掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

ZnO陶瓷材料的负阻特性

介绍了ＺｎＯ陶瓷的负阻特性，主要研究了ＭｎＯ２掺杂和Ｎｉ２Ｏ３掺杂对ＺｎＯ陶瓷负阻特性的影响。     

ZnO压敏陶瓷最佳掺杂含量的理论计算

从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到ZnO陶瓷材料。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系，给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系，进而得到了一个掺杂最佳含量的表达式。系统地分析了ZnO压敏陶瓷的掺杂改性的实验结果，应用此表达式定量计算了ZnO压敏陶瓷的最佳掺杂含量，定量计算的结果与实验数据相符合。该理论也适用于其他薄膜材料最佳掺杂含量的理论计算。     

Hydrothermal synthesis of hexagonal ZnO clusters

Hydrothermal process was applied to synthesize zinc oxide nanocrystals. X-ray powder diffraction and scanning electron microscopy were used to analyze the crystal structure and surface morphology. XRD pattern analysis showed that the ZnO clusters are single hexagonal phase of wurtzite structure (space group P63 mc) with no impurity of Zn and Zn(OH)₂. Also, SEM images revealed that the size of a single ZnO crystal is between 200-500 nm in diameter and 2-5 μm in length. The influence of potassium iodide (KI) as a surfactant on the crystallinity of ZnO has been investigated.     

Formation of mushroom-like ZnO microcrystals through a solution calcination process

Mushroom-like ZnO microcrystals have been prepared via a solution calcination route, using Zn(NO₃)₂ as Zn source in the absence of any surfactants, templates or catalysts. This is the first example to prepare mushroom-like crystals as semiconductors, which are expected to show particular physical properties. The ZnO products were investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectrum measurements. A suitable concentration of Zn(NO₃)₂ solution was important for the growth of the mushroom-like products. The reported synthetic procedure is straightforward and inexpensive, and thus can be readily adopted to produce large quantities of mushroom-like ZnO microcrystals.     

Non-linear current–voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals

SrTiO₃ and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO₃, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

UV法测定聚甲基丙烯酸酯纳米粒中胰岛素的包封率

建立一种简便易行的测定聚甲基丙烯酸酯胰岛素纳米粒中游离胰岛素含量方法.用Nanosep OD100C33超滤膜分离纳米粒和游离药物,在276 nm处测定药物的吸光度,建立胰岛素含量测定方法,并对线性、回收率、精密度等指标进行考察,最后测定各种胰岛素和载体比例混合的纳米粒的包封率.结果发现,该超滤膜能较好地分离纳米粒和游离的药物,在0.11～1.10 u/mL范围内,药物在276 nm的吸光度和浓度存在良好的线性关系(r=0.999 8),线性方程为A=0.868 8C-0.001 6,高、中、低3种浓度的回收率和精密度良好.该方法操作简单、结果可靠,可用于胰岛素纳米粒中药物包封率的测定.     

Surface structural change of ZnO-coated LiNi0.5Mn1.5O4 spinel as 5 V cathode materials at elevated temperatures

LiNi_0.5Mn_1.5O₄ powder was synthesized via sol-gel method and coated with ZnO in order to test the electrochemical cyclability of the material as a cathode for the secondary Li battery in the 5 V range at 55 °C. The ZnO-coated LiNi_0.5Mn_1.5O₄ powder nearly maintained its initial capacity of 137 mA h g⁻¹ after 50 cycles whereas the uncoated powder was able to retain no more than 10% of the initial capacity after 30 cycles. TEM analysis of the cycled cathodes suggests that the formation of the graphitic surface phase, hindering the Li migration, may be responsible for the rapid capacity loss of the uncoated material while no such phase was observed on the surface of the ZnO coated LiNi_0.5Mn_1.5O₄ powder.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.