MPE estimates for Ce3+ and Ce4+ ions are used. In the analysis of the recovered pure XAFS signal, the degree of disorder is found to depend on the Ce/V molar ratio and on the heating atmosphere. The disorder correlates with charge capacity of films, both increasing with vanadium content and V4+/V5+ molar ratio.  相似文献   
98.
二氧化氯杀藻特性研究   总被引:10,自引:0,他引:10  
富营养化造成藻类大量繁殖 ,给饮用水生产带来诸多危害 .以ClO2 作为杀藻剂 ,对其杀藻效能及杀藻后水样的致突变性进行了系统研究 ,并对其杀藻机理进行了探讨 .结果表明 :①在同一投药速度下 ,随反应时间延长 ,叶绿素a(Chla)去除率随之提高 ,但提高的幅度随投药速度提高而趋于缓慢 ;同一反应时间下 ,随ClO2 投加速度的提高 ,叶绿素a(Chla)去除率显著升高 ,当反应时间小于 1 0min时 ,去除率随投药量增加而提高的幅度更为明显 .当ClO2 投加量为 38~ 85mgClO2 /mgChla时 ,叶绿素a(Chla)去除率可以达到 4 5 %~ 89.30 %.②ClO2 杀藻不会增加水样中有机浓集物的致突变性 .③藻类细胞的细胞壁结构与叶绿素a(Chla)的去除率有很大关系 ;ClO2 首先穿透细胞壁、细胞膜 ,进入细胞内部 ,在没有破坏藻细胞外部结构的情况下 ,将藻细胞中的叶绿素氧化 .  相似文献   
99.
The advanced plasma electrochemical process of anodic spark deposition (ASD) was used to generate photoactive titanium dioxide films on titanium metal substrates. A shift to easier-to-machine substrates was demonstrated by the deposition of a titanium film with physical vapour deposition onto different materials such as glass, silicon, and stainless steel prior to ASD. Obtained films were characterised by scanning electron microscopy, surface area measurement (Brunnauer-Emmett-Teller method, BET), X-ray diffraction, electron-probe microanalysis, and glow discharge spectroscopy. Additionally, film thickness was determined by eddy current measurements. Standard ASD conditions were defined as 180 V applied voltage over a 180 s hold time, a voltage ramp of 20 V/s, a duty cycle of 0.5 and a frequency of 1500 Hz. Most prominent characteristics of the titanium films produced under these standard conditions are a film thickness of ≤80 μm, a surface area of approximately 51 m2/g (BET) and an anatase content of approximately 30% and rutile content of approximately 70%. Furthermore, the film formation process is elucidated and the dependence of film thickness on deposition time and the dependence of the anatase and rutile content on the deposited mass are shown for varying ASD conditions.  相似文献   
100.
结合实例说明,搞好清洁生产对氯化法钛白企业治理环境污染,提高企业的经济效益和今后长远发展起着举足轻重的作用和重要的指导意义.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号