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21.
张欣  许毓春 《压电与声光》1996,18(3):201-203
介绍了ZnO陶瓷的负阻特性,主要研究了MnO2掺杂和Ni2O3掺杂对ZnO陶瓷负阻特性的影响。  相似文献   
22.
ZnO压敏陶瓷最佳掺杂含量的理论计算   总被引:3,自引:0,他引:3  
范志新 《压电与声光》2002,24(3):244-246
从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到ZnO陶瓷材料。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系,给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系,进而得到了一个掺杂最佳含量的表达式。系统地分析了ZnO压敏陶瓷的掺杂改性的实验结果,应用此表达式定量计算了ZnO压敏陶瓷的最佳掺杂含量,定量计算的结果与实验数据相符合。该理论也适用于其他薄膜材料最佳掺杂含量的理论计算。  相似文献   
23.
Submicrometer-sized titania hollow spheres with tunable shell thickness and smooth surfaces have been successfully synthesized by employing sulfonated polystyrene (PS) latex particles as a template in sol-gel method. The structure of the particles was characterized by scanning electron microscopy and transmission electron microscopy. The shell thickness was readily tuned by altering the concentration of titanium tetrabutoxide (TBOT) in ethanol solutions. The surface roughness as well as the shell thickness has the tendency to increase with the increase in the concentration of TBOT. The diameter of the hollow spheres was on the average of 20-26% smaller than the diameter of template PS latex particles. Some titania fragments were also observed for the sample with the highest TBOT concentration.  相似文献   
24.
Mushroom-like ZnO microcrystals have been prepared via a solution calcination route, using Zn(NO3)2 as Zn source in the absence of any surfactants, templates or catalysts. This is the first example to prepare mushroom-like crystals as semiconductors, which are expected to show particular physical properties. The ZnO products were investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectrum measurements. A suitable concentration of Zn(NO3)2 solution was important for the growth of the mushroom-like products. The reported synthetic procedure is straightforward and inexpensive, and thus can be readily adopted to produce large quantities of mushroom-like ZnO microcrystals.  相似文献   
25.
The behavior of an ultrasonic shot peening process is observed and analyzed by using a model of inelastic hard spheres in a gravitational field that are fluidized by a vibrating bottom wall (sonotrode) in a cylindrical chamber. A marked heterogeneous distribution of impacts appears when the collision between the shot and the side wall becomes inelastic with constant dissipation. This effect is one order of magnitude larger than the simple heterogeneity arising from boundary collision on the cylinder. Variable restitution coefficients bring the simulation closer to the general observation and allow the investigation of peening regimes with changing shot density. We compute within this model other physical quantities (impact velocities, impact angle, temperature and density profile) that are influenced by the number N of spheres.  相似文献   
26.
We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH3 is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH3 pre-exposure helps form a Zn3N2 layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.  相似文献   
27.
LiNi0.5Mn1.5O4 powder was synthesized via sol-gel method and coated with ZnO in order to test the electrochemical cyclability of the material as a cathode for the secondary Li battery in the 5 V range at 55 °C. The ZnO-coated LiNi0.5Mn1.5O4 powder nearly maintained its initial capacity of 137 mA h g−1 after 50 cycles whereas the uncoated powder was able to retain no more than 10% of the initial capacity after 30 cycles. TEM analysis of the cycled cathodes suggests that the formation of the graphitic surface phase, hindering the Li migration, may be responsible for the rapid capacity loss of the uncoated material while no such phase was observed on the surface of the ZnO coated LiNi0.5Mn1.5O4 powder.  相似文献   
28.
We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO3(ZnO)m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 105. The field-effect mobility increased from ∼1 to ∼10 cm2 (V s)−1 as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.  相似文献   
29.
氧化锌压敏陶瓷烧结致密化过程的研究   总被引:6,自引:0,他引:6  
本文研究了氧化锌压敏陶瓷的致密化过程,结果发现只有当烧结温度升高到一定值时,试样中的ZnO粉粒产生聚集,致密化过程才开始.致密化是瓷体获得稳定电性能的基础.低熔点添加剂B2O3可以降低致密化的起始温度,而致密化过程中的等温烧结对ZnO压敏陶瓷的最大密度几乎没有影响.  相似文献   
30.
Non-aqueous electrodeposition of ZnO and CdO films   总被引:1,自引:0,他引:1  
R. Jayakrishnan  G. Hodes   《Thin solid films》2003,440(1-2):19-25
ZnO films were electrodeposited from a dimethylsulfoxide bath containing dissolved gaseous oxygen. Variations in deposition parameters and their effects on the structural (crystal size, growth direction), optical (bandgap variations, photoluminescence) and electrical (conductivity) properties are described. The technique was extended to give highly-conducting films of CdO.  相似文献   
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