GZO厚度对非晶硅电池中复合背电极的影响

在非晶硅太阳能电池中加入复合背电极是提高非晶硅太阳能电池光电转换效率和稳定性的有效手段.本文利用磁控溅射技术在非晶硅薄膜太阳能电池上制备了ZnO :Ga(GZO)/Al复合背电极,研究了GZO厚度对GZO薄膜光电性质及非晶硅电池中GZO/Al复合背电极性能的影响.研究表明：随着GZO层厚度的增加,GZO薄膜的光电性质均表现出较高水平,适合制备GZO/Al复合背电极;相较于单层Al背电极的非晶硅太阳能电池,具有GZO/Al复合背电极的太阳能电池性能大幅提高.当GZO层厚度为100 nm时,太阳能电池的短路电流(I_SC)、开路电压(V_OC)和填充因子(FF)分别达到8.66 mA,1.62 V和54.7%.     

Lithium doping and gate dielectric dependence study of solution‐processed zinc‐oxide thin‐film transistors

Abstract— The effects of lithium (Li) doping concentration and gate dielectrics on the performance of solution‐processed zinc‐oxide (ZnO) thin‐film transistors (TFTs) has been investigated. ZnO films with strong c‐axis orientation and lower background conductivity was obtained with 15 at.% of Li. Different crystallization behavior of ZnO was observed in the case of various dielectric surfaces. The 15‐at.% Li‐doped ZnO films (thickness ～20 nm) prepared on SiO² and SiN^x were found to be present in crystalline form, whereas the film prepared on aluminum titanium oxide (ATO) was found to be amorphous. A field‐effect mobility of 1.81 cm²/V‐sec and an Ion/Ioff ratio of 2 × 10⁶ were obtained for the 15‐at.% Li‐doped ZnO TFTs with a bilayer gate dielectric of SiO² and SiN^x. The comparison of dielectric studies showed that the performance of TFTs prepared on SiN^x and ATO are higher than that of the TFTs prepared on SiO².     

Fabrication of ultraviolet photoconductive sensor using a novel aluminium-doped zinc oxide nanorod-nanoflake network thin film prepared via ultrasonic-assisted sol-gel and immersion methods

Unique and novel thin films with aluminium (Al)-doped zinc oxide (ZnO) nanostructures consisting of nanorod-nanoflake networks were prepared for metal-semiconductor-metal (MSM)-type ultraviolet (UV) photoconductive sensor applications. These nanostructures were grown on a glass substrate coated with a seed layer using a combination of ultrasonic-assisted sol-gel and immersion methods. The synthesised ZnO nanorods had diameters varying from 10 to 40 nm. Very thin nanoflake structures were grown vertically and horizontally on top of the nanorod array. The thin film had good ZnO crystallinity with a root mean square roughness of approximately 13.59 nm. The photocurrent properties for the Al-doped ZnO nanorod-nanoflake thin films were more than 1.5 times greater than those of the seed layer when the sensor was illuminated with 365 nm UV light at a density of 5 mA/cm². The responsivity of the device was found to be dependent on the bias voltage. We found that similar photocurrent curves were produced over eight cycles, which indicated that the UV sensing capability of the fabricated sensor was highly reproducible. Our results provide a new approach for utilising the novel structure of Al-doped ZnO thin films with a nanorod-nanoflake network for UV sensor applications. To the best of our knowledge, UV photoconductive sensors using Al-doped ZnO thin films with a nanorod-nanoflake network have not yet been reported.     

Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

We report on a piezoelectric response investigation of AlGaN/GaN circular high electron mobility transistor (C-HEMT) based ring gate capacitor as a new stress sensor device to be potentially applied for dynamic high-pressure sensing. A ring gate capacitor of C-HEMT with an additional ZnO gate interfacial layer was used to measure the changes in the piezoelectric charge induced directly by the variation of piezoelectric polarization of both gate piezoelectric layers (AlGaN, ZnO) for harmonic loading at different excitation frequences. Our experimental results show that about 10 nm thick piezoelectric ZnO layer grown on ring gate/AlGaN interface of C-HEMT can yield almost a 60% increase in the piezoelectric detection sensitivity of the device due to its higher piezoelectric coefficient. A three-dimensional CoventorWare simulation is carried out to confirm the increase in the measured piezoelectric response of ZnO based ring gate capacitor of C-HEMT.     

Enhanced surface plasmon resonance detection of DNA hybridization based on ZnO nanorod arrays

We demonstrated an enhanced surface plasmon resonance detection incorporating ZnO nanorod arrays (NRAs) built on a thin gold film. ZnO NRAs were fabricated by wet chemical growth method and used for the detection of DNA hybridization. Experimental results exhibited that ZnO NRAs provided a notable sensitivity improvement by more than 3 times, which is attributed to an increase in the surface reaction area. The measured sensitivity enhancement matched well with the numerical analyses based on the effective medium theory. Our approach is intended to show the feasibility and extend the applicability of the ZnO-based SPR biosensor to diverse biomolecular binding events.     

ZnO hierarchical nanostructures grown at room temperature and their C2H5OH sensor applications

Highly crystalline ZnO hierarchical nanostructures were prepared at room temperature through the alkaline hydrolysis of zinc salt by the forced mixing of two immiscible solutions: Zn-nitrate aqueous solution and oleic-acid-dissolved n-hexane solution. The oleic acid acted as a surfactant in the room-temperature formation of well-defined ZnO hierarchical nanostructures, which subsequently demonstrated a sensitive and selective detection of C₂H₅OH. The responses of these hierarchical nanostructures to 10-100 ppm C₂H₅OH ranged from 15.7 to 177.7, which were 7-9 times higher than those of the agglomerated nanoparticles.     

Selective potentiometric determination of uric acid with uricase immobilized on ZnO nanowires

In this study, a potentiometric uric acid biosensor was fabricated by immobilization of uricase onto zinc oxide (ZnO) nanowires. Zinc oxide nanowires with 80-150 nm in diameter and 900 nm to 1.5 μm in lengths were grown on the surface of a gold coated flexible plastic substrate. Uricase was electrostatically immobilized on the surface of well aligned ZnO nanowires resulting in a sensitive, selective, stable and reproducible uric acid biosensor. The potentiometric response of the ZnO sensor vs Ag/AgCl reference electrode was found to be linear over a relatively wide logarithmic concentration range (1-650 μM) suitable for human blood serum. By applying a Nafion^® membrane on the sensor the linear range could be extended to 1-1000 μM at the expense of an increased response time from 6.25 s to less than 9 s. On the other hand the membrane increased the sensor durability considerably. The sensor response was unaffected by normal concentrations of common interferents such as ascorbic acid, glucose, and urea.     

Synthesis of quantum size ZnO crystals and their gas sensing properties for NO2

Quantum size ZnO crystals have been synthesized successfully by a room temperature sol-gel process. Oleic acid (OA) has been used as capping agent to control the particle size of ZnO. The crystal structure and size of the ZnO are characterized by the X-ray diffraction (XRD) and transmission electron microscope (TEM). The XRD results show the as-synthesized ZnO has hexagonal wurtzite structure and the average crystallite size is 5.7 nm which is little less than TEM result. It is testified by photoluminescence (PL) and Raman spectra that the quantum size ZnO keeps the crystal structure of the bulk ZnO and possesses more surface defects. The quantum size ZnO has the highest response of 280 to NO₂ and the highest selectivity of 31 and 49 corresponding to CO and CH₄ at operating temperature of 290 °C. The effect of calcination temperatures on sensing property and transient response of the ZnO sensor are also investigated.     

High sensitive and selective formaldehyde sensors based on nanoparticle-assembled ZnO micro-octahedrons synthesized by homogeneous precipitation method

Nanoparticle-assembled ZnO micro-octahedrons were synthesized by a facile homogeneous precipitation method. The ZnO micro-octahedrons are hexagonal wurtzite with high crystallinity. Abundant structure defects were confirmed on ZnO surface by photoluminescence. Gas sensors based on the ZnO micro-octahedrons exhibited high response, selectivity and stability to 1–1000 ppm formaldehyde at 400 °C. Especially, even 1 ppm formaldehyde could be detected with high response (S = 22.7). It is of interest to point out that formaldehyde could be easily distinguished from ethanol or acetaldehyde with a selectivity of about 3. The high formaldehyde response is mainly attributed to the synergistic effect of high contents of electron donor defects (Zn_i and V_O) and highly active oxygen species (O²⁻) on the ZnO surface.