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51.
The interfacial intermetallics between Cu and solder were studied for four Sn-Pb compositions at the annealing temperatures
of 125°C, 150°C, and 175°C for up to 30 days. The η-phase (Cu6Sn5) layer formed during reflow continues to grow during annealing. An additional layer of ɛ-phase (Cu3Sn) forms at the η/Cu interface after an incubation annealing time. The thickness results fit a power-law relationship against
time with average exponents 0.69 and 0.44 for the η phase and the ɛ phase, respectively. On prolonged annealing, the proportions
of the individual phases in the total layer reach a steady state. 相似文献
52.
利用磁控溅射法在玻璃衬底上淀积铝掺杂氧化锌(AZO)薄膜作为缓冲层,在其上制备了ZnO薄膜。重点研究了AZO薄膜作为缓冲层对玻璃衬底上ZnO薄膜特性的影响。扫描电子显微镜(SEM)图像和X射线衍射(XRD)图谱分析结果表明,玻璃衬底上加入厚度为1μm的AZO缓冲层后,提高了衬底材料和ZnO薄膜之间的晶格匹配程度,有助于增大ZnO薄膜晶粒尺寸,提高其(002)取向择优生长特性、薄膜结晶特性及晶格结构完整性。室温下的透射光谱结果表明玻璃/AZO和玻璃衬底上ZnO薄膜的透光特性没有显著不同。光致发光(PL)谱研究结果表明AZO缓冲层可以有效阻止衬底表面硅原子从ZnO薄膜中"俘获"氧原子,减少ZnO薄膜中的缺陷,改善ZnO薄膜的结晶质量。 相似文献
53.
对掺杂浓度为1017~1019cm-3的GaN:Si样品进行高精度X射线衍射和拉曼散射光谱的研究发现:随着Si掺杂浓度的增加,GaN晶粒尺寸逐渐减小,引发更多的螺位错和混合位错致使摇摆曲线的半高宽有所增加,同时薄膜中的剩余应力也逐渐减小。当掺杂浓度高于2.74×1018cm-3时,薄膜从压力状态转变为张力状态。 相似文献
54.
A series of ZnO-CdO thin films of different molar ratios of Zn and Cd have been deposited on glass substrate at substrate temperature ~ 360 ℃ by the spray pyrolysis technique at an ambient atmosphere. X-ray diffraction (XRD) studies confirmed the polycrystalline nature of the film and modulated crystal structures of wurtzite (ZnO) and cubic (CdO) are formed. The evaluated lattice parameters, and crystallite size are consistent with literature. Dislocation density and strain increased in the film as the grain sizes of ZnO and CdO are decreased. The band gap energy varies from 3.20 to 2.21 eV depending on the Zn/Cd ratios in the film. An incident photon intensity dependent I-V study confirmed that the films are highly photosensitive. Current increased with the increase of the intensity of the light beam. The optical conductivity and the optical constants, such as extinction coefficient, refractive index and complex dielectric constants are evaluated from transmittance and reflectance spectra of the films and these parameters are found to be sensitive to photon energy and displayed intermediate optical properties between ZnO and CdO, making it preferable for applications as the buffer and window layers in solar cells. 相似文献
55.
In Situ X‐Ray Diffraction Studies on Structural Changes of a P2 Layered Material during Electrochemical Desodiation/Sodiation 下载免费PDF全文
Young Hwa Jung Ane S. Christiansen Rune E. Johnsen Poul Norby Do Kyung Kim 《Advanced functional materials》2015,25(21):3227-3237
Sodium layered oxides with mixed transition metals have received significant attention as positive electrode candidates for sodium‐ion batteries because of their high reversible capacity. The phase transformations of layered compounds during electrochemical reactions are a pivotal feature for understanding the relationship between layered structures and electrochemical properties. A combination of in situ diffraction and ex situ X‐ray absorption spectroscopy reveals the phase transition mechanism for the ternary transition metal system (Fe–Mn–Co) with P2 stacking. In situ synchrotron X‐ray diffraction using a capillary‐based microbattery cell shows a structural change from P2 to O2 in P2–Na0.7Fe0.4Mn0.4Co0.2O2 at the voltage plateau above 4.1 V on desodiation. The P2 structure is restored upon subsequent sodiation. The lattice parameter c in the O2 structure decreases significantly, resulting in a volumetric contraction of the lattice toward a fully charged state. Observations on the redox behavior of each transition metal in P2–Na0.7Fe0.4Mn0.4Co0.2O2 using X‐ray absorption spectroscopy indicate that all transition metals are involved in the reduction/oxidation process. 相似文献
56.
Ke Meng Xiao Wang Qiaofei Xu Zhimin Li Zhou Liu Longlong Wu Youdi Hu Ning Liu Gang Chen 《Advanced functional materials》2019,29(35)
Metal halide perovskites have revolutionized the development of highly efficient, solution‐processable solar cells. Further advancements rely on improving perovskite film qualities through a better understanding of the underlying growth mechanism. Here, a systematic in situ grazing‐incidence X‐ray diffraction investigation is performed, facilitated by other techniques, on the sequential deposition of formamidinium lead iodide (FAPbI3)‐based perovskite films. The active chemical reaction, composition distribution, phase transition, and crystal grain orientation are all visualized following the entire perovskite formation process. Furthermore, the influences of additive ions on the crystallization speed, grain orientation, and morphology of FAPbI3‐based films, along with their photovoltaic performances, are fully evaluated and optimized, which leads to highly reproducible and efficient perovskite solar cells. The findings provide key insights into the perovskite growth mechanism and suggest the fabrication of high‐quality perovskite films for widespread optoelectronic applications. 相似文献
57.
58.
Cadmium selenide films were synthesized using simple electrodeposition method on indium tin oxide coated glass substrates. The synthesized films were post annealed at 200 °C, 300 °C and 400 °C. X-ray diffraction of the films showed the hexagonal structure with crystallite size <3 nm for as deposited films and 3–25 nm for annealed films. The surface morphology of films using field emission scanning electron microscopy showed granular surface. The high resolution transmission electron microscopy of a crystallite of the film revealed lattice fringes which measured lattice spacing of 3.13 Å corresponding to (002) plane, indicating the lattice contraction effect, due to small size of CdSe nanocrystallite. The calculation of optical band gap using UV–visible absorption spectrum showed strong red-shift with increase in crystallite size, indicating to the charge confinement in CdSe nanocrystallite. 相似文献
59.
60.
首次报道了利用相分凝技术在非晶石英衬底上立方ZnMgO基体中制备六方ZnO量子点的化学溶液方法.对所制备的ZnO/ZnMgO/SiO2进行了原子力显微镜(AFM)、X射线衍射(XRD)、光致发光(PL)、椭圆偏振光谱(SE)表征.XRD表征表明当六配位Zn2+以替位的形式取代六配位Mg2+时,会导致相同衍射条件下立方ZnMgO的2θ比立方MgO的2θ小.SE表征发现ZnO量子点的量子效应导致了ZnO量子点的激子吸收能(3.76eV)比ZnO体晶的能带隙(3.37 eV)大.AFM表征表明:导致薄膜的XRD的衍射峰、α吸收峰和PL发射峰皆很宽的部分原因是由于组成所制备薄膜的晶粒尺寸分散较大、形状不一引起的. 相似文献