High thermal annealing effect on structural and optical properties of ZnO–SiO2 nanocomposite

The effect of annealing temperature on photoluminescence (PL) of ZnO–SiO₂ nanocomposite was investigated. The ZnO–SiO₂ nanocomposite was annealed at different temperatures from 600 °C to 1000 °C with a step of 100 °C. High Resolution Transmission Electron Microscope (HR-TEM) pictures showed ZnO nanoparticles of 5 nm are capped with amorphous SiO₂ matrix. Field Emission Scanning Electron Microscope (FE-SEM) pictures showed that samples exhibit spherical morphology up to 800 °C and dumbbell morphology above 800 °C. The absorption spectrum of ZnO–SiO₂ nanocomposite suffers a blue-shift from 369 nm to 365 nm with increase of temperature from 800 °C to 1000 °C. The PL spectrum of ZnO–SiO₂ nanocomposite exhibited an UV emission positioned at 396 nm. The UV emission intensity increased as the temperature increased from 600 °C to 700 °C and then decreased for samples annealed at and above 800^°C. The XRD results showed that formation of willemite phase starts at 800 °C and pure willemite phase formed at 1000 °C. The decrease of the intensity of 396 nm emission peak at 900 °C and 1000 °C is due to the collapse of the ZnO hexagonal structure. This is due to the dominant diffusion of Zn into SiO₂ at these temperatures. At 1000 °C, an emission peak at 388 nm is observed in addition to UV emission of ZnO at 396 nm and is believed to be originated from the willemite.     

ZnO薄膜的制备及其光学性能

以柠檬酸为络合剂、采用无机盐溶胶 -凝胶法 ,在玻璃基片上用提拉法制备了多孔ZnO薄膜。利用红外光谱、DTA -TG、XRD、SEM、UV -VIS透射等分析测试 ,考察了溶胶 -凝胶制备特征、热处理过程和热处理温度下薄膜的成相、表面形貌以及光学性能。结果表明 4 0 0℃热处理 1h的ZnO薄膜已开始晶化 ,晶型是六方纤锌矿 ;6 0 0℃热处理 1h的薄膜表面为多孔结构 ,粒径和孔径均匀 ;在可见光范围 ,薄膜的光透射率超过 85 % ,在波长 380nm开始出现紫外吸收 ;从而为该材料制作染料敏化的太阳能电池阳极薄膜打下良好的基础。     

Oriented colloidal-crystal thin films of polystyrene spheres via spin coating

We developed a simple and inexpensive synthesis of a large-scale close-packed monolayer of polystyrene sphere arrays, which have a variety of applications. The influence of three step spin speeds, spinning time, solution quantity and relative humidity is studied in order to achieve a large area close-packed monolayer.A relatively high surface coverage and uniform monolayer of PS spheres in the range of 85%–90% are achieved by appropriate control of the preparative parameters. Also the effect of the oxygen plasma etching process on the reduction of PS spheres has been studied. We conclude that it can be useful in industrial applications, because of the fabrication speed, surface coverage, control over PS spheres and cost of the process.     

Li掺杂量对Li-N共掺ZnO薄膜光学性能的影响

本文利用溶胶-凝胶旋涂法在玻璃衬底上制备了 本征、N单掺和Li-N共掺的ZnO薄膜。 研究Li掺杂量的改变对薄膜的晶体结构、表面形貌、透过性能和发光性能的影响。采用了紫 外-可见分光光度计(UV-VIS)、光致发光谱(PL)、扫描电子显微镜(SEM)和X射线衍 射 仪(XRD)等表征手段对样品进行了测试。结果表明:Li掺杂量的改变对薄膜的结构和性能 都有一定的影响,随着Li掺杂量的增加,(002)衍射峰强度增大,晶 粒尺寸先增加后减小, 紫外发射峰的强度和薄膜的透过性能同样是先增强后减弱。当Li元素的原子比为6at%时, 薄膜的c轴择优取向明显,结晶性能最好,薄膜紫外发光最强,透过率最大。     

Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C. In-situ nitrogen compensation doping was performed using NH₃. Microstructural and optical properties of the films, as well as the N-doping effects, were studied. The metal-semiconductor-metal ultraviolet sensitive photodetectors were fabricated on N-doped epitaxial ZnO films. The detector showed fast photoresponse, with a rise time of 1 μs and a fall time of 1.5 μs. Low-frequency photoresponsivity, on the order of 400 A/W at 5 V bias, was obtained.     

利用光电子能谱研究氧化锌压敏电阻界面电输运特性

采用X射线光电子能谱(XPS)对比分析纯氧化锌陶瓷和氧化锌压敏电阻的界面特性。结果表明,纯氧化锌陶瓷晶粒平均尺寸小于10 祄,掺杂材料有利于ZnO晶粒均匀生长。界面上O/Zn原子数量比值等于2.58,但界面势垒不到10 mV,其体电阻率在2.36~47.97佟m。价电子谱发现:室温下仅纯ZnO费米能级附近有载流子分布,这表明:压敏电阻界面有陷阱态,氧化锌压敏电阻界面电输运特性需用载流子陷阱对双肖特基势垒进行补充。     

K+对ZnO压敏陶瓷电性能的影响

采用传统的陶瓷工艺,制备了ZnO压敏陶瓷。研究了K+掺杂量对ZnO压敏陶瓷电性能的影响。结果表明:当x(K+)小于40×10–6时,对其电性能几乎没有影响;但若x(K+)超过60×10–6后,由于K+在晶界和三角区的大量偏析,破坏了晶界层的稳定,导致其浪涌电流耐受能力严重劣化。     

Si衬底上ZnO外延膜结构性质的比较

采用连通式双反应室高温MOCVD系统在Si衬底上外延ZnO薄膜,通过卢瑟福背散射/沟道(RBS/C)及高分辨X射线衍射(HR-XRD)技术对不同衬底条件的ZnO外延膜进行了组分及结构分析,结果表明在采用SiC缓冲层后,Si(111)衬底上ZnO(0002)面衍射峰半高宽明显减小,缺陷密度降低,单晶质量显著变好,c轴方向应变由0.49%变为-0.16%,即由拉应变变为压应变且应变值变小,说明SiC缓冲层可以有效地减小ZnO与Si衬底晶格失配带来的应变,改善外延膜质量,实现Si衬底上单晶ZnO的生长.     

Thermal diffusion of lithium acceptors into ZnO crystals

Electron paramagnetic resonance (EPR) has been used to monitor the diffusion of lithium ions into single crystals of ZnO. The in-diffusion occurs when a crystal is embedded in LiF powder and then held in air at temperatures near 750°C for periods of time ranging up to 22 h. These added lithium ions occupy zinc sites and become singly ionized acceptors (because the material is initially n type). A corresponding reduction in the number of neutral shallow donors is observed with EPR. To monitor the lithium acceptors, we temporarily convert them to the EPR-active neutral acceptor state by exposure to laser light (325 nm or 442 nm) at low temperatures. Also, after each diffusion treatment, we monitor the EPR signal of singly ionized copper acceptors and the photo-induced EPR signal of neutral nitrogen acceptors. These nitrogen and copper impurities are initially present in the crystal, at trace levels, and are made observable by the thermal anneals. Infrared-absorption measurements at room temperature in the 2–10 μm region show that the concentration of free carriers decreases as lithium is added to the crystal. After 22 h at 750°C in the LiF powder, the free-carrier absorption is no longer present, and the crystal is semi-insulating.