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61.
The dielectric behavior of sol-gel derived Ba0.80Sr0.20(ZrxTi1−x)O3 (0.0 ≤ x ≤ 0.50) thin films is studied. A relaxor behavior is observed for x ≥ 0.35. The degree of relaxation increases with Zr content. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (Tf). Below Tf, a long range polarization ordering is likely to take place. The plausible mechanism of the relaxor behavior of BSZT thin films with Zr contents ≥ 0.35 has been proposed based on the measured temperature as well as frequency dependent dielectric data. The solid solution system is visualized as a mixture of Ti+ 4 rich polar regions and Zr+ 4 rich regions; with the increase in Zr content the volume fraction of the polar regions is progressively reduced. At and above 35.0 at.% Zr substitution the polar regions exhibit typical relaxor behavior. 相似文献
62.
63.
Tooru Tanaka Toshiyuki Yamaguchi Akihiro Wakahara Akira Yoshida Ryoichi Taniguchi Yatsuka Matsuda Masatoshi Fujishiro 《Solar Energy Materials & Solar Cells》2003,75(1-2):115-120
Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe2 thin films have been investigated. The n-type CuInSe2 films in which the carrier concentration was about 3×1016 cm−3, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×1016 e cm−2. As the electron fluence exceeded 1017 e cm−2, both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm−1, which is slightly lower than that of III–V compound materials. 相似文献
64.
The selenisation of the thin film precursors indium, Cu-In and Cu-In-Ga has been studied by in-situ X-ray diffraction. The influence of sodium doping on the kinetics of the solid-state reactions observed agrees with the predictions derived from a phenomenological model presented earlier. In this model a layer of sodium polyselenide is assumed to form at the surface of the precursor, or around each crystal grain. This layer might be responsible for impeded ion exchange in certain solid-state reactions. 相似文献
65.
We have investigated synthesis conditions and some properties of sprayed Cu2ZnSnS4 (CZTS) thin films in order to determine the best preparation conditions for the realization of CZTS based photovoltaic solar cells. The thin films are made by means of spraying of aqueous solutions containing copper chloride, zinc chloride, tin chloride and thiourea on heated glass substrates at various temperatures. In order to optimize the synthesis conditions of the CZTS films, two series of experiments are performed. In the first series the sprayed duration was fixed at 30 min and in the second it is fixed at 60 min. In each series, the substrate temperature was changed from 553°K to 633°K. The X-ray diffraction shows, on one hand, that the best crystallinity was obtained for 613°K as substrate temperature and 60 min as sprayed duration. On the other hand, these CZTS films exhibit the kesterite structure with preferential orientation along the [112] direction. Atomical Force Microscopy was used to determine the grain sizes and the roughness of these CZTS thin film. After the annealing treatment, we estimated the optical band-gap energy of the CZTS thin film exhibiting the best crystallinity as 1.5 eV which is quite close to the optimum value for a solar cell. 相似文献
66.
Facile synthesis of ordered nanocrystalline alumina thin films with tunable mesopore structures 总被引:1,自引:0,他引:1
Lijuan Wan Honggang Fu Keying Shi Xiqiang Tian 《Microporous and mesoporous materials》2008,115(3):301-307
Mesoporous alumina layers have attracted attention for their potential use in ultrafiltration of salts, as a heterogeneous catalyst support, an adsorbent in environmental cleanup, and in petroleum refinement. The ability to control the fast hydrolysis rate of the inorganic precursors using simple and inexpensive routes is important for that potential to be realized. Herein, we introduce a novel and facile route to synthesize mesoporous alumina thin films from the combination of inexpensive and commercially available copolymer with aluminum chloride or nitrate (salts) in an EtOH–surfactant–NH3 · H2O–salts (EsNs) system through the evaporation-induced self-assembly (EISA) method. Mesoporous alumina layers obtained utilizing the EsNs system have ordered and tunable pore structures. The ability to easily control the mesophases of the alumina layers within a short time provides distinct advantages over previously reported synthesis procedures. Most importantly, we demonstrate that the binding of surfactant and NH3 · H2O for the formation of hydrogen bond between them in the EsNs system controls the fast hydrolysis rate of the inorganic species. This allows for the synthesis of nanocrystalline alumina layers via the aluminum oxo-clusters’ assembly with the surfactant. Such simple route may be applied in the synthesis of other non-silica mesostructured oxides. 相似文献
67.
68.
Shi-Woo Rhee 《Korean Journal of Chemical Engineering》1995,12(1):1-11
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition
process for Al has been actively investigated for the application in ultra large scale integration. In this review, various
precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in Al CVI) are described.
Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, plasma and photochemical
reactions are also briefly described. 相似文献
69.
Deposition of zinc oxide films from aqueous solutions containing complex Zn2+ ions on soda-lime substrates were studied by two-stage chemical deposition (TSCD) process. It was shown that the film thickness can be controlled by the number of dipping stages. Nano-layers were produced with less than nine times dipping stages. Greater dipping numbers resulted in film thickness exceeding 100 nm. The growth rate obeyed double-stage zeroth order with respect to the concentration and first order with respect to the temperature. This rate was proportional to the difference between the temperature of the hot water and the substrate. Overall activation energy of 17.20 ± 0.42 kJ mol−1 and frequency factor of 2.81 ± 0.07 μm s−1 was determined for ZnO deposition. These values were attributed to two resistances. One resistance corresponded with film heat transfer mechanism. The other was attributed to species attachment to the solid substrate. A modification to the diffuse-interface kinetic model was devised for explanation of the latter. EDAX (electron dispersive elemental analysis), XRD (X-ray diffraction) and SEM (scanning electron microscopy) were used to characterize the layer formed. These methods showed that the product consisted solely of pure elliptical ZnO grains. 相似文献
70.
We have made a study of the chemical composition, the electrical, the optical and the structural properties of polycrystalline CuInS2 thin films prepared by spray pyrolysis to be used for thin film solar cells. These films were deposited starting from aqueous solutions with different chemical compositions ([Cu]/[In] and [S]/[Cu] ratios) and at different substrate temperatures. In all cases, the material is p-type with grains preferentially oriented in the (112) direction of the sphalerite structure. The electro-optical properties show a very strong dependence on the [Cu]/[In] ratio in the solution. Films with copper excess have smaller resistivity and better crystallinity than those which are stoichiometric or have indium excess. The results obtained in this work show the possibility of having CuInS2 thin films with a wide range of resistivity, a fact that could be important for making solar cells based on this material. 相似文献