Fabrication of carbon nanotube arrays for field emission and sensor devices by nanoimprint lithography

This work brings forth the idea of incorporating insulation in the resist used for ultraviolet (UV) curing nanoimprint lithography (NIL). Carbon nanotubes (CNTs) are grown in the space between two insulated resist patterns on the conductive substrate to make CNTs arrays. Two imprinting processes, soft UV curing NIL with DRPPR process and novel NIL without cured residual resist, are presented to achieve the insulation patterns. First the fabricating process is performed using a polydimethylsiloxane (PDMS) stamp. Subsequently, inductively coupled plasma (ICP) is essential to wipe off the residual resist film. To avoid the ICP process, a novel UV curing NIL is presented. Its special hard quartz stamp with chrome shelter can protect the residual resist film out of curing during the UV exposure process, and the uncured resist can be easily removed by ultrasonic vibration in organic solutions. The CNT arrays are prepared on the patterned substrates by the pyrolysis of iron phthalocyanine (FePc). Field emission experiments reveal that the turn-on field of those CNTs arrays is low to 1.3 V/um.     

GaN基MSM结构紫外探测器光响应特性

在求解一维电流连续性方程和传输方程的同时考虑表面态陷阱的作用,获得了GaN基MSM结构紫外探测器在稳态光照下的电流随电压变化的解析解,从而导出了其光响应特性主要参数,并解释了电流和响应度随偏压变化的原因和光增益现象.将该模型应用于具体器件,实验测得饱和临界偏压约6 V,稳态电流6×10-8A,响应率0.085 7 A/W,与理论计算较吻合.     

多量子势垒电子阻挡层对UV LED 性能的影响

研究了不同厚度的多量子势垒电子阻挡层(MQB-EBLs)对InGaN UV LED的效率的影响。分析了影响不同厚度MQB-EBLs的LED光输出功率(LOP)的主要因素。实验表明,MQB-EBLs的量子阱层和势垒层厚度为分别为2 nm和3 nm时,387 nm UV LED的LOP可显著地提升到8.47 mW。     

UV‐Triggered Polydopamine Secondary Modification: Fast Deposition and Removal of Metal Nanoparticles

Since the first report in 2007, polydopamine (PDA) coating has shown great potential as a general and versatile method to create functional nanocoatings on arbitrary substrates. Slow kinetics and poor controllability of the coating and secondary modification processes, however, have limited the further development of this attractive method. In this work, it is demonstrated that UV irradiation at 365 nm significantly accelerates the process of secondary modification of a PDA‐coated surface. The kinetics of both thiol and amine modifications of PDA are increased 12‐fold via UV irradiation, while the kinetics of metal ion reduction at the PDA interface is increased more than 550 times. Moreover, it is demonstrated that irradiating a PDA/metal nanoparticle composite surface with UV light at 254 nm leads to dissolution of the deposited metal nanoparticles (MNPs). Finally, grayscale metallic patterns, dynamic deposition, and removal of MNPs on PDA surface are realized with the proposed method.     

紫外光照下ZnO基薄膜的光电和气敏特性研究

用sol-gel法制备ZnO及掺杂Al3+的ZnO半导体薄膜,利用XRD和AFM对薄膜结构和形貌进行表征。测量了不同掺Al量的薄膜在紫外光照射下电阻的变化,发现随着掺Al量的增大,薄膜在紫外光(波长为365nm)照射后其电阻先减小后增大。在室温下,对薄膜在不同浓度的CO气体下的敏感特性进行了研究,随着气体浓度的增加,薄膜电阻值逐渐减小;随着掺Al量的增大,气敏灵敏性先逐渐增大后减小,发现当铝含量为r(Al:ZnO)=0.5%时,对CO气体的灵敏度最大,并对紫外光照射下气敏半导体薄膜的气敏机理进行了简单分析。     

A novel monolithic ultraviolet image sensor based on a standard CMOS process

We present a monolithic ultraviolet(UV) image sensor based on a standard CMOS process.A compact UV sensitive device structure is designed as a pixel for the image sensor.This UV image sensor consists of a CMOS pixel array,high-voltage switches,a readout circuit and a digital control circuit.A 16×16 image sensor prototype chip is implemented in a 0.18μm standard CMOS logic process.The pixel and image sensor were measured. Experimental results demonstrate that the image sensor has a high sensitivity of 0.072 V/(mJ/cm~2) and can capture a UV image.It is suitable for large-scale monolithic bio-medical and space applications.     

X射线二极管平响应滤片的制作

针对X射线二极管平响应滤片的设计要求,采用电子束蒸发生长薄金层、紫外光曝光光刻、微电镀厚金层、体硅腐蚀制作镂空结构和等离子体刻蚀去掉PI等技术,成功制备了阵列结构的圆孔直径为5μm,周期为10.854μm,金层厚度分别为50,400nm的薄、厚两种金层滤片。电镀过程中采用台阶仪多次测量图形四周电镀厚度后取均值的方法得到尽可能准确的电镀厚金层。滤片交付实验后,在X光能量0.1～4keV取得的平响应曲线标准偏差与均值之比在13%以内,可以满足相关单位的具体物理研究实验要求。     

Development of a large area plate-to-plate type UV imprinting tool

A UV imprint lithography tool has been developed for micro/nano-scale patterning in an extremely large area, i.e., ∼300 × 400 mm². To achieve high pattern fidelity, residual-layer thickness uniformity, and an air bubble-free layer in a large area, the UV imprint tool has several main components including a silicon rubber uniform pressurizer, a large area UV-LED module, a vacuum pump, a chuck module, etc. Contact and structural analyses have been performed using commercial FEM packages such as LS-DYNA and ANSYS. The developed tool has been tested, and its performance indices including pattern fidelity and residual-layer thickness uniformity have been measured to be ∼97% and ∼90%, respectively.     

基于NS2的非视距紫外通信模型的建立与仿真研究

紫外光通信由于可以实现非视距通信方式,全天候全方位工作、抗干扰能力强等特点而逐步变为当前无线光网络的一个研究热点。分析了紫外光非视距通信方式的节点覆盖范围、链路模型以及传输容量;构建了紫外光非视距通信模型,包括传输模型和多收发器节点模型,添加了支持紫外非视距通信的定向静态路由协议;利用建立的模型对紫外光非视距通信的各种...     

基于UV光照的圆片直接键合技术

研究了UV辅助活化与湿化学清洗活化相结合的圆片直接键合技术,并利用红外测试系统、单轴拉伸测试仪和场发射扫描电子显微镜,结合恒温恒湿实验、高低温循环实验对键合质量进行了测试.结果表明,采用该技术可以实现较好的圆片直接键合,提高键合强度,控制合适的UV光照时间可以获得更高的强度,对键合硅片进行恒温恒湿和高低温交变循环处理后,硅片仍能保持较高的键合强度.因此,该工艺对于改进圆片直接键合技术是行之有效的,具有很大的应用潜力.